P. P. Konorov, A. M. Yafyasov and V. B. Bogevolnov.
Field-Effect in Semiconductor-electrolyte interface: Application to Investigations of Electronic Properties of the Semiconductor Surfaces. Princeton, Oxford University Press USA, 2006. ISBN 06911211761
A. M. Yafyasov, V. B. Bozhevol'nov, E. I. Ryumtsev, A. P. Kovshik, V. Yu. Mikhailovskii, “New mechanism of semiconductor polarization at the interface with an organic insulator”, Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 202–204; Semiconductors, 51:2 (2017), 193–195
2016
2.
B. Pavlov, A. Yafyasov, “Resonance scattering across the superlattice barrier and the dimensional quantization”, Nanosystems: Physics, Chemistry, Mathematics, 7:5 (2016), 816–834
3.
I. Yu. Popov, P. A. Kurasov, S. N. Naboko, A. A. Kiselev, A. E. Ryzhkov, A. M. Yafyasov, G. P. Miroshnichenko, Yu. E. Karpeshina, V. I. Kruglov, T. F. Pankratova, A. I. Popov, “A distinguished mathematical physicist Boris S. Pavlov”, Nanosystems: Physics, Chemistry, Mathematics, 7:5 (2016), 782–788
V. B. Bozhevol'nov, A. M. Yafyasov, V. Yu. Miailovskii, Yu. V. Egorova, A. A. Sokolov, E. O. Filatova, “Electrical properties of a SiC–Si multilayer structure”, Fizika i Tekhnika Poluprovodnikov, 48:6 (2014), 814–817; Semiconductors, 48:6 (2014), 792–795
5.
I. S. Dubitskiy, A. M. Yafyasov, “On the field effect in thin films of semiconductors with Kane’s charge-carrier dispersion relation”, Fizika i Tekhnika Poluprovodnikov, 48:3 (2014), 327–333; Semiconductors, 48:3 (2014), 312–319
G. N. Fursei, A. A. Kantonistov, M. A. Polyakov, A. M. Yafyasov, B. S. Pavlov, V. B. Bozhevol'nov, “Field and explosive emissions from graphene-like structures”, Zhurnal Tekhnicheskoi Fiziki, 83:6 (2013), 71–77; Tech. Phys., 58:6 (2013), 845–851
D. E. Tsurikov, A. M. Yafyasov, “Quantum self-consistent calculation of the differential capacitance of a semiconductor film”, Fizika i Tekhnika Poluprovodnikov, 47:9 (2013), 1169–1174; Semiconductors, 47:9 (2013), 1157–1163
D. E. Tsurikov, A. M. Yafyasov, “Logical element NOT in a two-dimensional electron waveguide”, Zhurnal Tekhnicheskoi Fiziki, 81:9 (2011), 12–15; Tech. Phys., 56:9 (2011), 1231–1234
N. Bagraev, G. Martin, B. S. Pavlov, A. Yafyasov, “Landau–Zener effect for a quasi-2D periodic sandwich”, Nanosystems: Physics, Chemistry, Mathematics, 2:4 (2011), 32–50
2010
10.
G. Martin, A. M. Yafyasov, B. S. Pavlov, “Resonance one-body scattering on a junction”, Nanosystems: Physics, Chemistry, Mathematics, 1:1 (2010), 108–147
1992
11.
A. M. Yafyasov, A. D. Perepelkin, V. B. Bozhevol'nov, “Study of band-structure parameters for (CdHg)Te and HgTe gapless semiconductor near-surface layers by the method of field effect in electrolytes”, Fizika i Tekhnika Poluprovodnikov, 26:4 (1992), 636–643
1991
12.
A. M. Yafyasov, V. B. Bozhevolnov, A. D. Perepelkin, “Электрофизические свойства слоистой структуры на основе (CdHg)Te
в системе полупроводник$-$электролит”, Fizika i Tekhnika Poluprovodnikov, 25:8 (1991), 1339–1343
13.
A. M. Yafyasov, A. D. Perepelkin, “Исследование скоростей заполнения квантовых подзон ОПЗ узкощелевых
полупроводников (CdHg)Te”, Fizika i Tekhnika Poluprovodnikov, 25:4 (1991), 748–750
14.
A. D. Perepelkin, A. M. Yafyasov, V. B. Bozhevolnov, “Исследование электрофизических параметров ОПЗ узкощелевых
полупроводников Cd$_{x}$Hg$_{1-x}$Te методом эффекта поля в электролите”, Fizika i Tekhnika Poluprovodnikov, 25:1 (1991), 156–159
1990
15.
A. M. Yafyasov, A. D. Perepelkin, Yu. N. Myasoedov, M. V. Matviiv, “Электрофизические свойства поверхности непрерывных твердых растворов
(MnHg)Te”, Fizika i Tekhnika Poluprovodnikov, 24:5 (1990), 875–878
1987
16.
A. M. Yafyasov, V. B. Bozhevolnov, A. D. Perepelkin, “Field Effect on a Gapless Semiconductor”, Fizika i Tekhnika Poluprovodnikov, 21:6 (1987), 1144–1147
17.
A. M. Yafyasov, V. B. Bozhevolnov, A. D. Pereplkin, “Study of Electron-State Density in Allowed Bands on (CdHg)Te Surface”, Fizika i Tekhnika Poluprovodnikov, 21:4 (1987), 633–637
1986
18.
V. V. Monakhov, A. M. Yafyasov, O. V. Romanov, “Determination of State Densities in Allowed Bands of Indium Antimonide and Lead Sulphide”, Fizika i Tekhnika Poluprovodnikov, 20:5 (1986), 954–957
1984
19.
V. Ya. Uritsky, O. V. Romanov, A. M. Yafyasov, “Characteristics of Si$-$SiO$_2$ Interface and Surface Hole Mobility in the Inversion Layer”, Fizika i Tekhnika Poluprovodnikov, 18:3 (1984), 393–397
1983
20.
M. V. Kapitonov, O. V. Romanov, A. M. Yafyasov, “Вырождение и непараболичность зон в измерениях поверхностных эффектов
на полупроводниках”, Fizika i Tekhnika Poluprovodnikov, 17:5 (1983), 818–823