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Publications in Math-Net.Ru |
Citations |
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2024 |
| 1. |
V. G. Mansurov, T. V. Malin, D. D. Bashkatov, D. S. Milakhin, K. S. Zhuravlev, “Chemical kinetics of the Si(111) surface nitridation process at temperatures below the structural phase transition (7$\times$7)$\to$(1$\times$1)”, Fizika i Tekhnika Poluprovodnikov, 58:7 (2024), 349–357   |
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2022 |
| 2. |
D. S. Milakhin, T. V. Malin, V. G. Mansurov, A. S. Kozhukhov, N. N. Novikova, V. A. Yakovlev, K. S. Zhuravlev, “Determination of the AlN nucleation layer thickness formed on the Al$_2$O$_3$ (0001) surface during nitridation process
by XPS and IR spectroscopy”, Fizika i Tekhnika Poluprovodnikov, 56:8 (2022), 734–741 |
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2019 |
| 3. |
D. S. Milakhin, T. V. Malin, V. G. Mansurov, Yu. G. Galitsyn, A. S. Kozhukhov, I. A. Aleksandrov, N. V. Rzheutskii, E. V. Lebiadok, A. A. Razumets, K. S. Zhuravlev, “Forming the GaN nanocrystals on the graphene-like $g$-AlN and $g$-Si$_{3}$N$_{3}$ surface”, Fizika Tverdogo Tela, 61:12 (2019), 2327–2332 ; Phys. Solid State, 61:12 (2019), 2329–2334 |
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| 4. |
T. V. Malin, D. S. Milakhin, I. A. Aleksandrov, V. E. Zemlyakov, V. I. Egorkin, A. A. Zaitsev, D. Yu. Protasov, A. S. Kozhukhov, B. Ya. Ber, D. Yu. Kazantsev, V. G. Mansurov, K. S. Zhuravlev, “Undoped high-resistance GaN buffer layer for AlGaN/GaN high-electron-mobility transistors”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:15 (2019), 21–24 ; Tech. Phys. Lett., 45:8 (2019), 761–764 |
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2018 |
| 5. |
T. V. Malin, D. S. Milakhin, V. G. Mansurov, Yu. G. Galitsyn, A. S. Kozhukhov, V. V. Ratnikov, A. N. Smirnov, V. Yu. Davydov, K. S. Zhuravlev, “Effect of the sapphire-nitridation level and nucleation-layer enrichment with aluminum on the structural properties of AlN layers”, Fizika i Tekhnika Poluprovodnikov, 52:6 (2018), 643–650 ; Semiconductors, 52:6 (2018), 789–796 |
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2015 |
| 6. |
D. S. Milakhin, T. V. Malin, V. G. Mansurov, Yu. G. Galitsyn, K. S. Zhuravlev, “Nitridation of an unreconstructed and reconstructed $(\sqrt{31}\times\sqrt{31})R\pm9^\circ$ (0001) sapphire surface in an ammonia flow”, Fizika i Tekhnika Poluprovodnikov, 49:7 (2015), 925–931 ; Semiconductors, 49:7 (2015), 905–910 |
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