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Publications in Math-Net.Ru |
Citations |
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2017 |
| 1. |
V. V. Voronenkov, M. V. Virko, V. S. Kogotkov, A. A. Leonidov, A. V. Pinchuk, A. S. Zubrilov, R. I. Gorbunov, F. E. Latyshev, N. I. Bochkareva, Yu. S. Lelikov, D. V. Tarkhin, A. N. Smirnov, V. Yu. Davydov, I. A. Sheremet, Yu. G. Shreter, “On the laser lift-off of lightly doped micrometer-thick $n$-GaN films from substrates via the absorption of IR radiation in sapphire”, Fizika i Tekhnika Poluprovodnikov, 51:1 (2017), 116–123   ; Semiconductors, 51:1 (2017), 115–121 |
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2016 |
| 2. |
M. V. Virko, V. S. Kogotkov, A. A. Leonidov, V. V. Voronenkov, Yu. T. Rebane, A. S. Zubrilov, R. I. Gorbunov, F. E. Latyshev, N. I. Bochkareva, Yu. S. Lelikov, D. V. Tarkhin, A. N. Smirnov, V. Yu. Davydov, Yu. G. Shreter, “On the laser detachment of $n$-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in $n^+$-GaN substrates”, Fizika i Tekhnika Poluprovodnikov, 50:5 (2016), 711–716 ; Semiconductors, 50:5 (2016), 699–704 |
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2012 |
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N. I. Bochkareva, V. V. Voronenkov, R. I. Gorbunov, A. S. Zubrilov, F. E. Latyshev, Yu. S. Lelikov, Yu. T. Rebane, A. I. Tsyuk, Yu. G. Shreter, “Effect of localized tail states in InGaN on the efficiency droop in GaN light-emitting diodes with increasing current density”, Fizika i Tekhnika Poluprovodnikov, 46:8 (2012), 1054–1062 ; Semiconductors, 46:8 (2012), 1032–1039 |
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1991 |
| 4. |
A. S. Zubrilov, S. V. Koveshnikov, “Влияние примесного состава $n$-Si на радиационное дефектообразование
и деградацию времени жизни неосновных носителей заряда
при $\gamma$-облучении”, Fizika i Tekhnika Poluprovodnikov, 25:8 (1991), 1332–1338 |
| 5. |
M. M. Anikin, A. S. Zubrilov, A. A. Lebedev, A. P. Strelchuk, A. E. Cherenkov, “Рекомбинационные процессы в $6H$-SiC $p{-}n$-структурах
и влияние на них глубоких центров”, Fizika i Tekhnika Poluprovodnikov, 25:3 (1991), 479–486 |
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1989 |
| 6. |
A. S. Zubrilov, O. A. Kotin, V. B. Shuman, “Однородный лавинный пробой в кремниевых диодах”, Fizika i Tekhnika Poluprovodnikov, 23:4 (1989), 607–611 |
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1987 |
| 7. |
A. S. Zubrilov, V. B. Shuman, “AVALANCHE BREAKDOWN UNDER HIGH-CURRENT DENSITIES”, Zhurnal Tekhnicheskoi Fiziki, 57:9 (1987), 1843–1845 |
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1986 |
| 8. |
A. S. Zubrilov, V. A. Kuz'min, T. T. Мnatsakanov, L. I. Pomortseva, V. B. Shuman, “Effect of Radiation-Induced Defects on Current-Voltage Characteristic of Silicon Multilayer Structures”, Fizika i Tekhnika Poluprovodnikov, 20:3 (1986), 532–534 |
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1983 |
| 9. |
A. S. Zubrilov, V. A. Kuz'min, T. T. Мnatsakanov, L. I. Pomortseva, V. B. Shuman, “Исследование влияния оже-рекомбинации на вольтамперную характеристику
кремниевых многослойных структур”, Fizika i Tekhnika Poluprovodnikov, 17:3 (1983), 474–478 |
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