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Publications in Math-Net.Ru |
Citations |
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2022 |
| 1. |
I. E. Tyschenko, E. V. Spesivtsev, A. A. Shklyaev, V. P. Popov, “Structural changes in nanometer-thick silicon-on-insulator films during high-temperature annealing”, Fizika i Tekhnika Poluprovodnikov, 56:3 (2022), 320–327   |
| 2. |
I. E. Tyschenko, R. A. Khmelnitskii, V. V. Saraikin, V. A. Volodin, V. P. Popov, “Germanium diffusion from buried SiO$_2$ layer and SiGe phase formation”, Fizika i Tekhnika Poluprovodnikov, 56:2 (2022), 192–198 |
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2021 |
| 3. |
I. E. Tyschenko, M. Voelskow, Si. Zh, V. P. Popov, “Diffusion of In atoms in SiO$_{2}$ films implanted with As$^{+}$ ions”, Fizika i Tekhnika Poluprovodnikov, 55:3 (2021), 217–223 ; Semiconductors, 55:3 (2021), 289–295 |
| 4. |
I. E. Tyschenko, R. Zhang, “Structural and optical-phonon properties of InSb nanocrystals synthesized in Si and SiO$_2$ matrices”, Fizika i Tekhnika Poluprovodnikov, 55:1 (2021), 59–68 ; Semiconductors, 55:1 (2021), 76–85 |
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2019 |
| 5. |
I. E. Tyschenko, M. Voelskow, A. N. Mikhaylov, D. I. Tetelbaum, “Diffusion and interaction of In and As implanted into SiO$_2$ films”, Fizika i Tekhnika Poluprovodnikov, 53:8 (2019), 1023–1029 ; Semiconductors, 53:8 (2019), 1004–1010 |
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| 6. |
I. E. Tyschenko, V. A. Volodin, V. P. Popov, “Raman scattering in InSb spherical nanocrystals ion-synthesized in silicon-oxide films”, Fizika i Tekhnika Poluprovodnikov, 53:4 (2019), 502–507 ; Semiconductors, 53:4 (2019), 493–498 |
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| 7. |
I. E. Tyschenko, I. V. Popov, E. V. Spesivtsev, “Anodic oxidation of hydrogen-transferred silicon-on-insulator layers”, Fizika i Tekhnika Poluprovodnikov, 53:2 (2019), 253–257 ; Semiconductors, 53:2 (2019), 241–245 |
| 8. |
I. E. Tyschenko, E. D. Zhanaev, V. P. Popov, “Bonding energy of silicon and sapphire wafers at elevated temperatures of joining”, Fizika i Tekhnika Poluprovodnikov, 53:1 (2019), 65–69 ; Semiconductors, 53:1 (2019), 60–64 |
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2018 |
| 9. |
I. E. Tyschenko, G. K. Krivyakin, V. A. Volodin, “Ion-beam synthesis of the crystalline Ge phase in SiO$_{x}$N$_{y}$ films upon annealing under high pressure”, Fizika i Tekhnika Poluprovodnikov, 52:2 (2018), 280–284 ; Semiconductors, 52:2 (2018), 268–272 |
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2017 |
| 10. |
I. E. Tyschenko, A. G. Cherkov, “Diffusion-Controlled growth of Ge nanocrystals in SiO$_{2}$ films under conditions of ion synthesis at high pressure”, Fizika i Tekhnika Poluprovodnikov, 51:10 (2017), 1414–1419 ; Semiconductors, 51:10 (2017), 1364–1369 |
| 11. |
I. E. Tyschenko, A. G. Cherkov, V. A. Volodin, M. Voelskow, “Specific features of the ion-beam synthesis of Ge nanocrystals in SiO$_{2}$ thin films”, Fizika i Tekhnika Poluprovodnikov, 51:9 (2017), 1289–1294 ; Semiconductors, 51:9 (2017), 1240–1246 |
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2015 |
| 12. |
I. E. Tyschenko, “An origin of orange (2 eV) photoluminescence in SiO$_2$ films implanted with high Si$^+$-ion doses”, Fizika i Tekhnika Poluprovodnikov, 49:9 (2015), 1212–1216 ; Semiconductors, 49:9 (2015), 1176–1180 |
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2014 |
| 13. |
I. E. Tyschenko, V. A. Volodin, V. V. Kozlovsky, V. P. Popov, “Effect of hydrostatic pressure during the annealing of silicon-on-insulator films implanted with a high hydrogen-ion dose”, Fizika i Tekhnika Poluprovodnikov, 48:10 (2014), 1339–1343 ; Semiconductors, 48:10 (2014), 1303–1307 |
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| 14. |
I. E. Tyschenko, M. Voelskow, A. G. Cherkov, V. P. Popov, “Ion-beam synthesis of InSb nanocrystals in the buried SiO$_2$ layer of a silicon-on-insulator structure”, Fizika i Tekhnika Poluprovodnikov, 48:9 (2014), 1228–1233 ; Semiconductors, 48:9 (2014), 1196–1201 |
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2013 |
| 15. |
I. E. Tyschenko, V. A. Volodin, M. Voelskow, A. G. Cherkov, V. P. Popov, “Crystallization induced by thermal annealing with millisecond pulses in silicon-on-insulator films implanted with high doses of hydrogen ions”, Fizika i Tekhnika Poluprovodnikov, 47:5 (2013), 591–597 ; Semiconductors, 47:5 (2013), 606–611 |
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2012 |
| 16. |
I. E. Tyschenko, V. A. Volodin, “Quantum-confinement effect in silicon-on-insulator films implanted with high doses of hydrogen ions”, Fizika i Tekhnika Poluprovodnikov, 46:10 (2012), 1309–1313 ; Semiconductors, 46:10 (2012), 1286–1290 |
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1992 |
| 17. |
G. A. Kachurin, G. V. Gadiyak, V. I. Shatrov, I. E. Tyschenko, “Ascending diffusion of impurity due to ion irradiation of heated silicon: numerical modeling”, Fizika i Tekhnika Poluprovodnikov, 26:11 (1992), 1977–1982 |
| 18. |
G. A. Kachurin, I. E. Tyschenko, A. E. Plotnikov, V. P. Popov, “Growth of monocrystalline $\alpha\text{-Si}_{3}\text{N}_{4}$ in buried layers produced by low-intensity implantation of N$^{+}$ ions into heated silicon”, Fizika i Tekhnika Poluprovodnikov, 26:8 (1992), 1390–1393 |
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