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Publications in Math-Net.Ru |
Citations |
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2025 |
| 1. |
E. R. Burmistrov, L. P. Avakyants, N. A. Parfentyeva, S. N. Gavrilin, “Генерация и детектирование импульсного терагерцового излучения с использованием фотопроводящих полупроводниковых антенн на основе LT-In$_x$Ga$_{1-x}$N/GaN”, Optics and Spectroscopy, 133:9 (2025), 986–994  |
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2023 |
| 2. |
E. R. Burmistrov, L. P. Avakyants, “Determination of 2DEG parameters in LED heterostructures with three quantum wells In$_x$Ga$_{1-x}$N/GaN by terahertz time-domain spectroscopy (THz-TDs)”, Fizika Tverdogo Tela, 65:2 (2023), 185–194  |
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2021 |
| 3. |
E. R. Burmistrov, L. P. Avakyants, “Investigation of the parameters of a two-dimensional electron gas in InGaN/GaN quantum wells by the method of terahertz plasmon resonance”, Fizika i Tekhnika Poluprovodnikov, 55:11 (2021), 1059–1067 |
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2020 |
| 4. |
A. È. Aslanyan, L. P. Avakyants, A. V. Chervyakov, A. N. Turkin, S. S. Mirzai, V. A. Kureshov, D. R. Sabitov, A. A. Marmalyuk, “Investigation into the internal electric-field strength in the active region of InGaN/GaN-based LED structures with various numbers of quantum wells by electrotransmission spectroscopy”, Fizika i Tekhnika Poluprovodnikov, 54:4 (2020), 420–425 ; Semiconductors, 54:4 (2020), 495–500 |
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| 5. |
A. E. Aslanyan, L. P. Avakyants, A. V. Chervyakov, A. N. Turkin, V. A. Kureshov, D. R. Sabitov, A. A. Marmalyuk, “Photoreversible current in InGaN/GaN-based LED heterostructures with different numbers of QWs”, Fizika i Tekhnika Poluprovodnikov, 54:3 (2020), 292–295 ; Semiconductors, 54:3 (2020), 362–365 |
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2019 |
| 6. |
A. È. Aslanyan, L. P. Avakyants, P. Yu. Bokov, A. V. Chervyakov, “Investigation into the distribution of built-in electric fields in LED heterostructures with multiple GaN/InGaN quantum wells by electroreflectance spectroscopy”, Fizika i Tekhnika Poluprovodnikov, 53:4 (2019), 493–499 ; Semiconductors, 53:4 (2019), 477–483 |
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2018 |
| 7. |
L. P. Avakyants, P. Yu. Bokov, I. P. Kazakov, M. A. Bazalevsky, P. M. Deev, A. V. Chervyakov, “Photoreflectance spectroscopy study of LT-GaAs layers grown on Si and GaAs substrates”, Fizika i Tekhnika Poluprovodnikov, 52:7 (2018), 708–711 ; Semiconductors, 52:7 (2018), 849–852 |
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2017 |
| 8. |
L. P. Avakyants, A. È. Aslanyan, P. Yu. Bokov, K. Yu. Polozhentsev, A. V. Chervyakov, “Electroreflectance spectra from multiple InGaN/GaN quantum wells in the nonuniform electric field of a $p$–$n$ junction”, Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 198–201 ; Semiconductors, 51:2 (2017), 189–192 |
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| 9. |
L. P. Avakyants, P. Yu. Bokov, A. V. Chervyakov, “Raman scattering in InP doped by Be$^+$-ion implantation”, Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 177–181 ; Semiconductors, 51:2 (2017), 168–172 |
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2015 |
| 10. |
L. P. Avakyants, P. Yu. Bokov, G. B. Galiev, I. P. Kazakov, A. V. Chervyakov, “Characterization of the spatial inhomogeneity of heterointerfaces in GaAs/AlGaAs quantum wells by photoreflectance spectroscopy”, Fizika i Tekhnika Poluprovodnikov, 49:9 (2015), 1238–1242 ; Semiconductors, 49:9 (2015), 1202–1206 |
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2013 |
| 11. |
R. A. Khabibullin, G. B. Galiev, E. A. Klimov, D. S. Ponomarev, I. S. Vasil'evskii, V. A. Kul'bachinskii, P. Yu. Bokov, L. P. Avakyants, A. V. Chervyakov, P. P. Maltsev, “Electrical and optical properties of near-surface AlGaAs/InGaAs/AlGaAs quantum wells with different quantum-well depths”, Fizika i Tekhnika Poluprovodnikov, 47:9 (2013), 1215–1220 ; Semiconductors, 47:9 (2013), 1203–1208 |
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1992 |
| 12. |
L. P. Avakyants, G. D. Ivlev, E. D. Obraztsova, “Raman scattering in laser-crystallized silicon”, Fizika Tverdogo Tela, 34:11 (1992), 3334–3338 |
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1990 |
| 13. |
L. P. Avakyants, V. S. Gorelik, E. D. Obraztsova, “Raman scattering in various phases of ion-implanted, laser-annealed silicon”, Fizika Tverdogo Tela, 32:5 (1990), 1507–1510 |
| 14. |
L. P. Avakyants, S. V. Aleksandrovich, E. I. Veliyulin, A. D. Efimov, E. N. Kholina, V. A. Chapnin, “Определение концентрации марганца в твердых
растворах Hg$_{1-x}$Mn$_{x}$Te методом электроотражения”, Fizika i Tekhnika Poluprovodnikov, 24:1 (1990), 193–196 |
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1987 |
| 15. |
L. P. Avakyants, D. F. Kiselev, M. M. Firsova, “Difference raman spectroscopy in $\gamma$-irradiated and neutron-irradiated $\alpha$-quartz”, Fizika Tverdogo Tela, 29:8 (1987), 2468–2470 |
| 16. |
L. P. Avakyants, I. A. Kudryashov, V. I. Shmalgauzen, “OPTIMIZATION OF PARAMETERS OF PIEZOCERAMIC MIRRORS OF ADAPTIVE OPTICS”, Zhurnal Tekhnicheskoi Fiziki, 57:6 (1987), 1209–1210 |
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1986 |
| 17. |
L. P. Avakyants, T. M. Glushkova, D. F. Kiselev, V. V. Molodtsov, “Anisotropy of acoustic anomalies at phase transition in lead germanate on hypersound frequencies”, Fizika Tverdogo Tela, 28:3 (1986), 749–753 |
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1985 |
| 18. |
L. P. Avakyants, D. F. Kiselev, A. V. Chervyakov, “Temperature dependence of $\mathrm{BiVO}_{4}$ domain structure”, Fizika Tverdogo Tela, 27:1 (1985), 231–233 |
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1983 |
| 19. |
L. P. Avakyants, D. F. Kiselev, A. V. Chervyakov, “Temperature dependence of $\mathrm{BiVO}_{4}$ refraction index”, Fizika Tverdogo Tela, 25:9 (1983), 2782–2784 |
| 20. |
L. P. Avakyants, E. F. Dudnik, D. F. Kiselev, I. E. Mnushkina, “Soft acoustic mode study in $\mathrm{BiVO}_{4}$ ferroelastic”, Fizika Tverdogo Tela, 25:6 (1983), 1910–1912 |
| 21. |
L. P. Avakyants, D. F. Kiselev, N. V. Perelomova, V. I. Sugrei, “Photoelasticity of $\mathrm{KH}_{2}\mathrm{PO}_{4},\mathrm{KD}_{2}\mathrm{PO}_{4}$ and $\mathrm{RbH}_{2}\mathrm{PO}_{4}$”, Fizika Tverdogo Tela, 25:2 (1983), 580–582 |
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