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Publications in Math-Net.Ru |
Citations |
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2018 |
| 1. |
A. P. Gorshkov, N. S. Volkova, D. A. Pavlov, Yu. V. Usov, L. A. Istomin, S. B. Levichev, “Relation between the electronic properties and structure of InAs/GaAs quantum dots grown by vapor-phase epitaxy”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1421–1424   ; Semiconductors, 52:12 (2018), 1525–1528 |
| 2. |
M. L. Orlov, N. S. Volkova, N. L. Ivina, L. K. Orlov, “Electric-field behavior of the resonance features of the tunneling photocurrent component in InAs(QD)/GaAs heterostructures”, Fizika i Tekhnika Poluprovodnikov, 52:9 (2018), 1006–1014 ; Semiconductors, 52:9 (2018), 1129–1136 |
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| 3. |
M. M. Ivanova, A. N. Kachemtsev, A. N. Mikhaylov, D. O. Filatov, A. P. Gorshkov, N. S. Volkova, V. Yu. Chalkov, V. G. Shengurov, “Effect of pulsed gamma-neutron irradiation on the photosensitivity of Si-based photodiodes with GeSi nanoislands and Ge epitaxial layers”, Fizika i Tekhnika Poluprovodnikov, 52:6 (2018), 651–655 ; Semiconductors, 52:6 (2018), 797–801 |
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2017 |
| 4. |
A. P. Gorshkov, N. S. Volkova, P. G. Voronin, A. V. Zdoroveyshchev, L. A. Istomin, D. A. Pavlov, Yu. V. Usov, S. B. Levichev, “Effect of the cap-layer composition on the electronic properties of InAs/GaAs quantum dots”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1447–1450 ; Semiconductors, 51:11 (2017), 1395–1398 |
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2015 |
| 5. |
N. S. Volkova, A. P. Gorshkov, A. V. Zdoroveyshchev, L. A. Istomin, S. B. Levichev, “Effect of the deposition of cobalt on the optoelectronic properties of quantum-confined In(Ga)As/GaAs heteronanostructures”, Fizika i Tekhnika Poluprovodnikov, 49:12 (2015), 1640–1643 ; Semiconductors, 49:12 (2015), 1592–1595 |
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| 6. |
V. G. Shengurov, V. Yu. Chalkov, S. A. Denisov, N. A. Alyabina, D. V. Guseinov, V. N. Trushin, A. P. Gorshkov, N. S. Volkova, M. M. Ivanova, A. V. Kruglov, D. O. Filatov, “Photodetectors on the basis of Ge/Si(001) heterostructures grown by the hot-wire CVD technique”, Fizika i Tekhnika Poluprovodnikov, 49:10 (2015), 1411–1414 ; Semiconductors, 49:10 (2015), 1365–1368 |
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| 7. |
D. O. Filatov, A. P. Gorshkov, N. S. Volkova, D. V. Guseinov, N. A. Alyabina, M. M. Ivanova, V. Yu. Chalkov, S. A. Denisov, V. G. Shengurov, “Photodiodes based on self-assembled GeSi/Si(001) nanoisland arrays grown by the combined sublimation molecular-beam epitaxy of silicon and vapor-phase epitaxy of germanium”, Fizika i Tekhnika Poluprovodnikov, 49:3 (2015), 399–405 ; Semiconductors, 49:3 (2015), 387–393 |
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| 8. |
N. S. Volkova, A. P. Gorshkov, S. V. Tikhov, N. V. Baidus, S. V. Khazanova, V. E. Degtyarov, D. O. Filatov, “Influence of the spatial arrangement of the Si $\delta$ layer on the optoelectronic properties of InGaAs/GaAs quantum-well nanoheterostructures”, Fizika i Tekhnika Poluprovodnikov, 49:2 (2015), 145–148 ; Semiconductors, 49:2 (2015), 139–142 |
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2014 |
| 9. |
N. S. Volkova, A. P. Gorshkov, D. O. Filatov, D. S. Abramkin, “Emission of photoexcited charge carriers from InAs/GaAs quantum dots grown by gas-phase epitaxy”, Pis'ma v Zh. Èksper. Teoret. Fiz., 100:3 (2014), 175–180 ; JETP Letters, 100:3 (2014), 156–161   |
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2013 |
| 10. |
N. S. Volkova, A. P. Gorshkov, A. V. Zdoroveyshchev, O. V. Vikhrova, B. N. Zvonkov, “Optoelectronic properties of heteronanostructures with combined layers of In(Ga)As/GaAs quantum wells and dots”, Fizika i Tekhnika Poluprovodnikov, 47:12 (2013), 1609–1612 ; Semiconductors, 47:12 (2013), 1583–1586 |
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2012 |
| 11. |
A. P. Gorshkov, I. A. Karpovich, E. D. Pavlova, N. S. Volkova, “Effect of He$^+$ ion irradiation on the photosensitivity spectra of In(Ga)As/GaAs quantum well and quantum dot heterostructures”, Fizika i Tekhnika Poluprovodnikov, 46:12 (2012), 1542–1545 ; Semiconductors, 46:12 (2012), 1506–1509 |
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