|
|
|
Publications in Math-Net.Ru |
Citations |
|
2019 |
| 1. |
G. M. Umnyagin, V. E. Degtyarov, S. V. Obolensky, “Numerical simulation of the current–voltage characteristics of bilayer resistive memory based on non-stoichiometric metal oxides”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1275–1278   ; Semiconductors, 53:9 (2019), 1246–1248 |
1
|
|
2017 |
| 2. |
V. E. Degtyarov, S. V. Khazanova, A. A. Konakov, “Effect of electric field on the ratio between the rashba and dresselhaus parameters in III–V heterostructures”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1462–1467 ; Semiconductors, 51:11 (2017), 1409–1414 |
1
|
|
2015 |
| 3. |
N. S. Volkova, A. P. Gorshkov, S. V. Tikhov, N. V. Baidus, S. V. Khazanova, V. E. Degtyarov, D. O. Filatov, “Influence of the spatial arrangement of the Si $\delta$ layer on the optoelectronic properties of InGaAs/GaAs quantum-well nanoheterostructures”, Fizika i Tekhnika Poluprovodnikov, 49:2 (2015), 145–148 ; Semiconductors, 49:2 (2015), 139–142 |
| 4. |
S. V. Khazanova, V. E. Degtyarov, N. V. Malekhonova, D. A. Pavlov, N. V. Baidus, “Influence of the technological parameters of growth on the characteristics of double tunnel-coupled InGaAs/GaAs quantum wells”, Fizika i Tekhnika Poluprovodnikov, 49:1 (2015), 58–62 ; Semiconductors, 49:1 (2015), 55–59 |
1
|
| 5. |
S. V. Khazanova, V. E. Degtyarov, S. V. Tikhov, N. V. Baidus, “Simulation of the effective concentration profiles in InGaAs/GaAs heterostructures containing $\delta$-doped layers”, Fizika i Tekhnika Poluprovodnikov, 49:1 (2015), 53–57 ; Semiconductors, 49:1 (2015), 50–54 |
5
|
|
2012 |
| 6. |
S. V. Tikhov, N. V. Baidus, A. A. Biryukov, V. E. Degtyarov, “Admittance spectroscopy of ring diode InGaAs/InAlAs/InP quantum-well structures”, Fizika i Tekhnika Poluprovodnikov, 46:12 (2012), 1561–1565 ; Semiconductors, 46:12 (2012), 1524–1528 |
1
|
| 7. |
S. V. Khazanova, N. V. Baidus, B. N. Zvonkov, D. A. Pavlov, N. V. Malekhonova, V. E. Degtyarov, D. S. Smotrin, I. A. Bobrov, “Tunnel-coupled InGaAs/GaAs quantum wells: Structure, composition, and energy spectrum”, Fizika i Tekhnika Poluprovodnikov, 46:12 (2012), 1510–1514 ; Semiconductors, 46:12 (2012), 1476–1480 |
4
|
|
| Organisations |
|
|
