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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
A. S. Parshin, Yu. L. Mikhlin, G. A. Alexandrova, “Spectroscopy of reflected electron energy losses of $\gamma$-Fe$_{2}$O$_{3}$”, Fizika Tverdogo Tela, 63:8 (2021), 1049–1055   ; Phys. Solid State, 63:8 (2021), 1294–1300 |
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2016 |
| 2. |
A. S. Parshin, A. Yu. Igumenov, Yu. L. Mikhlin, O. P. Pchelyakov, V. S. Zhigalov, “Comparative analysis of characteristic electron energy loss spectra and inelastic scattering cross-section spectra of Fe”, Fizika Tverdogo Tela, 58:5 (2016), 881–887 ; Phys. Solid State, 58:5 (2016), 908–914 |
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| 3. |
A. S. Parshin, A. Yu. Igumenov, Yu. L. Mikhlin, O. P. Pchelyakov, V. S. Zhigalov, “Electron spectroscopy of iron disilicide”, Zhurnal Tekhnicheskoi Fiziki, 86:9 (2016), 136–140 ; Tech. Phys., 61:9 (2016), 1418–1422 |
4
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| 4. |
A. S. Parshin, S. A. Kushchenkov, O. P. Pchelyakov, Yu. L. Mikhlin, “Layer-by-layer analysis of the thickness distribution of silicon dioxide in the structure SiO$_{2}$/Si(111) by inelastic electron scattering cross-section spectroscopy”, Fizika i Tekhnika Poluprovodnikov, 50:3 (2016), 344–349 ; Semiconductors, 50:3 (2016), 339–344 |
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2015 |
| 5. |
A. S. Parshin, A. Yu. Igumenov, Yu. L. Mikhlin, O. P. Pchelyakov, A. I. Nikiforov, V. A. Timofeev, “On the fine structure of spectra of the inelastic-electron-scattering cross section and the Si surface parameter”, Fizika i Tekhnika Poluprovodnikov, 49:4 (2015), 435–439 ; Semiconductors, 49:4 (2015), 423–427 |
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2014 |
| 6. |
A. S. Parshin, E. P. P’yanovskaya, O. P. Pchelyakov, Yu. L. Mikhlin, A. I. Nikiforov, V. A. Timofeev, M. Yu. Yesin, “Inelastic electron scattering cross-section spectroscopy of Ge$_x$Si$_{1-x}$ nanoheterostructures”, Fizika i Tekhnika Poluprovodnikov, 48:2 (2014), 237–241 ; Semiconductors, 48:2 (2014), 224–227 |
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2011 |
| 7. |
A. S. Parshin, S. A. Kushchenkov, G. A. Alexandrova, S. G. Ovchinnikov, “New opportunities for quantitative analysis as applied to reflected electron energy loss spectroscopy of Fe/Si structures”, Zhurnal Tekhnicheskoi Fiziki, 81:5 (2011), 69–74 ; Tech. Phys., 56:5 (2011), 656–661 |
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