semiconductors,
thin films,
photovoltaics,
nanotechnology,
nanomaterials,
new materials.
Subject:
Condensed Matter Physics
Main publications:
V.F. Gremenok, V.A. Ivanov, A.V. Stanchik, I.N. Tsyrelchuk, A. Bakouied, “SnS-PbS Nanorods for Thermoelectric Application”, Proceedings of the 2nd International Conference on Modern Applications of Nanotechnology, 2015, 303-1–3
A.V. Stanchik, Yu.S. Yakovenko, S.A. Bashkirov, V.F. Gremenok, I.S. Tashlykov, “Morfologiya i topologiya elektroosazhdennykh prekursorov Su-Zn-Sn dlya solnechnykh elementov na osnove Cu2ZnSnSe4”, Fizicheskoe obrazovanie v vuzakh, 22:1 (2016), 106S–107S
A.V. Stanchik, S.A. Bashkirov, V.F. Gremenok, “Fazovyi analiz elektroosazhdennykh prekursorov Su-Zn-Sn dlya solnechnykh elementov na osnove Cu2ZnSnSe4”, Fizicheskoe obrazovanie v vuzakh, 22:1 (2016), 137S–138S
V. F. Gremenok, E. P. Zaretskaya, A. V. Stanchik, K. P. Buskis, S. T. Pashayan, A. S. Tokmajyan, A. S. Musaelyan, S. G. Petrosyan, “Study of structural and optical properties of CdS thin films depending on chemical deposition time”, Optics and Spectroscopy, 132:2 (2024), 161–168
2023
2.
T. N. Osmolovskaya, A. A. Feschenko, A. V. Stanchik, “Formation, structural and morphological properties of thin films of Cu-Sn-Ni precursors”, PFMT, 2023, no. 1(54), 38–42
2022
3.
A. Stanchik, V. F. Gremenok, E. L. Trukhanova, V. V. Khoroshko, S. Kh. Suleymanov, V. G. Dyskin, M. U. Djanklich, N. A. Kulagina, Sh. Y. Amirov, “Investigation of thin films MgAl$_{2}$O$_{4}$, deposited on the si substrates by vacuum thermal evaporation”, Comp. nanotechnol., 9:1 (2022), 125–131
A. V. Stanchik, V. A. Chumak, V. F. Gremenok, S. M. Baraishuk, “A low-temperature X-ray diffraction study of the Cu<sub>2</sub>ZnSnSe<sub>4</sub> thin films”, Mendeleev Commun., 31:5 (2021), 726–727
A. Stanchik, V. F. Gremenok, S. A. Bashkirov, M. S. Tivanov, R. L. Juškėnas, G. F. Novikov, R. Giraitis, A. M. Saad, “Microstructure and Raman scattering of Cu$_{2}$ZnSnSe$_{4}$ thin films deposited onto flexible metal substrates”, Fizika i Tekhnika Poluprovodnikov, 52:2 (2018), 227–232; Semiconductors, 52:2 (2018), 215–220
