|
|
|
Publications in Math-Net.Ru |
Citations |
|
2020 |
| 1. |
O. Naumova, B. I. Fomin, E. V. Dmitrienko, I. A. Pyshnaya, D. V. Pyshnyi, “Surface modification of SOI sensors for the detection of RNA biomarkers”, Fizika i Tekhnika Poluprovodnikov, 54:4 (2020), 394–399   ; Semiconductors, 54:4 (2020), 471–475 |
2
|
| 2. |
E. G. Zaytseva, O. Naumova, B. I. Fomin, “Profiling mobility components near the heterointerfaces of thin silicon films”, Fizika i Tekhnika Poluprovodnikov, 54:2 (2020), 124–128 ; Semiconductors, 54:2 (2020), 176–180 |
1
|
|
2017 |
| 3. |
E. G. Zaytseva, O. Naumova, B. I. Fomin, “Electron mobility in the inversion layers of fully depleted SOI films”, Fizika i Tekhnika Poluprovodnikov, 51:4 (2017), 446–452 ; Semiconductors, 51:4 (2017), 423–429 |
3
|
|
2015 |
| 4. |
O. Naumova, E. G. Zaytseva, B. I. Fomin, M. A. Ilnitskii, V. P. Popov, “Density dependence of electron mobility in the accumulation mode for fully depleted SOI films”, Fizika i Tekhnika Poluprovodnikov, 49:10 (2015), 1360–1366 ; Semiconductors, 49:10 (2015), 1316–1322 |
9
|
|
2014 |
| 5. |
V. P. Popov, M. A. Ilnitskii, O. Naumova, A. N. Nazarov, “Quantum corrections to threshold voltages for fully depleted SOI transistors with two independent gates”, Fizika i Tekhnika Poluprovodnikov, 48:10 (2014), 1348–1353 ; Semiconductors, 48:10 (2014), 1312–1317 |
6
|
|
