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Fizika i Tekhnika Poluprovodnikov, 2012, Volume 46, Issue 12, Pages 1561–1565 (Mi phts8392)  
This article is cited in 1 scientific paper (total in 1 paper)

XVI Symposium "Nanophysics and Nanoelectronics", Nizhni Novgorod, March 12-16, 2012

Admittance spectroscopy of ring diode InGaAs/InAlAs/InP quantum-well structures

S. V. Tikhova, N. V. Baidusb, A. A. Biryukovb, V. E. Degtyarova

a Lobachevsky State University of Nizhny Novgorod
b Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
Full-text PDF (321 kB) Citations (1)
Abstract: The admittance of ring planar diode Au/InGaAs/InP and Au/InGaAs/InAlAs heteronanostructures on $i$-InP has been studied. The structures are constituted by a silicon $\delta$-doped layer and an InGaAs quantum well (QW) in InP or InAlAs epitaxial layers. An analysis of the capacitance-voltage and conductance-voltage characteristics yielded distribution profiles of the electron concentration and mobility in the vicinity of the QW and $\delta$-doped layer. It is shown that lowering the temperature leads to an increase in the electron concentration and mobility in the QW.
Received: 15.04.2012
Accepted: 25.04.2012
English version:
Semiconductors, 2012, Volume 46, Issue 12, Pages 1524–1528
DOI: https://doi.org/10.1134/S1063782612120172
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. V. Tikhov, N. V. Baidus, A. A. Biryukov, V. E. Degtyarov, “Admittance spectroscopy of ring diode InGaAs/InAlAs/InP quantum-well structures”, Fizika i Tekhnika Poluprovodnikov, 46:12 (2012), 1561–1565; Semiconductors, 46:12 (2012), 1524–1528
Citation in format AMSBIB
\Bibitem{TikBaiBir12}
\by S.~V.~Tikhov, N.~V.~Baidus, A.~A.~Biryukov, V.~E.~Degtyarov
\paper Admittance spectroscopy of ring diode InGaAs/InAlAs/InP quantum-well structures
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2012
\vol 46
\issue 12
\pages 1561--1565
\mathnet{http://mi.mathnet.ru/phts8392}
\elib{https://elibrary.ru/item.asp?id=20319316}
\transl
\jour Semiconductors
\yr 2012
\vol 46
\issue 12
\pages 1524--1528
\crossref{https://doi.org/10.1134/S1063782612120172}
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    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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