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Publications in Math-Net.Ru |
Citations |
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2017 |
| 1. |
V. V. Voronenkov, M. V. Virko, V. S. Kogotkov, A. A. Leonidov, A. V. Pinchuk, A. S. Zubrilov, R. I. Gorbunov, F. E. Latyshev, N. I. Bochkareva, Yu. S. Lelikov, D. V. Tarkhin, A. N. Smirnov, V. Yu. Davydov, I. A. Sheremet, Yu. G. Shreter, “On the laser lift-off of lightly doped micrometer-thick $n$-GaN films from substrates via the absorption of IR radiation in sapphire”, Fizika i Tekhnika Poluprovodnikov, 51:1 (2017), 116–123   ; Semiconductors, 51:1 (2017), 115–121 |
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2016 |
| 2. |
M. V. Virko, V. S. Kogotkov, A. A. Leonidov, V. V. Voronenkov, Yu. T. Rebane, A. S. Zubrilov, R. I. Gorbunov, F. E. Latyshev, N. I. Bochkareva, Yu. S. Lelikov, D. V. Tarkhin, A. N. Smirnov, V. Yu. Davydov, Yu. G. Shreter, “On the laser detachment of $n$-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in $n^+$-GaN substrates”, Fizika i Tekhnika Poluprovodnikov, 50:5 (2016), 711–716 ; Semiconductors, 50:5 (2016), 699–704 |
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| 3. |
A. Altakhov, R. I. Gorbunov, L. A. Kasharina, F. E. Latyshev, V. A. Tarala, Yu. G. Shreter, “Amorphous carbon buffer layers for separating free gallium nitride films”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:21 (2016), 32–38 ; Tech. Phys. Lett., 42:11 (2016), 1076–1078 |
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2013 |
| 4. |
N. I. Bochkareva, V. V. Voronenkov, R. I. Gorbunov, F. E. Latyshev, Yu. S. Lelikov, Yu. T. Rebane, A. I. Tsyuk, Yu. G. Shreter, “Tunnel injection and power efficiency of InGaN/GaN light-emitting diodes”, Fizika i Tekhnika Poluprovodnikov, 47:1 (2013), 129–136 ; Semiconductors, 47:1 (2013), 127–134 |
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2012 |
| 5. |
N. I. Bochkareva, V. V. Voronenkov, R. I. Gorbunov, A. S. Zubrilov, F. E. Latyshev, Yu. S. Lelikov, Yu. T. Rebane, A. I. Tsyuk, Yu. G. Shreter, “Effect of localized tail states in InGaN on the efficiency droop in GaN light-emitting diodes with increasing current density”, Fizika i Tekhnika Poluprovodnikov, 46:8 (2012), 1054–1062 ; Semiconductors, 46:8 (2012), 1032–1039 |
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