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Publications in Math-Net.Ru |
Citations |
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2022 |
| 1. |
P. B. Boldyrevskii, D. O. Filatov, V. A. Belyakov, A. P. Gorshkov, I. V. Makartsev, A. V. Nezhdanov, M. V. Revin, À. D. Filatov, P. A. Yunin, “Effect of substrate misorientation on the properties of $p$-HEMT GaAs-based nanoheterostructures formed during MOCVD epitaxy”, Zhurnal Tekhnicheskoi Fiziki, 92:10 (2022), 1582–1587   |
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2020 |
| 2. |
P. B. Boldyrevskii, D. O. Filatov, À. D. Filatov, I. A. Kazantseva, M. V. Revin, P. A. Yunin, “Atomic force microscopy examination of elementary processes in metalorganic compound hydride epitaxy of GaAs-based nanoheterostructures”, Zhurnal Tekhnicheskoi Fiziki, 90:5 (2020), 826–830 ; Tech. Phys., 65:5 (2020), 791–794 |
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2018 |
| 3. |
P. B. Boldyrevskii, D. O. Filatov, I. A. Kazantseva, M. V. Revin, D. S. Smotrin, P. A. Yunin, “Influence of the rotation frequency of a disk substrate holder on the crystal structure characteristics of MOCVD-grown GaAs layers”, Zhurnal Tekhnicheskoi Fiziki, 88:2 (2018), 219–223 ; Tech. Phys., 63:2 (2018), 211–215 |
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2017 |
| 4. |
E. L. Pankratov, P. B. Boldyrevskii, “Models of heat-and-mass transfer processes at vapor-phase epitaxy of semiconductor layers”, University proceedings. Volga region. Physical and mathematical sciences, 2017, no. 2, 91–107 |
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2016 |
| 5. |
E. L. Pankratov, P. B. Boldyrevskii, “Convective diffusion from gas to a rotating disk”, Prikl. Mekh. Tekh. Fiz., 57:4 (2016), 74–83 ; J. Appl. Mech. Tech. Phys., 57:4 (2016), 637–645 |
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2015 |
| 6. |
P. B. Boldyrevskii, A. G. Korovin, S. A. Denisov, S. P. Svetlov, V. G. Shengurov, “Analysis of thickness unevenness of the epitaxial silicon layer during deposition from sublimation sources in a vacuum”, University proceedings. Volga region. Physical and mathematical sciences, 2015, no. 4, 93–100 |
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2014 |
| 7. |
P. B. Boldyrevskii, A. G. Korovin, S. A. Denisov, S. P. Svetlov, V. G. Shengurov, “Thickness uniformity of silicon layers grown from a sublimation source by molecular-beam epitaxy”, Zhurnal Tekhnicheskoi Fiziki, 84:11 (2014), 155–158 ; Tech. Phys., 59:11 (2014), 1732–1735 |
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