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Publications in Math-Net.Ru |
Citations |
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2023 |
| 1. |
A. I. Struchkov, K. V. Karabeshkin, P. A. Karaseov, A. I. Titov, “Analysis of individual collision cascade parameters during irradiation of $\beta$-Ga$_2$O$_3$ by atomic and molecular ions”, Fizika i Tekhnika Poluprovodnikov, 57:9 (2023), 738–742   |
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2022 |
| 2. |
P. A. Karaseov, K. V. Karabeshkin, A. I. Struchkov, A. I. Pechnikov, V. I. Nikolaev, V. D. Andreeva, A. I. Titov, “Radiation damage accumulation in $\alpha$-Ga$_2$O$_3$ under P and PF$_4$ ion bombardment”, Fizika i Tekhnika Poluprovodnikov, 56:9 (2022), 882–887 ; Semiconductors, 57:10 (2023), 459–464 |
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2020 |
| 3. |
A. E. Kalyadin, K. F. Shtel'makh, P. N. Aruev, V. V. Zabrodskii, K. V. Karabeshkin, E. I. Shek, N. A. Sobolev, “Silicon light-emitting diodes with luminescence from (113) defects”, Fizika i Tekhnika Poluprovodnikov, 54:6 (2020), 580–584 ; Semiconductors, 54:6 (2020), 687–690 |
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| 4. |
M. S. Tuzhilkin, P. G. Bespalova, M. V. Mishin, I. E. Kolesnikov, K. V. Karabeshkin, P. A. Karaseov, A. I. Titov, “Formation of Au nanoparticles and features of etching of a Si substrate under irradiation with atomic and molecular ions”, Fizika i Tekhnika Poluprovodnikov, 54:1 (2020), 90–96 ; Semiconductors, 54:1 (2020), 137–143 |
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2019 |
| 5. |
A. I. Titov, K. V. Karabeshkin, P. A. Karaseov, A. I. Struchkov, “Do chemical effects affect the accumulation of structural damage during the implantation of fluorine ions into GaN?”, Fizika i Tekhnika Poluprovodnikov, 53:11 (2019), 1455–1458 ; Semiconductors, 53:11 (2019), 1415–1418 |
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| 6. |
N. A. Sobolev, V. I. Sakharov, I. T. Serenkov, A. D. Bondarev, K. V. Karabeshkin, E. V. Fomin, A. E. Kalyadin, V. M. Mikushkin, E. I. Shek, E. V. Sherstnev, “Defect formation under nitrogen-ion implantation and subsequent annealing in GaAs structures with an uncovered surface and a surface covered with an AlN film”, Fizika i Tekhnika Poluprovodnikov, 53:4 (2019), 437–440 ; Semiconductors, 53:4 (2019), 415–418 |
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2018 |
| 7. |
N. A. Sobolev, A. E. Kalyadin, K. V. Karabeshkin, R. N. Kyutt, V. M. Mikushkin, E. I. Shek, E. V. Sherstnev, V. I. Vdovin, “Defect structure of GaAs layers implanted with nitrogen ions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:18 (2018), 24–30 ; Tech. Phys. Lett., 44:9 (2018), 817–819 |
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| 8. |
N. A. Sobolev, B. Ya. Ber, D. Yu. Kazantsev, A. E. Kalyadin, K. V. Karabeshkin, V. M. Mikushkin, V. I. Sakharov, I. T. Serenkov, E. I. Shek, E. V. Sherstnev, N. M. Shmidt, “The effect of dose of nitrogen-ion implantation on the concentration of point defects introduced into GaAs layers”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:13 (2018), 44–50 ; Tech. Phys. Lett., 44:7 (2018), 574–576 |
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2017 |
| 9. |
N. A. Sobolev, A. E. Kalyadin, V. I. Sakharov, I. T. Serenkov, E. I. Shek, K. V. Karabeshkin, P. A. Karaseov, A. I. Titov, “Dislocation-related photoluminescence in silicon implanted with fluorine ions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:1 (2017), 14–20 ; Tech. Phys. Lett., 43:1 (2017), 50–52 |
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2016 |
| 10. |
N. A. Sobolev, A. E. Kalyadin, P. N. Aruev, V. V. Zabrodskii, E. I. Shek, K. F. Shtel'makh, K. V. Karabeshkin, “Effect of the implantation dose and annealing time on the luminescence properties of (113) defects in silicon implanted by oxygen ions”, Fizika Tverdogo Tela, 58:12 (2016), 2411–2414 ; Phys. Solid State, 58:12 (2016), 2499–2502 |
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| 11. |
K. V. Karabeshkin, P. A. Karaseov, A. I. Titov, “Effect of an increase in the density of collision cascades on the efficiency of the generation of primary displacements during the ion bombardment of Si”, Fizika i Tekhnika Poluprovodnikov, 50:8 (2016), 1009–1015 ; Semiconductors, 50:8 (2016), 989–995 |
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2014 |
| 12. |
P. A. Karaseov, K. V. Karabeshkin, A. I. Titov, V. B. Shilov, G. M. Ermolaeva, V. G. Maslov, A. O. Orlova, “Nonlinear optical effect upon the irradiation of GaN with cluster ions”, Fizika i Tekhnika Poluprovodnikov, 48:4 (2014), 462–466 ; Semiconductors, 48:4 (2014), 446–450 |
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2013 |
| 13. |
K. V. Karabeshkin, P. A. Karaseov, A. I. Titov, “Damage formation in Si under irradiation with PF$^+_n$ ions of different energies”, Fizika i Tekhnika Poluprovodnikov, 47:2 (2013), 206–210 ; Semiconductors, 47:2 (2013), 242–246 |
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