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Publications in Math-Net.Ru |
Citations |
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2019 |
| 1. |
P. V. Seredin, D. L. Goloshchapov, D. S. Zolotukhin, A. S. Len'shin, A. M. Mizerov, I. N. Arsent'ev, Harald Leiste, Monika Rinke, “Structural and morphological properties of hybrid heterostructures based on gan grown on a compliant por-Si(111) substrate”, Fizika i Tekhnika Poluprovodnikov, 53:8 (2019), 1141–1151   ; Semiconductors, 53:8 (2019), 1120–1130 |
| 2. |
P. V. Seredin, D. L. Goloshchapov, D. S. Zolotukhin, A. S. Len'shin, A. N. Lukin, A. M. Mizerov, E. V. Nikitina, I. N. Arsent'ev, Harald Leiste, Monika Rinke, “Influence of a por-Si buffer layer on the optical properties of epitaxial In$_{x}$Ga$_{1-x}$N/Si(111) heterostructures with a nanocolumnar film morphology”, Fizika i Tekhnika Poluprovodnikov, 53:1 (2019), 70–76 ; Semiconductors, 53:1 (2019), 65–71 |
| 3. |
P. V. Seredin, D. L. Goloshchapov, D. S. Zolotukhin, A. S. Len'shin, A. M. Mizerov, I. N. Arsent'ev, H. Leiste, M. Rinke, “Electronic and optical properties of hybrid GaN/por-Si(111) heterostructures”, Kvantovaya Elektronika, 49:6 (2019), 545–551 [Quantum Electron., 49:6 (2019), 545–551   ] |
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2018 |
| 4. |
P. V. Seredin, D. L. Goloshchapov, D. S. Zolotukhin, M. A. Kondrashin, A. S. Len'shin, Yu. Yu. Khudyakov, A. M. Mizerov, I. N. Arsent'ev, A. N. Beltyukov, Harald Leiste, M. Rinke, “Effect of a $por$-Si buffer layer on the structure and morphology of epitaxial In$_{x}$Ga$_{1-x}$N/Si(111) heterostructures”, Fizika i Tekhnika Poluprovodnikov, 52:13 (2018), 1553–1562 ; Semiconductors, 52:13 (2018), 1653–1661 |
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| 5. |
P. V. Seredin, A. S. Len'shin, A. V. Fedyukin, I. N. Arsent'ev, A. V. Zhabotinsky, D. N. Nikolaev, Harald Leiste, Monika Rinke, “Influence of substrate misorientation on the composition and the structural and photoluminescence properties of epitaxial layers grown on GaAs(100)”, Fizika i Tekhnika Poluprovodnikov, 52:1 (2018), 118–124 ; Semiconductors, 52:1 (2018), 112–117 |
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2017 |
| 6. |
P. V. Seredin, A. S. Len'shin, I. N. Arsent'ev, A. V. Zhabotinsky, D. N. Nikolaev, I. S. Tarasov, V. V. Shamakhov, Tatiana Prutskij, Harald Leiste, Monika Rinke, “Epitaxial Al$_{x}$Ga$_{1-x}$As : Mg alloys with different conductivity types”, Fizika i Tekhnika Poluprovodnikov, 51:1 (2017), 124–132 ; Semiconductors, 51:1 (2017), 122–130 |
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2016 |
| 7. |
P. V. Seredin, A. V. Fedyukin, I. N. Arsent'ev, L. S. Vavilova, I. S. Tarasov, Tatiana Prutskij, Harald Leiste, Monika Rinke, “Structural and optical properties of GaAs(100) with a thin surface layer doped with chromium”, Fizika i Tekhnika Poluprovodnikov, 50:7 (2016), 869–876 ; Semiconductors, 50:7 (2016), 853–859 |
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2014 |
| 8. |
P. V. Seredin, A. S. Len'shin, A. V. Glotov, I. N. Arsent'ev, D. A. Vinokurov, I. S. Tarasov, T. Prutskij, H. Leiste, M. Rinke, “Structural and optical properties of heavily doped Al$_x$Ga$_{1-x}$As$_{1-y}$P$_y$:Mg alloys produced by metal-organic chemical vapor deposition”, Fizika i Tekhnika Poluprovodnikov, 48:8 (2014), 1123–1131 ; Semiconductors, 48:8 (2014), 1094–1102 |
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| 9. |
P. V. Seredin, A. V. Glotov, A. S. Len'shin, I. N. Arsent'ev, D. A. Vinokurov, Tatiana Prutskij, Harald Leiste, Monika Rinke, “Structure and optical properties of heterostructures based on MOCVD (Al$_x$Ga$_{1-x}$As$_{1-y}$P$_y$)$_{1-z}$Si$_z$ alloys”, Fizika i Tekhnika Poluprovodnikov, 48:1 (2014), 23–31 ; Semiconductors, 48:1 (2014), 21–29 |
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