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Публикации в базе данных Math-Net.Ru |
Цитирования |
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2012 |
| 1. |
V. V. Emtsev, A. M. Ivanov, V. V. Kozlovski, A. A. Lebedev, G. A. Oganesyan, N. B. Strokan, G. Wagner, “Similarities and distinctions of defect production by fast electron and proton irradiation: moderately doped silicon and silicon carbide of $n$-type”, Физика и техника полупроводников, 46:4 (2012), 473–481   ; Semiconductors, 46:4 (2012), 456–465 |
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