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Publications in Math-Net.Ru |
Citations |
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2024 |
| 1. |
A. S. Puzanov, I. Yu. Zabavichev, N. D. Abrosimova, V. V. Bibikova, E. V. Volkova, A. D. Nedoshivina, A. A. Potekhin, E. A. Tarasova, S. V. Khazanova, B. A. Loginov, D. Yu. Blinnikov, V. S. Vtorova, E. A. Lyashko, V. V. Kirillova, V. S. Makeev, A. R. Pervykh, S. V. Obolensky, “Fluctuation analysis of the surface microrelief of silicon-on-insulator structures after radiation exposure”, Fizika i Tekhnika Poluprovodnikov, 58:12 (2024), 668–675   |
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2023 |
| 2. |
B. A. Loginov, D. Yu. Blinnikov, V. S. Vtorova, V. V. Kirillova, E. A. Lyashko, V. S. Makeev, A. R. Pervykh, N. D. Abrosimova, I. Yu. Zabavichev, A. S. Puzanov, E. V. Volkova, E. A. Tarasova, S. V. Obolensky, “Silicon-on-insulator structures microtopography transformations features after photonic and corpuscular radiation exposure”, Zhurnal Tekhnicheskoi Fiziki, 93:7 (2023), 1025–1031 |
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2022 |
| 3. |
E. A. Tarasova, S. V. Khazanova, O. L. Golikov, A. S. Puzanov, S. V. Obolenskiy, V. E. Zemlyakov, “Analysis of nonlinear distortions of D$p$HEMT structures based on the GaAs/InGaAs compound with double-sided delta-doping”, Fizika i Tekhnika Poluprovodnikov, 56:9 (2022), 844–847 |
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2021 |
| 4. |
E. A. Tarasova, S. V. Khazanova, O. L. Golikov, A. S. Puzanov, S. V. Obolensky, V. E. Zemlyakov, “Analysis of the effect of spacer layers on nonlinear distortions of the current–voltage characteristics of GaAlAs/InGaAs pHEMTs”, Fizika i Tekhnika Poluprovodnikov, 55:10 (2021), 872–876 ; Semiconductors, 55:12 (2021), 895–898 |
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| 5. |
E. V. Volkova, A. B. Loginov, B. A. Loginov, E. A. Tarasova, A. S. Puzanov, S. A. Korolev, E. S. Semyonovykh, S. V. Khazanova, S. V. Obolensky, “Experimental studies of modification of the characteristics of GaAs structures with Schottky contacts after exposure to fast neutrons”, Fizika i Tekhnika Poluprovodnikov, 55:10 (2021), 846–849 ; Semiconductors, 55:12 (2021), 903–906 |
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| 6. |
A. S. Puzanov, V. V. Bibikova, I. Yu. Zabavichev, E. S. Obolenskaya, A. A. Potekhin, E. A. Tarasova, N. V. Vostokov, V. A. Kozlov, S. V. Obolensky, “Modeling the response of a microwave low-barrier uncooled Mott diode to the action of heavy ions of outer space and femtosecond laser pulses”, Fizika i Tekhnika Poluprovodnikov, 55:9 (2021), 743–747 ; Semiconductors, 55:10 (2021), 780–784 |
| 7. |
A. S. Puzanov, V. V. Bibikova, I. Yu. Zabavichev, E. S. Obolenskaya, E. A. Tarasova, N. V. Vostokov, S. V. Obolensky, “Simulation of the response of a low-barrier Mott diode to the influence of heavy charged particles from outer space”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:6 (2021), 51–54 ; Tech. Phys. Lett., 47:4 (2021), 305–308 |
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| 8. |
S. V. Obolensky, E. V. Volkova, A. B. Loginov, B. A. Loginov, E. A. Tarasova, A. S. Puzanov, S. A. Korolev, “A comprehensive study of radiation defect clusters in GaAs structures after neutron irradiation”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:5 (2021), 38–41 ; Tech. Phys. Lett., 47:3 (2021), 248–251 |
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2020 |
| 9. |
E. A. Tarasova, S. V. Obolensky, S. V. Khazanova, N. N. Grigoryeva, O. L. Golikov, A. B. Ivanov, A. S. Puzanov, “Compensation for the nonlinearity of the drain–gate I–V characteristic in field-effect transistors with a gate length of $\sim$100 nm”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 968–973 ; Semiconductors, 54:9 (2020), 1155–1160 |
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2018 |
| 10. |
M. M. Venediktov, E. A. Tarasova, A. D. Bozhen'kina, S. V. Obolensky, V. V. Elesin, G. V. Chukov, I. O. Metelkin, M. A. Krevskiy, D. I. Dyukov, A. G. Fefelov, “Analysis of the behavior of nonequilibrium semiconductor structures and microwave transistors during and after pulsed $\gamma$- and $\gamma$-neutron irradiation”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1414–1420 ; Semiconductors, 52:12 (2018), 1518–1524 |
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2017 |
| 11. |
E. A. Tarasova, S. V. Obolensky, O. E. Galkin, A. V. Hananova, A. B. Makarov, “Analysis of the GaN-HEMT parameters before and after gamma-neutron irradiation”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1543–1546 ; Semiconductors, 51:11 (2017), 1490–1494 |
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2016 |
| 12. |
E. S. Obolenskaya, E. A. Tarasova, A. Yu. Churin, S. V. Obolensky, V. A. Kozlov, “Microwave-signal generation in a planar Gunn diode with radiation exposure taken into account”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1605–1609 ; Semiconductors, 50:12 (2016), 1579–1583 |
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| 13. |
E. A. Tarasova, E. S. Obolenskaya, A. V. Hananova, S. V. Obolensky, V. E. Zemlyakov, V. I. Egorkin, A. V. Nezhentsev, A. V. Sakharov, A. F. Tsatsul'nikov, V. V. Lundin, E. E. Zavarin, G. V. Medvedev, “Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1599–1604 ; Semiconductors, 50:12 (2016), 1574–1578 |
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| 14. |
E. A. Tarasova, A. V. Hananova, S. V. Obolensky, V. E. Zemlyakov, Yu. N. Sveshnikov, V. I. Egorkin, V. A. Ivanov, G. V. Medvedev, D. S. Smotrin, “Study of the electron distribution in GaN and GaAs after $\gamma$-neutron irradiation”, Fizika i Tekhnika Poluprovodnikov, 50:3 (2016), 331–338 ; Semiconductors, 50:3 (2016), 326–333 |
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2012 |
| 15. |
E. A. Tarasova, D. S. Demidova, S. V. Obolensky, A. G. Fefelov, D. I. Dyukov, “Modeling of powerful HEMT under high energy radiation”, Fizika i Tekhnika Poluprovodnikov, 46:12 (2012), 1587–1592 |
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