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Publications in Math-Net.Ru |
Citations |
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2018 |
| 1. |
V. V. Antipov, S. A. Kukushkin, A. V. Osipov, V. P. Rubets, “Epitaxial growth of cadmium selenide films on silicon with a silicon carbide buffer layer”, Fizika Tverdogo Tela, 60:3 (2018), 499–504   ; Phys. Solid State, 60:3 (2018), 504–509 |
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| 2. |
A. P. Belyaev, V. V. Antipov, V. P. Rubets, “Study of the structure of cadmium-sulfide nanowire crystals synthesized by vacuum evaporation and condensation in a quasi-closed volume”, Fizika i Tekhnika Poluprovodnikov, 52:1 (2018), 125–126 ; Semiconductors, 52:1 (2018), 118–119 |
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2017 |
| 3. |
A. P. Belyaev, V. P. Rubets, V. V. Antipov, “Influence of temperature on the rhombic shape of paracetamol molecular crystals”, Zhurnal Tekhnicheskoi Fiziki, 87:4 (2017), 624–626 ; Tech. Phys., 62:4 (2017), 645–647 |
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2016 |
| 4. |
A. P. Belyaev, V. V. Antipov, V. P. Rubets, “Formation of cadmium-sulfide nanowhiskers via vacuum evaporation and condensation in a quasi-closed volume”, Fizika i Tekhnika Poluprovodnikov, 50:3 (2016), 420–422 ; Semiconductors, 50:3 (2016), 415–417 |
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2015 |
| 5. |
V. N. Bessolov, A. S. Grashchenko, E. V. Konenkova, A. V. Myasoedov, A. V. Osipov, A. V. Redkov, S. N. Rodin, V. P. Rubets, S. A. Kukushkin, “Effect of the $n$ and $p$-type Si(100) substrates with a SiC buffer layer on the growth mechanism and structure of epitaxial layers of semipolar AlN and GaN”, Fizika Tverdogo Tela, 57:10 (2015), 1916–1921 ; Phys. Solid State, 57:10 (2015), 1966–1971 |
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2014 |
| 6. |
A. P. Belyaev, V. P. Rubets, V. V. Antipov, N. S. Bordey, “Phase transformations during the growth of paracetamol crystals from the vapor phase”, Zhurnal Tekhnicheskoi Fiziki, 84:7 (2014), 156–158 ; Tech. Phys., 59:7 (2014), 1101–1103 |
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| 7. |
A. P. Belyaev, V. P. Rubets, V. V. Antipov, N. S. Bordey, V. I. Zarembo, “Vapor-crystal phase transition in synthesis of paracetamol films by vacuum evaporation and condensation”, Zhurnal Tekhnicheskoi Fiziki, 84:3 (2014), 141–143 ; Tech. Phys., 59:3 (2014), 449–451 |
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2013 |
| 8. |
A. P. Belyaev, V. P. Rubets, V. V. Antipov, “Influence of the nature of a condensate material on the formation of an ensemble of islands during cryochemical synthesis from the vapor phase”, Fizika i Tekhnika Poluprovodnikov, 47:1 (2013), 15–17 ; Semiconductors, 47:1 (2013), 13–15 |
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2012 |
| 9. |
A. P. Belyaev, V. P. Rubets, V. V. Antipov, N. S. Bordey, “About mechanism of initial stage of formation of nanostructures in the conditions of super-low temperatures”, Nanosystems: Physics, Chemistry, Mathematics, 3:5 (2012), 103–110 |
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1992 |
| 10. |
A. P. Belyaev, V. P. Rubets, Kh. A. Toshkhodzhaev, I. P. Kalinkin, “Injection-contact effects in a heterostructure based on disordered zinc selenide”, Fizika i Tekhnika Poluprovodnikov, 26:10 (1992), 1755–1759 |
| 11. |
A. P. Belyaev, V. P. Rubets, Kh. A. Toshkhodzhaev, “Processes of charge transfer in In$_{2}$O$_{3}{-}$ZnSe$-$In heterostructure with zinc-selenide submicron layer”, Fizika i Tekhnika Poluprovodnikov, 26:5 (1992), 935–941 |
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