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Publications in Math-Net.Ru |
Citations |
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2019 |
| 1. |
P. N. Krilov, S. S. Alalykin, E. A. Durman, R. M. Zakirova, I. V. Fedotova, “Effect of ion-beam processing during RF magnetron sputtering on the properties of ZnO films”, Fizika i Tekhnika Poluprovodnikov, 53:11 (2019), 1497–1504   ; Semiconductors, 53:11 (2019), 1457–1464 |
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2018 |
| 2. |
M. M. Ivanov, R. M. Zakirova, V. F. Kobziev, P. N. Krilov, I. V. Fedotova, “Properties of ZnSe/Al$_2$O$_3$ nanostructures obtained by RF magnetron sputtering”, Zhurnal Tekhnicheskoi Fiziki, 88:10 (2018), 1551–1553 ; Tech. Phys., 63:10 (2018), 1504–1506 |
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2017 |
| 3. |
S. S. Alalykin, A. A. Deduhin, R. M. Zakirova, V. F. Kobziev, N. V. Kostenkov, P. N. Krilov, I. V. Fedotova, “Production and investigation of layered zinc sulfide(selenide)/insulator nanocomposites”, Zhurnal Tekhnicheskoi Fiziki, 87:5 (2017), 754–757 ; Tech. Phys., 62:5 (2017), 773–776 |
| 4. |
V. F. Kobziev, R. M. Zakirova, N. V. Kostenkov, P. N. Krilov, I. V. Fedotova, “Effect of deposition temperature on the structure and optical properties of zinc-selenide films produced by radio-frequency magnetron sputtering”, Fizika i Tekhnika Poluprovodnikov, 51:6 (2017), 850–854 ; Semiconductors, 51:6 (2017), 817–822 |
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2016 |
| 5. |
F. F. Chausov, V. G. Petrov, M. A. Shumilova, R. M. Zakirova, D. K. Zhirov, “Sodium-europium bis-nitrilo-tris(methylenephosphonate)”, CPM, 18:4 (2016), 606–611 |
| 6. |
P. N. Krilov, R. M. Zakirova, V. F. Kobziev, N. V. Kostenkov, I. V. Fedotova, R. R. Khamidullin, A. A. Deduhin, “Structure and optical properties of ZnSe/SiO$_2$ layered nanocomposites”, Zhurnal Tekhnicheskoi Fiziki, 86:7 (2016), 69–73 ; Tech. Phys., 61:7 (2016), 1027–1031 |
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| 7. |
A. A. Deduhin, P. N. Krilov, N. V. Kostenkov, R. M. Zakirova, I. V. Fedotova, “Effect of thermal annealing on the structure of ZnSe/Al$_{2}$O$_{3}$ nanocomposite films”, Zhurnal Tekhnicheskoi Fiziki, 86:4 (2016), 91–95 ; Tech. Phys., 61:4 (2016), 569–573 |
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2015 |
| 8. |
V. A. Trapeznikov, F. F. Chausov, N. V. Somov, E. A. Naimushina, I. N. Shabanova, A. L. Ulyanov, R. M. Zakirova, I. V. Fedotova, M. A. Shumilova, V. A. Aleksandrov, V. G. Petrov, “The role of jahn-teller effect in formation of anticorrosive protective layers of nitrilo-tris-methylene-phosphonates on the steels surface”, CPM, 17:4 (2015), 599–603 |
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| 9. |
A. A. Deduhin, R. M. Zakirova, N. V. Kostenkov, P. N. Krilov, I. V. Fedotova, “Effect of annealing on the optical properties and structure of nanocomposite films ZnSe/Al$_2$O$_3$”, CPM, 17:4 (2015), 574–579 |
| 10. |
S. S. Alalykin, R. M. Zakirova, V. F. Kobziev, P. N. Krilov, I. V. Fedotova, “The formation by RF magnetron sputtering on the upgraded setup the cathode-1m of multilayer structures ZnS/SiO<sub>2</sub>”, CPM, 17:3 (2015), 360–363 |
| 11. |
P. N. Krilov, R. M. Zakirova, I. A. Knyazev, N. V. Kostenkov, È. A. Romanov, I. V. Fedotova, “Structure and optical transmission spectra of ZnS–SiO$_2$ nanocomposite films deposited at low temperatures”, Fizika i Tekhnika Poluprovodnikov, 49:10 (2015), 1371–1375 ; Semiconductors, 49:10 (2015), 1327–1331 |
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2014 |
| 12. |
P. N. Krilov, R. M. Zakirova, I. V. Fedotova, “Effect of ion-beam treatment during reactive radio-frequency magnetron sputtering on the concentration and mobility of charge carriers in ITO films”, Fizika i Tekhnika Poluprovodnikov, 48:9 (2014), 1269–1273 ; Semiconductors, 48:9 (2014), 1237–1241 |
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| 13. |
P. N. Krilov, R. M. Zakirova, I. V. Fedotova, “Effect of ion-beam treatment during reactive high-frequency magnetron sputtering on macrostresses in ITO films”, Fizika i Tekhnika Poluprovodnikov, 48:6 (2014), 763–767 ; Semiconductors, 48:6 (2014), 743–747 |
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2013 |
| 14. |
P. N. Krilov, R. M. Zakirova, I. V. Fedotova, “Optical properties of ITO films obtained by high-frequency magnetron sputtering with accompanying ion treatment”, Fizika i Tekhnika Poluprovodnikov, 47:10 (2013), 1421–1424 ; Semiconductors, 47:10 (2013), 1412–1415 |
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| 15. |
P. N. Krilov, R. M. Zakirova, I. V. Fedotova, F. Z. Gilmutdinov, “Effect of ion treatment on the properties of In$_2$O$_3$ : Sn films”, Fizika i Tekhnika Poluprovodnikov, 47:6 (2013), 859–863 ; Semiconductors, 47:6 (2013), 870–874 |
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