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Publications in Math-Net.Ru |
Citations |
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2026 |
| 1. |
M. S. Afanasiev, D. A. Belorusov, E. I. Goldman, G. V. Chucheva, A. V. Semchenko, V. A. Pilipenko, “Высокочастотные вольт-фарадные характеристики структур металл–Ba$_{0.8}$Sr$_{0.2}$TiO$_3$–термический окисел–кремний”, Fizika Tverdogo Tela, 68:3 (2026), 429–433  |
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2025 |
| 2. |
M. S. Afanasiev, D. A. Belorusov, D. A. Kiselev, V. A. Luzanov, G. V. Chucheva, “Reliability of MIS structures based on films of barium strontium titanate and hafnium oxide”, Fizika Tverdogo Tela, 67:10 (2025), 1928–1931  |
| 3. |
D. A. Belorusov, E. I. Goldman, G. V. Chucheva, “On the properties of the transition layer between the silicon substrate and the ferroelectric or high-k-dielectric insulating gap”, Fizika Tverdogo Tela, 67:5 (2025), 832–836 |
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2023 |
| 4. |
M. S. Afanasiev, D. A. Belorusov, D. A. Kiselev, G. V. Chucheva, “Influence of the upper electrode material on the electrophysical properties of MDM structures based on ferroelectric films”, Fizika Tverdogo Tela, 65:6 (2023), 1060–1064 |
| 5. |
M. S. Afanasiev, D. A. Belorusov, D. A. Kiselev, V. A. Luzanov, G. V. Chucheva, “Formation and study of metal-insulator-semiconductor structures based on hafnium oxide films”, Fizika Tverdogo Tela, 65:4 (2023), 572–576 |
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2022 |
| 6. |
D. A. Belorusov, E. I. Goldman, G. V. Chucheva, “The effect of a strong static electric field and heating on characteristics of the high-frequency impedance of metal–ferroelectric–semiconductor structures”, Fizika Tverdogo Tela, 64:5 (2022), 556–559 |
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2021 |
| 7. |
S. M. Afanas'ev, D. A. Belorusov, D. A. Kiselev, A. A. Sivov, G. V. Chucheva, “The influence of the PZT buffer layer on electrophysical properties of MDM structures with the BST film”, Fizika Tverdogo Tela, 63:11 (2021), 1895–1900 |
| 8. |
D. A. Belorusov, E. I. Goldman, G. V. Chucheva, “A weak manifestation of the field effect in metal-dielectric-semiconductor structures with a ferroelectric insulating layer
Ba$_{x}$Sr$_{1-x}$TiO$_{3}$”, Fizika Tverdogo Tela, 63:11 (2021), 1887–1889 |
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| 9. |
D. A. Belorusov, E. I. Goldman, V. G. Naryshkina, G. V. Chucheva, “Silicon ultrathin oxide (4.2 nm) – polysilicon structures resistant to field damages”, Fizika i Tekhnika Poluprovodnikov, 55:1 (2021), 24–27 ; Semiconductors, 55:1 (2021), 21–24 |
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2020 |
| 10. |
M. S. Afanasiev, D. A. Belorusov, D. A. Kiselev, A. A. Sivov, G. V. Chucheva, “Dependence of the electrophysical characteristics of metal–ferroelectric–semiconductor structures on the field-electrode material”, Fizika i Tekhnika Poluprovodnikov, 54:11 (2020), 1219–1223 ; Semiconductors, 54:11 (2020), 1445–1449 |
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