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Publications in Math-Net.Ru |
Citations |
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2018 |
| 1. |
A. N. Tereshchenko, D. S. Korolev, A. N. Mikhaylov, A. I. Belov, A. A. Nikolskaya, D. A. Pavlov, D. I. Tetelbaum, E. A. Steinman, “Effect of boron impurity on the light-emitting properties of dislocation structures formed in silicon by Si$^{+}$ ion implantation”, Fizika i Tekhnika Poluprovodnikov, 52:7 (2018), 702–707   ; Semiconductors, 52:7 (2018), 843–848 |
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2016 |
| 2. |
S. K. Brantov, A. N. Tereshchenko, E. A. Steinman, E. B. Yakimov, “Physical properties of carbon films obtained by methane pyrolysis in an electric field”, Zhurnal Tekhnicheskoi Fiziki, 86:3 (2016), 110–113 ; Tech. Phys., 61:3 (2016), 428–431 |
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2015 |
| 3. |
O. V. Koplak, E. A. Steinman, A. N. Tereshchenko, R. B. Morgunov, “Effect of plastic deformation on the magnetic properties and dislocation luminescence of isotopically enriched silicon $^{29}$Si:B”, Fizika i Tekhnika Poluprovodnikov, 49:9 (2015), 1175–1179 ; Semiconductors, 49:9 (2015), 1140–1144 |
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2014 |
| 4. |
O. V. Koplak, A. I. Dmitriev, S. G. Vasil'ev, E. A. Steinman, S. I. Alekseev, R. B. Morgunov, “Deformation paramagnetic defects in Fz-$^{29}$Si:P crystals”, Fizika i Tekhnika Poluprovodnikov, 48:8 (2014), 1017–1023 ; Semiconductors, 48:8 (2014), 989–995 |
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2001 |
| 5. |
V. V. Kveder, E. A. Steinman, R. N. Lyubovskay, S. A. Omel'chenko, Yu. A. Osip'yan, “Magnetic properties of crystals of the molecular complex between fullerene C60 and an organic donor $9,9'$-trans-bis(telluraxanthenyl)”, Pis'ma v Zh. Èksper. Teoret. Fiz., 74:8 (2001), 462–465 ; JETP Letters, 74:8 (2001), 422–424  |
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1989 |
| 6. |
A. N. Izotov, A. I. Kolyubakin, S. A. Shevchenko, E. A. Steinman, “Discrete spectrum of nonequilibrium dislocation structure in germanium”, Dokl. Akad. Nauk SSSR, 305:5 (1989), 1104–1106 |
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1988 |
| 7. |
A. N. Izotov, E. A. Steinman, “Systematics of dislocation photoluminescence lines in silicon”, Fizika Tverdogo Tela, 30:10 (1988), 3177–3179 |
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1987 |
| 8. |
A. N. Izotov, E. A. Steinman, “Shear stress-induced rearrangement of dislocation optical centers”, Fizika Tverdogo Tela, 29:3 (1987), 879–881 |
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1986 |
| 9. |
A. N. Izotov, Yu. A. Osip'yan, E. A. Steinman, “Quenching effect on photoluminescence dislocation spectrum in silicon”, Fizika Tverdogo Tela, 28:4 (1986), 1172–1176 |
| 10. |
A. N. Izotov, E. A. Steinman, “Line polarization of dislocation luminescence in silicon $\mathrm{NaI}$”, Fizika Tverdogo Tela, 28:4 (1986), 1015–1019 |
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1984 |
| 11. |
Yu. A. Osip'yan, A. M. Rtishchev, E. A. Steinman, “Dislocation photoluminescence spectra at annealing of deformed silicon samples”, Fizika Tverdogo Tela, 26:6 (1984), 1772–1776 |
| 12. |
A. I. Kolyubakin, Yu. A. Osip'yan, S. A. Shevchenko, E. A. Steinman, “Dislocation luminescence in $\mathrm{Ge}$”, Fizika Tverdogo Tela, 26:3 (1984), 677–683 |
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