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Fizika i Tekhnika Poluprovodnikov, 2012, Volume 46, Issue 12, Pages 1537–1541 (Mi phts8388)  

XVI Symposium "Nanophysics and Nanoelectronics", Nizhni Novgorod, March 12-16, 2012

Spin properties of trions in a dense quasi-2D electron gas

V. P. Kochereshkoab, L. Besombesc, R. T. Coxc, H. Mariettec, T. Wojtowiczd, G. Karczewskid, J. Kossutd

a Ioffe Institute, St. Petersburg
b Spin optics laboratory, Saint-Petersburg State University
c Institut NÉEL, CNRS and Université Joseph Fourier
d Institute of Physics, Polish Academy of Sciences
Abstract: The reflection and photoluminescence spectra of modulation-doped CdTe/CdMgTe quantum-well structures have been studied. It was found that the magnitude and sign of the Zeeman splitting of the trion reflection line depend on the electron concentration in the quantum well, whereas the magnitude and sign of the splitting of the exciton line are absolutely the same for all the electron concentrations under study. In the photoluminescence spectra, the magnitude and sign of the Zeeman splittings for the exciton and trion were the same. This “renormalization” of the trion $g$ factor is explained in terms of the model of combined exciton-electron processes.
Received: 15.04.2012
Accepted: 25.04.2012
English version:
Semiconductors, 2012, Volume 46, Issue 12, Pages 1502–1505
DOI: https://doi.org/10.1134/S1063782612120081
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. P. Kochereshko, L. Besombes, R. T. Cox, H. Mariette, T. Wojtowicz, G. Karczewski, J. Kossut, “Spin properties of trions in a dense quasi-2D electron gas”, Fizika i Tekhnika Poluprovodnikov, 46:12 (2012), 1537–1541; Semiconductors, 46:12 (2012), 1502–1505
Citation in format AMSBIB
\Bibitem{KocBesCox12}
\by V.~P.~Kochereshko, L.~Besombes, R.~T.~Cox, H.~Mariette, T.~Wojtowicz, G.~Karczewski, J.~Kossut
\paper Spin properties of trions in a dense quasi-2D electron gas
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2012
\vol 46
\issue 12
\pages 1537--1541
\mathnet{http://mi.mathnet.ru/phts8388}
\elib{https://elibrary.ru/item.asp?id=20319312}
\transl
\jour Semiconductors
\yr 2012
\vol 46
\issue 12
\pages 1502--1505
\crossref{https://doi.org/10.1134/S1063782612120081}
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