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Publications in Math-Net.Ru |
Citations |
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2025 |
| 1. |
A. A. Grekova, E. A. Klimov, A. N. Vinichenko, I. D. Burlakov, “Influence of tellurium and zinc stoichiometry on the ellipsometric spectra of ZnTe/GaAs (100)”, Optics and Spectroscopy, 133:3 (2025), 274–280 |
| 2. |
E. A. Klimov, A. N. Vinichenko, I. S. Vasil'evskii, A. N. Klochkov, S. S. Pushkarev, I. D. Burlakov, “Temperature influence on the crystal structure of CdTe(111) films grown by molecular-beam epitaxy on GaAs(100) substrates”, Fizika i Tekhnika Poluprovodnikov, 59:3 (2025), 141–149 |
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2021 |
| 3. |
R. A. Khabibullin, K. V. Marem'yanin, D. S. Ponomarev, R. R. Galiev, A. A. Zaitsev, A. I. Danilov, I. S. Vasil'evskii, A. N. Vinichenko, A. N. Klochkov, A. A. Afonenko, D. V. Ushakov, S. V. Morozov, V. I. Gavrilenko, “3.3 THz quantum cascade laser based on a three GaAs/AlGaAs quantum-well active module with an operating temperature above 120 K”, Fizika i Tekhnika Poluprovodnikov, 55:11 (2021), 989–994 |
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2020 |
| 4. |
A. N. Klochkov, E. A. Klimov, P. M. Solyankin, M. R. Konnikova, I. S. Vasil'evskii, A. N. Vinichenko, A. P. Shkurinov, G. B. Galiev, “Thz radiation of photoconductive antennas based on $\{$LT-GaAs/GaAs:Si$\}$ superlattice structures”, Optics and Spectroscopy, 128:7 (2020), 1004–1011 ; Optics and Spectroscopy, 128:7 (2020), 1010–1017 |
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2019 |
| 5. |
A. N. Vinichenko, D. A. Safonov, N. I. Kargin, I. S. Vasil'evskii, “Electron-quantum transport in pseudomorphic and metamorphic In$_{0.2}$Ga$_{0.8}$As-based quantum wells”, Fizika i Tekhnika Poluprovodnikov, 53:3 (2019), 359–364 ; Semiconductors, 53:3 (2019), 339–344 |
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2018 |
| 6. |
S. V. Gudina, Yu. G. Arapov, E. V. Ilchenko, V. N. Neverov, A. P. Savelyev, S. M. Podgornykh, N. G. Shelushinina, M. V. Yakunin, I. S. Vasil'evskii, A. N. Vinichenko, “Nonuniversal scaling behavior of conductivity peak widths in the quantum Hall effect in InGaAs/InAlAs structures”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1447–1454 ; Semiconductors, 52:12 (2018), 1551–1558 |
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| 7. |
I. V. Altukhov, S. E. Dizhur, M. S. Kagan, N. A. Khval'kovskiy, S. K. Paprotskiy, I. S. Vasil'evskii, A. N. Vinichenko, “Transport in short-period GaAs/AlAs superlattices with electric domains”, Fizika i Tekhnika Poluprovodnikov, 52:4 (2018), 472 ; Semiconductors, 52:4 (2018), 473–477 |
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| 8. |
D. A. Safonov, A. N. Vinichenko, N. I. Kargin, I. S. Vasil'evskii, “Electron transport in phemt AlGaAs/InGaAs/GaAs ÐÍÅÌÒ quantum wells at different temperatures: influence of one-side $\delta$-Si doping”, Fizika i Tekhnika Poluprovodnikov, 52:2 (2018), 201–206 ; Semiconductors, 52:2 (2018), 189–194 |
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| 9. |
D. A. Safonov, A. N. Vinichenko, N. I. Kargin, I. S. Vasil'evskii, “Electron effective mass and momentum relaxation time in one-sided $\delta$-doped PHEMT AlGaAs/InGaAs/GaAs quantum wells with high electron density”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:24 (2018), 120–127 ; Tech. Phys. Lett., 44:12 (2018), 1174–1176 |
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| 10. |
D. A. Safonov, A. N. Vinichenko, N. I. Kargin, I. S. Vasil'evskii, “Peculiarities of silicon-donor ionization and electron scattering in pseudomorphous AlGaAs/InGaAs/GaAs quantum wells with heavy unilateral $\delta$-doping”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:4 (2018), 34–41 ; Tech. Phys. Lett., 44:2 (2018), 145–148 |
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| 11. |
S. A. Nomoev, I. S. Vasil'evskii, A. N. Vinichenko, K. I. Kozlovskii, A. A. Chistyakov, E. D. Mishina, D. I. Khusyainov, A. M. Buryakov, “The influence of the annealing regime on the properties of terahertz antennas based on low-temperature-grown gallium arsenide”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:2 (2018), 11–17 ; Tech. Phys. Lett., 44:1 (2018), 44–46 |
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2017 |
| 12. |
G. B. Galiev, A. N. Klochkov, I. S. Vasil'evskii, E. A. Klimov, S. S. Pushkarev, A. N. Vinichenko, R. A. Khabibullin, P. P. Maltsev, “Electron properties of surface InGaAs/InAlAs quantum wells with inverted doping on InP substrates”, Fizika i Tekhnika Poluprovodnikov, 51:6 (2017), 792–797 ; Semiconductors, 51:6 (2017), 760–765 |
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2016 |
| 13. |
S. V. Gudina, Yu. G. Arapov, A. P. Savelyev, V. N. Neverov, S. M. Podgornykh, N. G. Shelushinina, M. V. Yakunin, I. S. Vasil'evskii, A. N. Vinichenko, “Quantum Hall effect and hopping conductivity in $n$-InGaAs/InAlAs nanoheterostructures”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1669–1674 ; Semiconductors, 50:12 (2016), 1641–1646 |
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| 14. |
I. S. Vasil'evskii, S. S. Pushkarev, M. M. Grekhov, A. N. Vinichenko, D. V. Lavrukhin, O. S. Kolentsova, “Features of the diagnostics of metamorphic InAlAs/InGaAs/InAlAs nanoheterostructures by high-resolution X-ray diffraction in the $\omega$-scanning mode”, Fizika i Tekhnika Poluprovodnikov, 50:4 (2016), 567–573 ; Semiconductors, 50:4 (2016), 559–565 |
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2015 |
| 15. |
Yu. D. Sibirmovsky, I. S. Vasil'evskii, A. N. Vinichenko, I. S. Eremin, D. M. Zhigunov, N. I. Kargin, O. S. Kolentsova, P. A. Martyuk, M. N. Strikhanov, “Photoluminescence of GaAs/AlGaAs quantum ring arrays”, Fizika i Tekhnika Poluprovodnikov, 49:5 (2015), 652–657 ; Semiconductors, 49:5 (2015), 638–643 |
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2014 |
| 16. |
A. N. Vinichenko, V. P. Gladkov, N. I. Kargin, M. N. Strikhanov, I. S. Vasil'evskii, “Increase of the electron mobility in HEMT heterostructures with composite spacers containing AlAs nanolayers”, Fizika i Tekhnika Poluprovodnikov, 48:12 (2014), 1660–1665 ; Semiconductors, 48:12 (2014), 1619–1625 |
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| 17. |
I. S. Vasil'evskii, A. N. Vinichenko, M. M. Grekhov, V. P. Gladkov, N. I. Kargin, M. N. Strikhanov, “Technology and electronic properties of PHEMT AlGaAs/In$_{y(z)}$Ga$_{1-y(z)}$As/GaAs compositionally graded quantum wells”, Fizika i Tekhnika Poluprovodnikov, 48:9 (2014), 1258–1264 ; Semiconductors, 1226–1232 |
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