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Publications in Math-Net.Ru |
Citations |
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2020 |
| 1. |
E. V. Fomin, A. D. Bondarev, I. P. Sotnikov, N. B. Bercu, L. Giraudet, M. Molinary, T. Maurer, N. A. Pikhtin, “Using AlN coatings to protect the surface of AlGaAs/GaAs system heterostructures from interaction with atmospheric oxygen”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:6 (2020), 16–19   ; Tech. Phys. Lett., 46:3 (2020), 268–271 |
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2019 |
| 2. |
P. V. Seredin, A. V. Fedyukin, V. A. Terekhov, K. A. Barkov, I. N. Arsent'ev, A. D. Bondarev, E. V. Fomin, N. A. Pikhtin, “On the phase composition, morphology, and optical and electronic characteristics of AlN nanofilms grown on misoriented GaAs (100) substrates”, Fizika i Tekhnika Poluprovodnikov, 53:11 (2019), 1584–1592 ; Semiconductors, 53:11 (2019), 1550–1557 |
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| 3. |
N. A. Sobolev, V. I. Sakharov, I. T. Serenkov, A. D. Bondarev, K. V. Karabeshkin, E. V. Fomin, A. E. Kalyadin, V. M. Mikushkin, E. I. Shek, E. V. Sherstnev, “Defect formation under nitrogen-ion implantation and subsequent annealing in GaAs structures with an uncovered surface and a surface covered with an AlN film”, Fizika i Tekhnika Poluprovodnikov, 53:4 (2019), 437–440 ; Semiconductors, 53:4 (2019), 415–418 |
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| 4. |
E. V. Fomin, A. D. Bondarev, A. I. Rumyantseva, T. Maurer, N. A. Pikhtin, S. A. Tarasov, “Surface topography and optical properties of thin AlN films produced on GaAs (100) substrate by reactive ion-plasma sputtering”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:5 (2019), 38–41 ; Tech. Phys. Lett., 45:3 (2019), 221–224 |
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2018 |
| 5. |
Ya. V. Lubyanskiy, A. D. Bondarev, I. P. Sotnikov, N. A. Bert, V. V. Zolotarev, D. A. Kirilenko, K. P. Kotlyar, N. A. Pikhtin, I. S. Tarasov, “Oxygen nitrogen mixture effect on aluminum nitride synthesis by reactive ion plasma deposition”, Fizika i Tekhnika Poluprovodnikov, 52:2 (2018), 196–200 ; Semiconductors, 52:2 (2018), 184–188 |
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2016 |
| 6. |
P. V. Seredin, D. L. Goloshchapov, A. S. Len'shin, A. N. Lukin, A. V. Fedyukin, I. N. Arsent'ev, A. D. Bondarev, Ya. V. Lubyanskiy, I. S. Tarasov, “Growth features and spectroscopic structure investigations of nanoprofiled AlN films formed on misoriented GaAs substrates”, Fizika i Tekhnika Poluprovodnikov, 50:9 (2016), 1283–1294 ; Semiconductors, 50:9 (2016), 1261–1272 |
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2015 |
| 7. |
N. A. Bert, A. D. Bondarev, V. V. Zolotarev, D. A. Kirilenko, Ya. V. Lubyanskiy, A. V. Lyutetskiy, S. O. Slipchenko, A. N. Petrunov, N. A. Pikhtin, K. R. Ayusheva, I. N. Arsent'ev, I. S. Tarasov, “Properties of AlN films deposited by reactive ion-plasma sputtering”, Fizika i Tekhnika Poluprovodnikov, 49:10 (2015), 1429–1433 ; Semiconductors, 49:10 (2015), 1383–1387 |
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| 8. |
P. V. Seredin, A. S. Len'shin, D. L. Goloshchapov, A. N. Lukin, I. N. Arsent'ev, A. D. Bondarev, I. S. Tarasov, “Investigations of nanodimensional Al$_2$O$_3$ films deposited by ion-plasma sputtering onto porous silicon”, Fizika i Tekhnika Poluprovodnikov, 49:7 (2015), 936–941 ; Semiconductors, 49:7 (2015), 915–920 |
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2014 |
| 9. |
P. V. Seredin, D. L. Goloshchapov, A. N. Lukin, A. S. Len'shin, A. D. Bondarev, I. N. Arsent'ev, L. S. Vavilova, I. S. Tarasov, “Structure and optical properties of thin Al$_2$O$_3$ films deposited by the reactive ion-plasma sputtering method on GaAs (100) substrates”, Fizika i Tekhnika Poluprovodnikov, 48:11 (2014), 1564–1569 ; Semiconductors, 48:11 (2014), 1527–1531 |
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| 10. |
N. A. Pikhtin, A. V. Lyutetskiy, D. N. Nikolaev, S. O. Slipchenko, Z. N. Sokolova, V. V. Shamakhov, I. S. Shashkin, A. D. Bondarev, L. S. Vavilova, I. S. Tarasov, “On the temperature delocalization of carriers in GaAs/AlGaAs/InGaAs quantum-well heterostructures”, Fizika i Tekhnika Poluprovodnikov, 48:10 (2014), 1377–1382 ; Semiconductors, 48:10 (2014), 1342–1347 |
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2013 |
| 11. |
S. O. Slipchenko, A. A. Podoskin, D. A. Vinokurov, A. D. Bondarev, V. A. Kapitonov, N. A. Pikhtin, P. S. Kop'ev, I. S. Tarasov, “AlGaAs/GaAs diode lasers (1020–1100 nm) with an asymmetric broadened single transverse mode waveguide”, Fizika i Tekhnika Poluprovodnikov, 47:8 (2013), 1082–1086 ; Semiconductors, 47:8 (2013), 1079–1083 |
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2012 |
| 12. |
I. S. Shashkin, D. A. Vinokurov, A. V. Lyutetskiy, D. N. Nikolaev, N. A. Pikhtin, M. G. Rastegaeva, Z. N. Sokolova, S. O. Slipchenko, A. L. Stankevich, V. V. Shamakhov, D. A. Veselov, A. D. Bondarev, I. S. Tarasov, “Thermal delocalization of carriers in semiconductor lasers ($\lambda$ = 1010–1070 nm)”, Fizika i Tekhnika Poluprovodnikov, 46:9 (2012), 1230–1233 ; Semiconductors, 46:9 (2012), 1207–1210 |
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1985 |
| 13. |
A. D. Bondarev, N. I. Katsavets, I. E. Kudrik, E. I. Leonov, S. E. Khabarov, “Investigation of optical and photoelectric properties of heteroepitaxial films of bismuth titanate and gallate”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:12 (1985), 713–717 |
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