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Publications in Math-Net.Ru |
Citations |
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2018 |
| 1. |
S. S. Pushkarev, M. M. Grekhov, N. V. Zenchenko, “X-ray diffraction analysis of features of the crystal structure of GaN/Al$_{0.32}$Ga$_{0.68}$N HEMT-heterostructures by the Williamson–Hall method”, Fizika i Tekhnika Poluprovodnikov, 52:6 (2018), 586–590   ; Semiconductors, 52:6 (2018), 734–738 |
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2017 |
| 2. |
D. S. Ponomarev, R. A. Khabibullin, A. E. Yachmenev, P. P. Maltsev, M. M. Grekhov, I. E. Ilyakov, B. V. Shishkin, R. A. Akhmedzhanov, “Terahertz radiation in In$_{0.38}$Ga$_{0.62}$As, grown on a GaAs wafer with a metamorphic buffer layer under femtosecond laser excitation”, Fizika i Tekhnika Poluprovodnikov, 51:4 (2017), 535–539 ; Semiconductors, 51:4 (2017), 509–513 |
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| 3. |
G. B. Galiev, M. M. Grekhov, G. Kh. Kitaeva, E. A. Klimov, A. N. Klochkov, O. S. Kolentsova, V. V. Kornienko, K. A. Kuznetsov, P. P. Maltsev, S. S. Pushkarev, “Terahertz-radiation generation in low-temperature InGaAs epitaxial films on (100) and (411) InP substrates”, Fizika i Tekhnika Poluprovodnikov, 51:3 (2017), 322–330 ; Semiconductors, 51:3 (2017), 310–317 |
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2016 |
| 4. |
I. S. Vasil'evskii, S. S. Pushkarev, M. M. Grekhov, A. N. Vinichenko, D. V. Lavrukhin, O. S. Kolentsova, “Features of the diagnostics of metamorphic InAlAs/InGaAs/InAlAs nanoheterostructures by high-resolution X-ray diffraction in the $\omega$-scanning mode”, Fizika i Tekhnika Poluprovodnikov, 50:4 (2016), 567–573 ; Semiconductors, 50:4 (2016), 559–565 |
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G. B. Galiev, E. A. Klimov, M. M. Grekhov, S. S. Pushkarev, D. V. Lavrukhin, P. P. Maltsev, “Structural and photoluminescence properties of low-temperature GaAs grown on GaAs(100) and GaAs(111)A substrates”, Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 195–203 ; Semiconductors, 50:2 (2016), 195–203 |
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2014 |
| 6. |
I. S. Vasil'evskii, A. N. Vinichenko, M. M. Grekhov, V. P. Gladkov, N. I. Kargin, M. N. Strikhanov, “Technology and electronic properties of PHEMT AlGaAs/In$_{y(z)}$Ga$_{1-y(z)}$As/GaAs compositionally graded quantum wells”, Fizika i Tekhnika Poluprovodnikov, 48:9 (2014), 1258–1264 ; Semiconductors, 1226–1232 |
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