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Publications in Math-Net.Ru |
Citations |
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2025 |
| 1. |
E. N. Mokhov, S. S. Nagalyuk, O. P. Kazarova, S. I. Dorozhkin, V. A. Soltamov, “Isotopically modified silicon carbide: a semiconductor platform for quantum technologies”, Fizika Tverdogo Tela, 67:1 (2025), 114–120   |
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2011 |
| 2. |
D. D. Avrov, A. V. Bulatov, S. I. Dorozhkin, A. O. Lebedev, Yu. M. Tairov, A. Yu. Fadeev, “Mechanisms of defect formation in ingots of 4H silicon carbide polytype”, Fizika i Tekhnika Poluprovodnikov, 45:3 (2011), 289–294 ; Semiconductors, 45:3 (2011), 277–283 |
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