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Publications in Math-Net.Ru |
Citations |
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2018 |
| 1. |
E. A. Tolkacheva, V. P. Markevich, L. I. Murin, “Optical properties and the mechanism of the formation of V$_{2}$O$_{2}$ and V$_{3}$O$_{2}$ vacancy–oxygen complexes in irradiated silicon crystals”, Fizika i Tekhnika Poluprovodnikov, 52:9 (2018), 973–979   ; Semiconductors, 52:9 (2018), 1097–1103 |
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2016 |
| 2. |
Yu. M. Pokotilo, A. N. Petukh, V. V. Litvinov, V. P. Markevich, N. V. Abrosimov, A. S. Kamyshan, A. V. Giro, K. A. Solyanikova, “Formation of donors in germanium–silicon alloys implanted with hydrogen ions with different energies”, Fizika i Tekhnika Poluprovodnikov, 50:8 (2016), 1143–1145 ; Semiconductors, 50:8 (2016), 1122–1124 |
| 3. |
S. B. Lastovsky, V. P. Markevich, A. S. Yakushevich, L. I. Murin, V. P. Krylov, “Radiation-induced bistable centers with deep levels in silicon $n^{+}$–$p$ structures”, Fizika i Tekhnika Poluprovodnikov, 50:6 (2016), 767–771 ; Semiconductors, 50:6 (2016), 751–755 |
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2012 |
| 4. |
V. V. Litvinov, A. N. Petukh, Yu. M. Pokotilo, V. P. Markevich, S. B. Lastovsky, “Formation and annealing of radiation defects in tin-doped $p$-type germanium crystals”, Fizika i Tekhnika Poluprovodnikov, 46:5 (2012), 629–632 ; Semiconductors, 46:5 (2012), 611–614 |
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1992 |
| 5. |
F. P. Korshunov, V. P. Markevich, I. F. Medvedeva, L. I. Murin, “On the acceptor levels of divacancy in silicon”, Fizika i Tekhnika Poluprovodnikov, 26:11 (1992), 2006–2010 |
| 6. |
D. I. Brinkevich, V. P. Markevich, L. I. Murin, V. V. Petrov, “Kinetics of thermodonor formation in Si $\langle\text{Ge, O}\rangle$ crystals”, Fizika i Tekhnika Poluprovodnikov, 26:4 (1992), 682–690 |
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1984 |
| 7. |
V. D. Tkachev, L. F. Makarenko, V. P. Markevich, L. I. Murin, “Reconstructing Thermodonors in Silicon”, Fizika i Tekhnika Poluprovodnikov, 18:3 (1984), 526–531 |
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