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Publications in Math-Net.Ru |
Citations |
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2018 |
| 1. |
V. B. Odzaev, A. N. Pyatlitski, V. I. Plebanovich, P. K. Sadovskii, M. I. Tarasik, A. R. Chelyadinskii, “Interaction between antimony atoms and micropores in silicon”, Fizika Tverdogo Tela, 60:1 (2018), 22–24   ; Phys. Solid State, 60:1 (2018), 20–22 |
1
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2013 |
| 2. |
P. K. Sadovskii, A. R. Chelyadinskii, V. B. Odzaev, M. I. Tarasik, A. S. Turtsevich, Yu. B. Vasil'ev, “Getter formation in silicon by implantation of antimony ions”, Fizika Tverdogo Tela, 55:6 (2013), 1071–1073 ; Phys. Solid State, 55:6 (2013), 1156–1158 |
4
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| 3. |
M. Jadan, A. R. Chelyadinskii, V. B. Odzaev, “Localization of carbon atoms and extended defects in silicon implanted separately with C$^+$ and B$^+$ ions and jointly with C$^+$ and B$^+$ ions”, Fizika Tverdogo Tela, 55:2 (2013), 243–246 ; Phys. Solid State, 55:2 (2013), 278–281 |
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2003 |
| 4. |
A. R. Chelyadinskii, F. F. Komarov, “Defect-impurity engineering in implanted silicon”, UFN, 173:8 (2003), 813–846 ; Phys. Usp., 46:8 (2003), 789–820  |
36
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1995 |
| 5. |
V. S. Vavilov, A. R. Chelyadinskii, “Impurity ion implantation into silicon single crystals: efficiency and radiation damage”, UFN, 165:3 (1995), 347–358 ; Phys. Usp., 38:3 (1995), 333–343 |
21
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1991 |
| 6. |
V. S. Varichenko, A. M. Zaitsev, N. A. Kudelevich, A. R. Chelyadinskii, “Spatial distribution, accumulation and annealing of radiation defects created in silicon by energetic argon and nickel ions”, Fizika Tverdogo Tela, 33:12 (1991), 3552–3555 |
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