|
|
|
Publications in Math-Net.Ru |
Citations |
|
2016 |
| 1. |
V. I. Altukhov, I. S. Kasyanenko, A. V. Sankin, B. A. Bilalov, A. S. Sigov, “Calculation of the Schottky barrier and current–voltage characteristics of metal–alloy structures based on silicon carbide”, Fizika i Tekhnika Poluprovodnikov, 50:9 (2016), 1190–1194   ; Semiconductors, 50:9 (2016), 1168–1172 |
1
|
| 2. |
M. À. Aliev, S. N. Kallaev, T. M. Gadzhiev, R. M. Gadzhieva, A. M. Ismailov, B. A. Bilalov, “Production technology and optical absorption characteristics of CuIn$_{0.95}$Ga$_{0.05}$Se$_{2}$ semiconductor solid solution films”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:14 (2016), 1–6 ; Tech. Phys. Lett., 42:7 (2016), 715–717 |
3
|
|
2014 |
| 3. |
Sh. M. Ramazanov, M. A. Kurbanov, G. K. Safaraliev, B. A. Bilalov, N. I. Kargin, A. S. Gusev, “Structural properties of the epitaxial (SiC)$_{1-x}$(AlN)$_x$ solid solution films fabricated by magnetron sputtering of SiC–Al composite targets”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:7 (2014), 49–55 ; Tech. Phys. Lett., 40:4 (2014), 300–302 |
8
|
|
1984 |
| 4. |
B. A. Bilalov, G. K. Safaraliev, A. Z. Efendiev, “INVESTIGATION OF THE PROCESS OF SILICON-CARBIDE CRYSTALLIZATION FROM
LIQUID-PHASE DURING ELECTRIC-CURRENT TRANSMISSION”, Zhurnal Tekhnicheskoi Fiziki, 54:10 (1984), 2016–2020 |
|
