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Publications in Math-Net.Ru |
Citations |
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2019 |
| 1. |
A. È. Aslanyan, L. P. Avakyants, P. Yu. Bokov, A. V. Chervyakov, “Investigation into the distribution of built-in electric fields in LED heterostructures with multiple GaN/InGaN quantum wells by electroreflectance spectroscopy”, Fizika i Tekhnika Poluprovodnikov, 53:4 (2019), 493–499   ; Semiconductors, 53:4 (2019), 477–483 |
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2018 |
| 2. |
L. P. Avakyants, P. Yu. Bokov, I. P. Kazakov, M. A. Bazalevsky, P. M. Deev, A. V. Chervyakov, “Photoreflectance spectroscopy study of LT-GaAs layers grown on Si and GaAs substrates”, Fizika i Tekhnika Poluprovodnikov, 52:7 (2018), 708–711 ; Semiconductors, 52:7 (2018), 849–852 |
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2017 |
| 3. |
L. P. Avakyants, A. È. Aslanyan, P. Yu. Bokov, K. Yu. Polozhentsev, A. V. Chervyakov, “Electroreflectance spectra from multiple InGaN/GaN quantum wells in the nonuniform electric field of a $p$–$n$ junction”, Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 198–201 ; Semiconductors, 51:2 (2017), 189–192 |
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L. P. Avakyants, P. Yu. Bokov, A. V. Chervyakov, “Raman scattering in InP doped by Be$^+$-ion implantation”, Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 177–181 ; Semiconductors, 51:2 (2017), 168–172 |
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2015 |
| 5. |
L. P. Avakyants, P. Yu. Bokov, G. B. Galiev, I. P. Kazakov, A. V. Chervyakov, “Characterization of the spatial inhomogeneity of heterointerfaces in GaAs/AlGaAs quantum wells by photoreflectance spectroscopy”, Fizika i Tekhnika Poluprovodnikov, 49:9 (2015), 1238–1242 ; Semiconductors, 49:9 (2015), 1202–1206 |
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2013 |
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R. A. Khabibullin, G. B. Galiev, E. A. Klimov, D. S. Ponomarev, I. S. Vasil'evskii, V. A. Kul'bachinskii, P. Yu. Bokov, L. P. Avakyants, A. V. Chervyakov, P. P. Maltsev, “Electrical and optical properties of near-surface AlGaAs/InGaAs/AlGaAs quantum wells with different quantum-well depths”, Fizika i Tekhnika Poluprovodnikov, 47:9 (2013), 1215–1220 ; Semiconductors, 47:9 (2013), 1203–1208 |
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