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Publications in Math-Net.Ru |
Citations |
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2017 |
| 1. |
D. A. Grachev, A. V. Ershov, I. A. Karabanova, A. V. Pirogov, A. V. Nezhdanov, A. I. Mashin, D. A. Pavlov, “Influence of the deposition and annealing temperatures on the luminescence of germanium nanocrystals formed in GeO$_{x}$ films and multilayer Ge/SiO$_{2}$ structures”, Fizika Tverdogo Tela, 59:5 (2017), 965–971   ; Phys. Solid State, 59:5 (2017), 992–998 |
| 2. |
S. Yu. Turishchev, V. A. Terekhov, D. A. Koyuda, A. V. Ershov, A. I. Mashin, E. V. Parinova, D. N. Nesterov, D. A. Grachev, I. A. Karabanova, È. P. Domashevskaya, “Formation of silicon nanocrystals in multilayer nanoperiodic $a$-SiO$_{x}$/insulator structures from the results of synchrotron investigations”, Fizika i Tekhnika Poluprovodnikov, 51:3 (2017), 363–366 ; Semiconductors, 51:3 (2017), 349–352 |
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2015 |
| 3. |
S. Yu. Turishchev, V. A. Terekhov, D. A. Koyuda, D. E. Spirin, E. V. Parinova, D. N. Nesterov, D. A. Grachev, I. A. Karabanova, A. V. Ershov, A. I. Mashin, È. P. Domashevskaya, “Formation of Si nanocrystals in multilayered nanoperiodic Al$_2$O$_3$/SiO$_x$/Al$_2$O$_3$/SiO$_x$/$\dots$/Si(100) structures: Synchrotron and photoluminescence data”, Fizika i Tekhnika Poluprovodnikov, 49:3 (2015), 421–425 ; Semiconductors, 49:3 (2015), 409–413 |
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2014 |
| 4. |
A. V. Ershov, D. A. Pavlov, D. A. Grachev, A. I. Bobrov, I. A. Karabanova, I. A. Chugrov, D. I. Tetelbaum, “Annealing-induced evolution of the structural and morphological properties of a multilayer nanoperiodic SiO$_x$/ZrO$_2$ system containing Si nanoclusters”, Fizika i Tekhnika Poluprovodnikov, 48:1 (2014), 44–48 ; Semiconductors, 48:1 (2014), 42–45 |
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