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Publications in Math-Net.Ru |
Citations |
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2020 |
| 1. |
E. V. Okulich, V. I. Okulich, D. I. Tetelbaum, “Calculating silicon-amorphization doses under medium-energy light-ion irradiation”, Fizika i Tekhnika Poluprovodnikov, 54:8 (2020), 771–777   ; Semiconductors, 54:8 (2020), 916–922 |
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| 2. |
E. V. Okulich, V. I. Okulich, D. I. Tetelbaum, “Impact of oxygen vacancies on the formation and structure of filaments in SiO$_2$-based memristors”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:1 (2020), 24–27 ; Tech. Phys. Lett., 46:1 (2020), 19–22 |
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2019 |
| 3. |
E. V. Okulich, M. N. Koryazhkina, D. S. Korolev, A. I. Belov, M. E. Shenina, A. N. Mikhaylov, D. I. Tetelbaum, I. N. Antonov, Yu. A. Dudin, “The effect of irradiation with Si$^{+}$ ions on the resistive switching of memristive structures based on yttria stabilized zirconia”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:14 (2019), 3–6 ; Tech. Phys. Lett., 45:7 (2019), 690–693 |
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2018 |
| 4. |
E. V. Okulich, V. I. Okulich, D. I. Tetelbaum, “Calculation of the influence of the ion current density and temperature on the accumulation kinetics of point defects under the irradiation of Si with light ions”, Fizika i Tekhnika Poluprovodnikov, 52:9 (2018), 967–972 ; Semiconductors, 52:9 (2018), 1091–1096 |
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2016 |
| 5. |
D. S. Korolev, A. N. Mikhaylov, A. I. Belov, V. K. Vasil'ev, D. V. Guseinov, E. V. Okulich, A. A. Shemukhin, S. I. Surodin, D. E. Nikolichev, A. V. Nezhdanov, A. V. Pirogov, D. A. Pavlov, D. I. Tetelbaum, “Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride”, Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 274–278 ; Semiconductors, 50:2 (2016), 271–275 |
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2015 |
| 6. |
A. I. Belov, A. N. Mikhaylov, D. S. Korolev, V. A. Sergeev, E. V. Okulich, I. N. Antonov, A. P. Kasatkin, E. G. Gryaznov, A. P. Yatmanov, O. N. Gorshkov, D. I. Tetelbaum, “The effect of irradiation with H$^+$ and Ne$^+$ ions on resistive switching in metal–insulator–metal memristive structures based on SiO$_x$”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:19 (2015), 81–89 ; Tech. Phys. Lett., 41:10 (2015), 957–960 |
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