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Publications in Math-Net.Ru |
Citations |
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2019 |
| 1. |
V. N. Brudnyi, M. D. Vilisova, L. E. Velikovskiy, “In$_{x}$Al$_{1-x}$N solid solutions: Composition stability issues”, Fizika i Tekhnika Poluprovodnikov, 53:12 (2019), 1733–1739   ; Semiconductors, 53:12 (2019), 1724–1730 |
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2015 |
| 2. |
S. Yu. Sarkisov, A. V. Kosobutsky, V. N. Brudnyi, Yu. N. Zhuravlev, “Ab initio calculations of optical constants of GaSe and InSe layered crystals”, Fizika Tverdogo Tela, 57:9 (2015), 1693–1697 ; Phys. Solid State, 57:9 (2015), 1735–1740 |
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| 3. |
V. N. Brudnyi, S. Yu. Sarkisov, A. V. Kosobutsky, “On the charge neutrality level and the electronic properties of interphase boundaries in the layered $\varepsilon$-GaSe semiconductor”, Fizika i Tekhnika Poluprovodnikov, 49:10 (2015), 1351–1354 ; Semiconductors, 49:10 (2015), 1307–1310 |
1
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| 4. |
V. M. Boiko, V. N. Brudnyi, V. S. Ermakov, N. G. Kolin, A. V. Korulin, “On the electronic properties of GaSb irradiated with reactor neutrons and its charge neutrality level”, Fizika i Tekhnika Poluprovodnikov, 49:6 (2015), 782–785 ; Semiconductors, 49:6 (2015), 763–766 |
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2014 |
| 5. |
V. M. Boiko, V. N. Brudnyi, S. S. Verevkin, V. S. Ermakov, N. G. Kolin, A. V. Korulin, A. Ya. Polyakov, “Electronic properties of $p$-GaN(Mg) irradiated with reactor neutrons”, Fizika i Tekhnika Poluprovodnikov, 48:7 (2014), 885–889 ; Semiconductors, 48:7 (2014), 859–863 |
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2012 |
| 6. |
V. N. Brudnyi, S. S. Verevkin, A. V. Govorkov, V. S. Ermakov, N. G. Kolin, A. V. Korulin, A. Ya. Polyakov, N. B. Smirnov, “Electronic properties and deep traps in electron-irradiated $n$-GaN”, Fizika i Tekhnika Poluprovodnikov, 46:4 (2012), 450–456 ; Semiconductors, 46:4 (2012), 433–439 |
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1989 |
| 7. |
N. N. Bakin, V. N. Brudnyi, V. V. Peshev, S. V. Smorodinov, “Образование центров E10
(${E_{c}-0.62}$ эВ) в области пространственного заряда и нейтральном объеме
$n$-InP при электронном и $\gamma$-облучениях”, Fizika i Tekhnika Poluprovodnikov, 23:5 (1989), 890–892 |
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1988 |
| 8. |
V. N. Brudnyi, V. V. Peshev, A. M. Pritulov, “Накопление E3-центров в $n$-GaAs при $\gamma$-облучении в интервале
температур ${77\div580}$ K”, Fizika i Tekhnika Poluprovodnikov, 22:6 (1988), 1124–1126 |
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1986 |
| 9. |
V. N. Brudnyi, A. A. Tsoi, “Positron Annihilation Centers in A$^{\text{III}}$B$^{\text{V}}$ Semiconductors Irradiated by Electrons”, Fizika i Tekhnika Poluprovodnikov, 20:3 (1986), 511–514 |
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1985 |
| 10. |
V. N. Brudnyi, V. A. Novikov, “«Limiting» Dielectric Parameters of GaP Irradiated by Electrons”, Fizika i Tekhnika Poluprovodnikov, 19:4 (1985), 747–749 |
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1984 |
| 11. |
V. N. Brudnyi, S. E. Ermatov, S. B. Nurmagambetov, A. D. Pogrebnyak, V. T. Tolebaev, “Positron annihilation in neutron-irradiated $\alpha$-$\mathrm{SiC}$$(6H)$”, Fizika Tverdogo Tela, 26:5 (1984), 1452–1456 |
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1983 |
| 12. |
V. N. Brudnyi, A. I. Potapov, Yu. V. Rud', M. Serginov, “Электрическте свойства твердых растворов
A$^{\text{III}}$B$^{\text{V}}{-}$A$^{\text{II}}$B$^{\text{IV}}$C$^{\text{V}}_{2}$,
облученных ионами H$^{+}$”, Fizika i Tekhnika Poluprovodnikov, 17:7 (1983), 1347–1348 |
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2012 |
| 13. |
V. N. Brudnyi, V. T. Bublik, B. N. Goshchitskii, V. V. Emtsev, Yu. A. Kazanskii, R. F. Konopleva, Yu. V. Konobeev, N. G. Kolin, I. I. Kuz'min, V. N. Mordkovich, R. P. Ozerov, V. B. Osvenskii, A. A. Stuk, V. A. Kharchenko, “Памяти Сергея Петровича Соловьева к 80-летию со дня рождения (1932–2000)”, Fizika i Tekhnika Poluprovodnikov, 46:10 (2012), 1374–1375 |
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