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Publications in Math-Net.Ru |
Citations |
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2024 |
| 1. |
D. Yu. Protasov, P. P. Kamesh, K. A. Svit, D. V. Dmitriev, A. A. Makeeva, E. M. Rzaev, K. S. Zhuravlev, “The electrochemical profiling of $n^+/n$ GaAs structures for field-effect transistors”, Fizika i Tekhnika Poluprovodnikov, 58:1 (2024), 53–61   ; Semiconductors, 58:3 (2024), 254–262 |
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2023 |
| 2. |
M. A. Sukhanov, D. Yu. Protasov, A. K. Bakarov, A. A. Makeeva, I. D. Loshkarev, K. S. Zhuravlev, “InSb/GaAs heterostructures for magnetic field sensors”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:20 (2023), 27–30 |
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2022 |
| 3. |
D. Yu. Protasov, D. V. Dmitriev, K. S. Zhuravlev, G. I. Ayzenshtat, A. Yu. Yushchenko, A. B. Pashkovskii, “AlGaAs/InGaAs/GaAs heterostructures for pHEMT switching transistors”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:17 (2022), 20–23 |
| 4. |
A. B. Pashkovskii, S. A. Bogdanov, A. K. Bakarov, K. S. Zhuravlev, V. G. Lapin, V. M. Lukashin, S. N. Karpov, D. Yu. Protasov, I. A. Rogachev, E. V. Tereshkin, “The electrons drift velocity overshot in inverted transistor heterostructures with donor-acceptor doping and additional digital potential barriers”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:12 (2022), 11–14 |
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2021 |
| 5. |
D. V. Gulyaev, D. V. Dmitriev, N. V. Fateev, D. Yu. Protasov, A. S. Kozhukhov, K. S. Zhuravlev, “GaAs/AlGaAs- and InGaAs/AlGaAs heterostructures for high-power semiconductor infrared emitters”, Zhurnal Tekhnicheskoi Fiziki, 91:11 (2021), 1727–1731 |
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2020 |
| 6. |
M. A. Sukhanov, A. K. Bakarov, D. Yu. Protasov, K. S. Zhuravlev, “AlInSb/InSb heterostructures for IR photodetectors grown by molecular-beam epitaxy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:4 (2020), 3–6 ; Tech. Phys. Lett., 46:2 (2020), 154–157 |
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2019 |
| 7. |
T. V. Malin, D. S. Milakhin, I. A. Aleksandrov, V. E. Zemlyakov, V. I. Egorkin, A. A. Zaitsev, D. Yu. Protasov, A. S. Kozhukhov, B. Ya. Ber, D. Yu. Kazantsev, V. G. Mansurov, K. S. Zhuravlev, “Undoped high-resistance GaN buffer layer for AlGaN/GaN high-electron-mobility transistors”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:15 (2019), 21–24 ; Tech. Phys. Lett., 45:8 (2019), 761–764 |
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2018 |
| 8. |
D. Yu. Protasov, A. K. Bakarov, A. I. Toropov, B. Ya. Ber, D. Yu. Kazantsev, K. S. Zhuravlev, “Mobility of the two-dimensional electron gas in DA-$p$HEMT heterostructures with various $\delta$–$n$-layer profile widths”, Fizika i Tekhnika Poluprovodnikov, 52:1 (2018), 48–56 ; Semiconductors, 52:1 (2018), 44–52 |
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| 9. |
D. Yu. Protasov, D. V. Gulyaev, A. K. Bakarov, A. I. Toropov, E. V. Erofeev, K. S. Zhuravlev, “Increasing saturated electron-drift velocity in donor–acceptor doped phemt heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:6 (2018), 77–84 ; Tech. Phys. Lett., 44:3 (2018), 260–262 |
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2017 |
| 10. |
D. Yu. Protasov, A. K. Bakarov, A. I. Toropov, B. Ya. Ber, D. Yu. Kazantsev, K. S. Zhuravlev, “Mobility of the two-dimensional electron gas in DA-$p$HEMT heterostructures with various $\delta$–$n$-layer profile widths”, Fizika i Tekhnika Poluprovodnikov, 51:12 (2017), 1696 ; Semiconductors, 52:1 (2018), 44–52 |
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2015 |
| 11. |
T. V. Malin, A. M. Gilinskii, V. G. Mansurov, D. Yu. Protasov, A. K. Shestakov, E. B. Yakimov, K. S. Zhuravlev, “MBE-grown AlGaN/GaN heterostructures for UV photodetectors”, Zhurnal Tekhnicheskoi Fiziki, 85:4 (2015), 67–73 ; Tech. Phys., 60:3 (2015), 546–552 |
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| 12. |
T. V. Malin, A. M. Gilinskii, V. G. Mansurov, D. Yu. Protasov, A. S. Kozhukhov, E. B. Yakimov, K. S. Zhuravlev, “Increase in the diffusion length of minority carriers in Al$_x$Ga$_{1-x}$N ($x$ = 0–0.1) fabricated by ammonia molecular beam epitaxy”, Fizika i Tekhnika Poluprovodnikov, 49:10 (2015), 1329–1334 ; Semiconductors, 49:10 (2015), 1285–1289 |
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2014 |
| 13. |
D. Yu. Protasov, N. R. Vitsina, N. A. Valisheva, F. N. Dultsev, T. V. Malin, K. S. Zhuravlev, “Chromium mask for plasma-chemical etching of Al$_x$Ga$_{1-x}$N layers”, Zhurnal Tekhnicheskoi Fiziki, 84:9 (2014), 96–99 ; Tech. Phys., 59:9 (2014), 1356–1359 |
| 14. |
K. A. Svit, D. Yu. Protasov, L. L. Sveshnikova, A. K. Shestakov, S. A. Teys, K. S. Zhuravlev, “Tunneling transport through passivated CdS nanocrystal arrays grown by the Langmuir–Blodgett method”, Fizika i Tekhnika Poluprovodnikov, 48:9 (2014), 1237–1242 ; Semiconductors, 48:9 (2014), 1205–1210 |
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2013 |
| 15. |
D. Yu. Protasov, T. V. Malin, A. V. Tikhonov, A. F. Tsatsul'nikov, K. S. Zhuravlev, “Electron scattering in AlGaN/GaN heterostructures with a two-dimensional electron gas”, Fizika i Tekhnika Poluprovodnikov, 47:1 (2013), 36–47 ; Semiconductors, 47:1 (2013), 33–44 |
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