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Publications in Math-Net.Ru |
Citations |
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2017 |
| 1. |
Igor A. Tambasov, Viktor G. Myagkov, Alexander A. Ivanenko, Mikhail N. Volochaev, Anton S. Voronin, Fedor S. Ivanchenko, Ekaterina V. Tambasova, “Temperature-dependent photoconductance and optical properties of In$_2$O$_3$ thin films prepared by autowave oxidation”, J. Sib. Fed. Univ. Math. Phys., 10:4 (2017), 399–409   |
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2016 |
| 2. |
Yu. V. Gerasimova, S. N. Sofronova, I. A. Gudim, A. S. Oreshonkov, A. N. Vtyurin, A. A. Ivanenko, “Infrared absorption spectra of a Nd$_{0.5}$Ho$_{0.5}$Fe$_{3}$(BO$_{3}$)$_{4}$”, Fizika Tverdogo Tela, 58:1 (2016), 149–153  ; Phys. Solid State, 58:1 (2016), 155–159 |
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2014 |
| 3. |
Yu. V. Gerasimova, A. S. Oreshonkov, A. A. Ivanenko, M. S. Molokeev, L. I. Isaenko, I. N. Flerov, E. V. Bogdanov, M. V. Gorev, A. V. Kartashev, A. S. Krylov, “Structural, spectroscopic, and thermophysical investigations of the oxyfluorides CsZnMoO$_3$F$_3$ and CsMnMoO$_3$F$_3$ with the pyrochlore structure”, Fizika Tverdogo Tela, 56:3 (2014), 577–582 ; Phys. Solid State, 56:3 (2014), 599–605 |
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| 4. |
I. A. Tambasov, V. G. Myagkov, A. A. Ivanenko, L. E. Bykova, E. V. Yozhikova, I. A. Maksimov, V. V. Ivanov, “Effect of exposure to optical radiation and temperature on the electrical and optical properties of In$_2$O$_3$ films produced by autowave oxidation”, Fizika i Tekhnika Poluprovodnikov, 48:2 (2014), 220–224 ; Semiconductors, 48:2 (2014), 207–211 |
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2013 |
| 5. |
Yu. V. Gerasimova, A. S. Oreshonkov, A. N. Vtyurin, A. A. Ivanenko, L. I. Isaenko, A. A. Ershov, E. I. Pogoreltsev, “Infrared absorption investigation of the role of octahedral groups upon the phase transition in the Rb$_2$KMoO$_3$F$_3$ crystal”, Fizika Tverdogo Tela, 55:11 (2013), 2215–2217 ; Phys. Solid State, 55:11 (2013), 2331–2334 |
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| 6. |
I. A. Tambasov, V. G. Myagkov, A. A. Ivanenko, I. V. Nemtsev, L. E. Bykova, G. N. Bondarenko, Yu. L. Mikhlin, I. A. Maksimov, V. V. Ivanov, S. V. Balashov, D. S. Karpenko, “Structural and optical properties of thin In$_2$O$_3$ films produced by autowave oxidation”, Fizika i Tekhnika Poluprovodnikov, 47:4 (2013), 546–550 ; Semiconductors, 47:4 (2013), 569–573 |
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