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Publications in Math-Net.Ru |
Citations |
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2016 |
| 1. |
M. I. Vexler, G. G. Kareva, Yu. Yu. Illarionov, I. V. Grekhov, “Resonant electron tunneling and related charging phenomena in metal–oxide–$p^+$-Si nanostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:21 (2016), 62–69   ; Tech. Phys. Lett., 42:11 (2016), 1090–1093 |
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2014 |
| 2. |
G. G. Kareva, M. I. Vexler, “$p^+$-Si/nano-SiO$_2$/$n^+$-Si capacitor-based tunnel diode with negative differential resistance and a quartz resonator”, Fizika i Tekhnika Poluprovodnikov, 48:10 (2014), 1416–1420 ; Semiconductors, 48:10 (2014), 1381–1384 |
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2013 |
| 3. |
G. G. Kareva, M. I. Vexler, “Electrical phenomena in a metal/nanooxide/$p^+$-silicon structure during its transformation to a resonant-tunneling diode”, Fizika i Tekhnika Poluprovodnikov, 47:8 (2013), 1087–1093 ; Semiconductors, 47:8 (2013), 1084–1089 |
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1986 |
| 4. |
G. G. Kareva, “Spectral Characteristics ol Photoemission from Silicon into Silicon Dioxide in MDS Structure”, Fizika i Tekhnika Poluprovodnikov, 20:2 (1986), 339–342 |
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1983 |
| 5. |
G. G. Kareva, P. P. Konorov, “Снижение порога фотоэмиссии
из полупроводника”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:3 (1983), 143–147 |
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