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Publications in Math-Net.Ru |
Citations |
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2019 |
| 1. |
A. M. Pashaev, B. H. Tagiev, O. B. Tagiyev, V. T. Majidova, I. Z. Sadikhov, “Influence of electric field on the activation energy of local levels in semiconductors with layered (GaSe) and cubic (Ga$_{2}$Se$_{3}$) structures”, Fizika i Tekhnika Poluprovodnikov, 53:2 (2019), 221–225   ; Semiconductors, 53:2 (2019), 210–214 |
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2017 |
| 2. |
B. H. Tagiev, O. B. Tagiyev, “Electrical conductivity in single crystals of GaSe$_{x}$Te$_{1-x}$ solid solutions in strong electrical fields”, Fizika Tverdogo Tela, 59:6 (2017), 1060–1064 ; Phys. Solid State, 59:6 (2017), 1080–1084 |
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2013 |
| 3. |
A. M. Pashaev, B. H. Tagiev, O. B. Tagiyev, “Poole–Frenkel effect in chalcogenide semiconductors with various crystalline structures”, Fizika Tverdogo Tela, 55:5 (2013), 861–865 ; Phys. Solid State, 55:5 (2013), 937–942 |
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2012 |
| 4. |
B. H. Tagiev, T. G. Kerimova, O. B. Tagiyev, S. G. Asadullayeva, I. A. Mamedova, “Optical transitions in MnGa$_2$Se$_4$”, Fizika i Tekhnika Poluprovodnikov, 46:6 (2012), 725–727 ; Semiconductors, 46:6 (2012), 705–707 |
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| 5. |
B. H. Tagiev, O. V. Tagiev, S. G. Asadullayeva, Q. Y. Eyyubov, “Current-voltage characteristics of MnGa$_2$Se$_4$ single crystals”, Fizika i Tekhnika Poluprovodnikov, 46:6 (2012), 721–724 ; Semiconductors, 46:6 (2012), 701–704 |
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| 6. |
B. H. Tagiev, O. V. Tagiev, S. G. Asadullayeva, Q. Y. Eyyubov, “Current-voltage characteristics of MnGa$_2$Se$_4$ single crystals”, Fizika i Tekhnika Poluprovodnikov, 46:3 (2012), 334–337 ; Semiconductors, 46:3 (2012), 319–322 |
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1991 |
| 7. |
I. M. Askerov, F. Sh. Aidaev, G. K. Aslanov, V. F. Masterov, B. H. Tagiev, “Люминесценция примесных центров Eu и Mn в монокристаллах
Ga$_{2}$S$_{3}$(Se$_{3}$)”, Fizika i Tekhnika Poluprovodnikov, 25:11 (1991), 2042–2044 |
| 8. |
B. H. Tagiev, O. B. Tagiev, G. A. Kasimova, “Инжекционные токи и термополевой эффект Пула$-$Френкеля
в монокристаллах твердых растворов
(Ga$_{2}$S$_{3}$)$_{1-x}$(Eu$_{2}$O$_{3}$)$_{x}$”, Fizika i Tekhnika Poluprovodnikov, 25:11 (1991), 1877–1882 |
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1989 |
| 9. |
I. M. Askerov, G. K. Aslanov, F. S. Nasredinov, B. H. Tagiev, “Дефектные полупроводники Ga$_{2}$S$_{3}$ и Ga$_{2}$Se$_{3}$,
легированные железом”, Fizika i Tekhnika Poluprovodnikov, 23:6 (1989), 1083–1087 |
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1986 |
| 10. |
B. H. Tagiev, F. Sh. Aidaev, “Electroluminescence and Injection Currents in GaS : Ho Single Crystals”, Fizika i Tekhnika Poluprovodnikov, 20:4 (1986), 723–726 |
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1985 |
| 11. |
G. A. Smolenskii, L. S. Stilbans, É. M. Sher, M. M. Akperov, B. G. Tagiev, T. T. Tokarbaev, K. Z. Kobakhidze, “On the use of Peltier effect for the control of ferroelectric and magnetic phase transitions”, Dokl. Akad. Nauk SSSR, 280:3 (1985), 601–604 |
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1984 |
| 12. |
B. H. Tagiev, S. A. Abushov, G. M. Niftiev, “Электролюминесценция монокристаллов
GaS$\langle$Yb$\rangle$”, Fizika i Tekhnika Poluprovodnikov, 18:10 (1984), 1904–1906 |
| 13. |
B. H. Tagiev, G. M. Mamedov, E. F. Bagirzade, N. D. Mamedov, B. Z. Aliev, M. B. Dzhafarov, “Thermofield Quenching of Exciton Photoconduction
in GaSe$\langle\text{Ge}\rangle$”, Fizika i Tekhnika Poluprovodnikov, 18:6 (1984), 1043–1045 |
| 14. |
H. M. Abdullaev, S. A. Abushov, Ch. M. Briskina, V. F. Zolin, V. M. Markushev, G. M. Niftiev, B. H. Tagiev, “Photoluminescence and electroluminescence of neodymium in GaSe single crystals”, Kvantovaya Elektronika, 11:3 (1984), 605–608 [Sov J Quantum Electron, 14:3 (1984), 410–412  ] |
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1983 |
| 15. |
B. H. Tagiev, G. M. Niftiev, S. M. Bashirov, “Термостимулированная проводимость в монокристаллах
GaSe$\langle\text{Ni}\rangle$”, Fizika i Tekhnika Poluprovodnikov, 17:7 (1983), 1320–1322 |
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