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Publications in Math-Net.Ru |
Citations |
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2018 |
| 1. |
V. B. Kulikov, D. V. Maslov, A. R. Sabirov, A. A. Solodkov, A. L. Dudin, N. I. Katsavets, I. V. Kogan, I. V. Shukov, V. P. Chalyi, “NBn-photodiode based on InAsSb/AlAsSb alloys with a long-wavelength cutoff of 5 $\mu$m”, Fizika i Tekhnika Poluprovodnikov, 52:13 (2018), 1636–1640   ; Semiconductors, 52:13 (2018), 1743–1747 |
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2015 |
| 2. |
A. N. Alekseev, D. M. Krasovitsky, S. I. Petrov, V. P. Chalyi, V. V. Mamaev, V. G. Sidorov, “Specific features of NH$_3$ and plasma-assisted MBE in the fabrication of III-N HEMT heterostructures”, Fizika i Tekhnika Poluprovodnikov, 49:1 (2015), 94–97 ; Semiconductors, 49:1 (2015), 92–94 |
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2014 |
| 3. |
V. B. Kulikov, V. P. Chalyi, “Photosensitivity of structures with quantum wells under normal radiation incidence”, Fizika i Tekhnika Poluprovodnikov, 48:2 (2014), 225–228 ; Semiconductors, 48:2 (2014), 212–215 |
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2012 |
| 4. |
A. N. Alekseev, D. M. Krasovitsky, S. I. Petrov, V. P. Chalyi, “Deposition of GaN Layers with a lowered dislocation density by molecular-beam epitaxy”, Fizika i Tekhnika Poluprovodnikov, 46:11 (2012), 1460–1462 ; Semiconductors, 46:11 (2012), 1429–1431 |
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| 5. |
O. F. Butyagin, N. I. Katsavets, I. V. Kogan, D. M. Krasovitsky, V. B. Kulikov, V. P. Chalyi, A. L. Dudin, O. B. Cherednichenko, “AlGaAs/GaAs multiquantum-well heterostructures for long-wavelength (8–10 $\mu$m) IR photodetectors”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:9 (2012), 81–87 ; Tech. Phys. Lett., 38:5 (2012), 436–438 |
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1998 |
| 6. |
D. M. Demidov, N. I. Katsavets, A. L. Ter-Martirosyan, V. P. Chalyi, “Powerful highly stable laser diodes for pumping of solid-state lasers”, Kvantovaya Elektronika, 25:9 (1998), 789–791 [Quantum Electron., 28:9 (1998), 768–770  ] |
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1984 |
| 7. |
D. Z. Garbuzov, V. V. Agaev, Z. N. Sokolova, V. B. Khalfin, V. P. Chalyi, “Recombination Processes in InGaAsP/InP Double Heterostructures
with ${\lambda= 1\div1.5} \mu m$”, Fizika i Tekhnika Poluprovodnikov, 18:6 (1984), 1069–1076 |
| 8. |
D. Z. Garbuzov, A. V. Chudinov, V. V. Agaev, V. P. Chalyi, V. P. Evtikhiev, “Luminescent and Threshold Characteristics of InGaAsP/InP Double Heterostructures (${0.94\mu m<\lambda<1.51 \mu m}$) under
Optical Excitation”, Fizika i Tekhnika Poluprovodnikov, 18:1 (1984), 102–108 |
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| Organisations |
- "Semiconductor Devices" (private company), St Petersburg
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