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Publications in Math-Net.Ru |
Citations |
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2025 |
| 1. |
V. A. Sharov, P. A. Alekseev, V. V. Fedorov, I. S. Mukhin, “Investigation of the doping level of semiconductor nanowires via Raman spectroscopy”, Fizika Tverdogo Tela, 67:3 (2025), 460–463   |
| 2. |
E. V. Nikitina, E. V. Pirogov, A. K. Kaveev, V. V. Fedorov, “Effect of buffer layer on the characteristics of GaPN layers grown by molecular beam epitaxy on silicon substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:10 (2025), 7–10 |
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2024 |
| 3. |
B. B. Krichevtsov, A. M. Korovin, S. M. Suturin, A. A. Levin, N. S. Sokolov, V. V. Fedorov, A. V. Telegin, D. A. Shishkin, “BaM hexaferrite (BaFe$_{12}$O$_{19}$) thin films on Al$_2$O$_3$ (01–12) substrates: crystal structure and magnetic properties”, Optics and Spectroscopy, 132:11 (2024), 1123–1126 |
| 4. |
A. S. Funtikova, A. M. Mozharov, V. A. Mastalieva, V. V. Neplokh, I. S. Mukhin, V. V. Fedorov, “Numerical modeling of second harmonic generation in Si nanoparticles”, Fizika i Tekhnika Poluprovodnikov, 58:9 (2024), 464–466 |
| 5. |
A. K. Kaveev, D. V. Miniv, V. V. Fedorov, “Formation of InAs$_{1-x}$N$_x$ islands and InAs stem-assisted InAs$_{1-x}$N$_x$ nanowires by means of epitaxial growth on silicon”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:17 (2024), 7–10 |
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2022 |
| 6. |
A. S. Goltaev, A. A. Vorobyev, A. M. Mozharov, A. V. Pavlov, D. M. Mitin, V. V. Fedorov, Yu. S. Berdnikov, I. S. Mukhin, “Flexible solar cells based on GaAs/AlGaAs heterostructure with improved weight and dimension characteristics”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:18 (2022), 6–9 |
| 7. |
A. A. Koryakin, Yu. A. Eremeev, S. V. Fedina, V. V. Fedorov, “Growth mechanism of monolayer on the top facet of Ga-catalyzed GaAs and GaP nanowires”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:4 (2022), 20–23 |
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2018 |
| 8. |
A. M. Mozharov, A. A. Vasiliev, A. D. Bolshakov, G. A. Sapunov, V. V. Fedorov, G. E. Cirlin, I. S. Mukhin, “Core-shell III-nitride nanowire heterostructure: negative differential resistance and device application potential”, Fizika i Tekhnika Poluprovodnikov, 52:4 (2018), 475 ; Semiconductors, 52:4 (2018), 489–492 |
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2013 |
| 9. |
M. I. Vexler, S. È. Tyaginov, Yu. Yu. Illarionov, Yew Kwang Sing, Ang Diing Shenp, V. V. Fedorov, D. V. Isakov, “A general simulation procedure for the electrical characteristics of metal-insulator-semiconductor tunnel structures”, Fizika i Tekhnika Poluprovodnikov, 47:5 (2013), 675–683 ; Semiconductors, 47:5 (2013), 686–694 |
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| 10. |
Yu. Yu. Illarionov, M. I. Vexler, D. Isakov, V. V. Fedorov, Yew Kwang Sing, “Analysis of the electroluminescence features of silicon metal-insulator-semiconductor structures as a tool for diagnostics of the injection properties of a dielectric layer”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:19 (2013), 76–85 ; Tech. Phys. Lett., 39:10 (2013), 878–882 |
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