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Publications in Math-Net.Ru |
Citations |
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2023 |
| 1. |
E. A. Il'ichev, A. E. Kuleshov, P. V. Minakov, G. N. Petrukhin, G. S. Rychkov, A. N. Demidova, D. A. Korlyakov, “The cascade matrix electron flow amplifier based on an electron multiplier concentrator”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:7 (2023), 43–46   |
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2022 |
| 2. |
P. A. Zolotukhin, E. A. Il'ichev, G. N. Petrukhin, A. V. Popov, G. S. Rychkov, E. G. Teverovskaya, “Calculation and optimization of the limiting characteristics of a single-channel dual-spectrum image receiver of objects emitting in the ultraviolet range”, Zhurnal Tekhnicheskoi Fiziki, 92:9 (2022), 1449–1459 |
| 3. |
A. S. Grevcev, P. A. Zolotukhin, E. A. Il'ichev, G. N. Petrukhin, A. V. Popov, G. S. Rychkov, “An investigation of reading thermal images processes by a thermal image receiver made in the image intensifier tube architecture”, Zhurnal Tekhnicheskoi Fiziki, 92:5 (2022), 649–659 |
| 4. |
A. S. Grevcev, P. A. Zolotukhin, E. A. Il'ichev, G. N. Petrukhin, A. V. Popov, G. S. Rychkov, “The thermal image receiver realized in the Image intensifier tube architecture”, Zhurnal Tekhnicheskoi Fiziki, 92:4 (2022), 507–519 |
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2021 |
| 5. |
E. A. Il'ichev, A. E. Kuleshov, G. N. Petrukhin, P. V. Minakov, G. S. Rychkov, V. V. Sen, E. G. Teverovskaya, “Diamond photocathodes as field-emission electrodes for vacuum microelectronics”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:10 (2021), 3–6 ; Tech. Phys. Lett., 47:7 (2021), 503–506 |
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| 6. |
V. A. Bespalov, E. A. Il'ichev, I. P. Kazakov, G. A. Kirpilenko, A. I. Kozlitin, P. V. Minakov, V. V. Saraikin, A. V. Klekovkin, S. V. Kuklev, G. N. Petrukhin, G. S. Rychkov, D. S. Sokolov, E. G. Teverovskaya, “Characteristics of solar-blind electron-optical converters with diamond photocathodes”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:9 (2021), 3–6 ; Tech. Phys. Lett., 47:6 (2021), 432–435 |
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2018 |
| 7. |
E. A. Il'ichev, A. E. Kuleshov, D. M. Migunov, R. M. Nabiev, G. N. Petrukhin, G. S. Rychkov, E. G. Teverovskaya, V. O. Khaustov, “Studying the transparency of graphene for low-energy electrons”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:18 (2018), 94–102 ; Tech. Phys. Lett., 44:9 (2018), 848–851 |
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2017 |
| 8. |
E. A. Il'ichev, A. E. Kuleshov, R. M. Nabiev, G. N. Petrukhin, G. S. Rychkov, E. G. Teverovskaya, “The photoemissive cell of a vacuum ultraviolet radiation detector array”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:7 (2017), 48–55 ; Tech. Phys. Lett., 43:4 (2017), 345–347 |
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2015 |
| 9. |
V. A. Gergel, I. V. Altukhov, A. V. Verkhovtseva, G. B. Galiev, N. M. Gorshkova, A. P. Zelenyi, E. A. Il'ichev, V. S. Minkin, S. K. Paprotskii, “Electrical instability against thermal injection in multibarrier heterostructures: Theoretical model and experimental data”, Zhurnal Tekhnicheskoi Fiziki, 85:7 (2015), 83–86 ; Tech. Phys., 60:7 (2015), 1027–1030 |
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| 10. |
V. A. Bespalov, V. M. Glazov, E. A. Il'ichev, Yu. A. Klimov, S. V. Kuklev, A. E. Kuleshov, R. M. Nabiev, G. N. Petrukhin, B. G. Potapov, G. S. Rychkov, D. S. Sokolov, V. V. Fandeev, E. A. Fetisov, S. S. Yakushov, “Design and investigation of UV image detectors”, Zhurnal Tekhnicheskoi Fiziki, 85:4 (2015), 74–82 ; Tech. Phys., 60:4 (2015), 553–560 |
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2014 |
| 11. |
V. A. Bespalov, E. A. Il'ichev, A. E. Kuleshov, D. M. Migunov, R. M. Nabiev, G. N. Petrukhin, G. S. Rychkov, O. A. Sakharov, Yu. V. Shcherbakhin, “Field-emission diodes based on semiconductor–polycrystalline diamond heterojunctions”, Zhurnal Tekhnicheskoi Fiziki, 84:10 (2014), 112–116 ; Tech. Phys., 59:10 (2014), 1531–1535 |
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| 12. |
E. A. Il'ichev, E. P. Kirilenko, G. N. Petrukhin, G. S. Rychkov, O. A. Sakharov, Z. M. Khamdokhov, E. Z. Khamdolhov, E. S. Chernyavskaya, M. L. Shupegin, A. A. Shchekin, “Method for the formation of graphene films”, Zhurnal Tekhnicheskoi Fiziki, 84:7 (2014), 62–66 ; Tech. Phys., 59:7 (2014), 1007–1011 |
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| 13. |
V. A. Gergel, I. V. Altukhov, A. V. Verkhovtseva, G. B. Galiev, N. M. Gorshkova, S. S. Zhigaltsov, A. P. Zelenyi, E. A. Il'ichev, V. S. Minkin, S. K. Paprotskii, M. N. Yakupov, “Analytical model of the electrical instability mechanism in multibarrier heterostructures with tunnel-opaque barriers”, Fizika i Tekhnika Poluprovodnikov, 48:4 (2014), 481–486 ; Semiconductors, 48:4 (2014), 465–470 |
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| 14. |
E. A. Il'ichev, E. P. Kirilenko, G. N. Petrukhin, G. S. Rychkov, O. A. Sakharov, E. Z. Khamdolhov, E. S. Chernyavskaya, M. L. Shupegin, A. A. Shchekin, “Peculiarities of graphene layer formation from amorphous carbon and silicon-carbon films”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:2 (2014), 10–15 ; Tech. Phys. Lett., 40:1 (2014), 52–54 |
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2013 |
| 15. |
E. A. Il'ichev, A. E. Kuleshov, R. M. Nabiev, G. N. Petrukhin, G. S. Rychkov, O. A. Sakharov, E. S. Chernyavskaya, “The use of graphene in vacuum micro- and nanoelectronics”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:18 (2013), 25–31 ; Tech. Phys. Lett., 39:9 (2013), 808–810 |
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| 16. |
V. A. Bespalov, E. A. Il'ichev, A. E. Kuleshov, D. M. Migunov, R. M. Nabiev, G. N. Petrukhin, G. S. Rychkov, Yu. V. Shcherbakhin, “Solid-state field-emission diode”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:4 (2013), 46–52 ; Tech. Phys. Lett., 39:2 (2013), 206–208 |
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2012 |
| 17. |
M. E. Belousov, E. A. Il'ichev, A. E. Kuleshov, N. K. Matveeva, P. V. Minakov, G. N. Petrukhin, R. M. Nabiev, G. S. Rychkov, “Electron flux amplifier on diamond-coated silicon grating”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:6 (2012), 45–51 ; Tech. Phys. Lett., 38:3 (2012), 276–278 |
| 18. |
M. E. Belousov, E. A. Il'ichev, A. E. Kuleshov, N. K. Matveeva, P. V. Minakov, G. N. Petrukhin, R. M. Nabiev, G. S. Rychkov, “Mask for micropattern formation on diamond films”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:5 (2012), 49–55 ; Tech. Phys. Lett., 38:3 (2012), 225–227 |
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1992 |
| 19. |
V. A. Gergel, E. A. Il'ichev, A. I. Luk'yanchenko, É. A. Poltoratskiĭ, K. S. Shchamkhalov, “Substrate parasite control in field-effect transistors on gallium arsenide”, Fizika i Tekhnika Poluprovodnikov, 26:5 (1992), 794–800 |
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1991 |
| 20. |
V. A. Gergel, E. A. Il'ichev, É. A. Poltoratskiĭ, A. V. Rodionov, S. P. Tarnavskii, A. V. Fedorenko, “Частотная дисперсия крутизны в полевых транзисторах на основе
$\delta$-легированных структур”, Fizika i Tekhnika Poluprovodnikov, 25:11 (1991), 1870–1876 |
| 21. |
V. A. Gergel, A. I. Lukyanchenko, A. N. Solyakov, E. A. Il'ichev, É. A. Poltoratskiĭ, “Температурная зависимость эффекта управления транзистором через
полуизолирующую подложку в интегральных схемах на арсениде галлия”, Fizika i Tekhnika Poluprovodnikov, 25:9 (1991), 1667–1670 |
| 22. |
V. A. Gergel, E. A. Il'ichev, É. A. Poltoratskiĭ, A. V. Rodionov, S. P. Tarnavskii, A. V. Fedorenko, “EFFECT OF SCHOTTKY-BARRIER PROPERTIES ON FREQUENCY DISPERSION OF
TRANSCONDUCTANCE OF FIELD TRANSISTOR WITH SCHOTTKY-BARRIER”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:14 (1991), 78–80 |
| 23. |
V. A. Gergel, E. A. Il'ichev, A. I. Lukyanchenko, É. A. Poltoratskiĭ, K. S. Shamkhalov, “MECHANISMS OF PARASITIC CONTROL ON SUBSTRATE IN GAAS FIELD SCHOTTKY
TRANSISTORS”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:14 (1991), 36–38 |
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1990 |
| 24. |
V. A. Gergel, E. A. Il'ichev, A. I. Lukyanchenko, É. A. Poltoratskiĭ, A. N. Solyakov, “Физическая модель эффекта управления полевым транзистором через
полуизолирующую подложку”, Fizika i Tekhnika Poluprovodnikov, 24:12 (1990), 2111–2116 |
| 25. |
E. A. Il'ichev, S. P. Oleinik, L. I. Matyna, I. V. Varlamov, T. L. Lipshits, V. N. Inkin, “Гетеропереход $n$-GaAs$-$ZnS в МДП приборах. II. Транзисторы
с изолированным затвором”, Fizika i Tekhnika Poluprovodnikov, 24:6 (1990), 978–981 |
| 26. |
E. A. Il'ichev, S. P. Oleinik, L. I. Matyna, I. V. Varlamov, T. L. Lipshits, V. N. Inkin, “Гетеропереход $n$-GaAs$-$ZnS в МДП приборах.
I. Электрофизические
свойства гетероперехода”, Fizika i Tekhnika Poluprovodnikov, 24:5 (1990), 788–794 |
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1986 |
| 27. |
E. A. Il'ichev, S. K. Maksimov, E. N. Nagdaev, É. A. Poltoratskiĭ, A. V. Rodionov, Yu. V. Slepnev, “CHARACTERISTICS OF ELECTROPHYSICAL AND STRUCTURAL-PROPERTIES OF
INSULATING LAYERS IN THE GAAS-ALAS SYSTEM OBTAINED BY THE HYDRID MOS
METHOD”, Zhurnal Tekhnicheskoi Fiziki, 56:11 (1986), 2245–2247 |
| 28. |
E. A. Il'ichev, É. A. Poltoratskiĭ, “Modulation of Negative Space Charge in the Insulator–Semiconductor Structures Produced in a GaAs$-$AlAs System”, Fizika i Tekhnika Poluprovodnikov, 20:10 (1986), 1782–1786 |
| 29. |
S. M. Afanasev, E. A. Il'ichev, É. A. Poltoratskiĭ, A. V. Rodionov, Yu. V. Slepnev, B. V. Strizhkov, “Influence of Composition on Electrohysical Properties of Al$_{x}$Ga$_{1-x}$As Insulating Layers Produced by MOC Hydride Method”, Fizika i Tekhnika Poluprovodnikov, 20:9 (1986), 1565–1571 |
| 30. |
E. A. Il'ichev, Yu. P. Masloboev, V. M. Maslovskii, É. A. Poltoratskiĭ, A. V. Rodionov, Yu. V. Slepnev, “Trapping of Carriers in Insulator–Semiconductor Structures Produced by MOS Hydride Method in the GaAs-AlAs System”, Fizika i Tekhnika Poluprovodnikov, 20:4 (1986), 757–759 |
| 31. |
E. A. Il'ichev, V. M. Maslovskii, É. A. Poltoratskiĭ, “Electrophysical Properties of Ga$_{1-x}$Al$_x$As Solid-Solution Insulating Layers Produced by MOS Hydride Method”, Fizika i Tekhnika Poluprovodnikov, 20:4 (1986), 594–602 |
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1984 |
| 32. |
E. A. Il'ichev, Yu. P. Masloboev, É. A. Poltoratskiĭ, A. V. Rodionov, Yu. V. Slepnev, “FIELD TRANSISTOR WITH INSULATED SEALS”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:7 (1984), 420–422 |
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