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Publications in Math-Net.Ru |
Citations |
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2024 |
| 1. |
P. V. Seredin, A. M. Mizerov, N. A. Kurilo, S. A. Kukushkin, D. L. Goloshchapov, N. S. Builov, A. S. Len'shin, D. N. Nesterov, M. S. Sobolev, S. N. Timoshnev, K. Yu. Shubina, “Studies of Al$_x$Ga$_{1-x}$N/AlN, nanosized columnar heterostructures grown on silicon substrates with various surface modifications”, Zhurnal Tekhnicheskoi Fiziki, 94:1 (2024), 138–150   |
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2022 |
| 2. |
P. V. Seredin, Ali Obaid Radam, D. L. Goloshchapov, A. S. Len'shin, N. S. Builov, K. A. Barkov, D. N. Nesterov, A. M. Mizerov, S. N. Timoshnev, E. V. Nikitina, I. N. Arsent'ev, Sh. Sharofidinov, L. S. Vavilova, S. A. Kukushkin, I. A. Kasatkin, “Growth of thin-film AlGaN/GaN epitaxial heterostructures on hybrid substrates containing layers of silicon carbide and porous silicon”, Fizika i Tekhnika Poluprovodnikov, 56:6 (2022), 547–552 |
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2018 |
| 3. |
V. A. Terekhov, D. S. Usol'tseva, O. V. Serbin, I. E. Zanin, T. V. Kulikova, D. N. Nesterov, K. A. Barkov, A. V. Sitnikov, S. K. Lazaruk, È. P. Domashevskaya, “Phase formation and electronic structure peculiarities in the Al$_{1-x}$Si$_{x}$ film composites under the conditions of magnetron and ion-beam sputtering”, Fizika Tverdogo Tela, 60:5 (2018), 1005–1011 ; Phys. Solid State, 60:5 (2018), 1021–1028 |
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2017 |
| 4. |
S. Yu. Turishchev, V. A. Terekhov, D. A. Koyuda, A. V. Ershov, A. I. Mashin, E. V. Parinova, D. N. Nesterov, D. A. Grachev, I. A. Karabanova, È. P. Domashevskaya, “Formation of silicon nanocrystals in multilayer nanoperiodic $a$-SiO$_{x}$/insulator structures from the results of synchrotron investigations”, Fizika i Tekhnika Poluprovodnikov, 51:3 (2017), 363–366 ; Semiconductors, 51:3 (2017), 349–352 |
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2015 |
| 5. |
O. A. Chuvenkova, È. P. Domashevskaya, S. V. Ryabtsev, Yu. A. Yurakov, A. E. Popov, D. A. Koyuda, D. N. Nesterov, D. E. Spirin, R. Yu. Ovsyannikov, S. Yu. Turishchev, “XANES and XPS investigations of surface defects in wire-like SnO$_2$ crystals”, Fizika Tverdogo Tela, 57:1 (2015), 145–152 ; Phys. Solid State, 57:1 (2015), 153–161 |
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| 6. |
S. Yu. Turishchev, V. A. Terekhov, D. A. Koyuda, D. E. Spirin, E. V. Parinova, D. N. Nesterov, D. A. Grachev, I. A. Karabanova, A. V. Ershov, A. I. Mashin, È. P. Domashevskaya, “Formation of Si nanocrystals in multilayered nanoperiodic Al$_2$O$_3$/SiO$_x$/Al$_2$O$_3$/SiO$_x$/$\dots$/Si(100) structures: Synchrotron and photoluminescence data”, Fizika i Tekhnika Poluprovodnikov, 49:3 (2015), 421–425 ; Semiconductors, 49:3 (2015), 409–413 |
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| 7. |
S. Yu. Turishchev, V. A. Terekhov, D. N. Nesterov, K. G. Koltygina, V. A. Sivakov, È. P. Domashevskaya, “Atomic and electronic structure peculiarities of silicon wires formed on substrates with varied resistivity according to ultrasoft X-ray emission spectroscopy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:7 (2015), 81–88 ; Tech. Phys. Lett., 41:4 (2015), 344–347 |
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