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Publications in Math-Net.Ru |
Citations |
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2019 |
| 1. |
E. M. Trukhanov, S. A. Teys, “An unusual mechanism of misfit stress relaxation in thin nanofilms”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:22 (2019), 28–31   ; Tech. Phys. Lett., 45:11 (2019), 1144–1147 |
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2018 |
| 2. |
A. S. Deryabin, L. V. Sokolov, E. M. Trukhanov, K. B. Fritzler, “The reliability of revealing threading dislocations in epitaxial films by structure-sensitive etching”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:20 (2018), 30–36 ; Tech. Phys. Lett., 44:10 (2018), 916–918 |
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| 3. |
I. D. Loshkarev, A. P. Vasilenko, E. M. Trukhanov, A. V. Kolesnikov, M. O. Petrushkov, M. A. Putyato, “X-ray diffraction analysis of epitaxial layers with the properties of a dislocation filter”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:13 (2018), 19–27 ; Tech. Phys. Lett., 44:7 (2018), 562–565 |
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2017 |
| 4. |
I. D. Loshkarev, A. P. Vasilenko, E. M. Trukhanov, A. V. Kolesnikov, M. A. Putyato, M. Yu. Yesin, M. O. Petrushkov, “The structural state of epitaxial GaP films of different polarities grown on misoriented Si(001) substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:4 (2017), 64–71 ; Tech. Phys. Lett., 43:2 (2017), 213–215 |
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2015 |
| 5. |
Yu. G. Sidorov, M. V. Yakushev, V. S. Varavin, A. V. Kolesnikov, E. M. Trukhanov, I. V. Sabinina, I. D. Loshkarev, “Density of dislocations in CdHgTe heteroepitaxial structures on GaAs(013) and Si(013) substrates”, Fizika Tverdogo Tela, 57:11 (2015), 2095–2101 ; Phys. Solid State, 57:11 (2015), 2151–2158 |
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| 6. |
K. B. Fritzler, E. M. Trukhanov, V. V. Kalinin, “Morphology and structural and electrical parameters of float-zone Si(111) single crystals”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:15 (2015), 33–39 ; Tech. Phys. Lett., 41:8 (2015), 731–733 |
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2010 |
| 7. |
S. A. Teys, E. M. Trukhanov, A. S. Il'in, A. K. Gutakovskii, A. V. Kolesnikov, “Initial stages of Ge epitaxy on Si(111) under quasi-equilibrium growth conditions”, Pis'ma v Zh. Èksper. Teoret. Fiz., 92:6 (2010), 429–437 ; JETP Letters, 92:6 (2010), 388–395   |
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