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Popov, Vladimir Pavlovich
Doctor of physico-mathematical sciences (2005)
Speciality: 01.04.10 (Physcics of semiconductors)
E-mail:
Website: https://www.isp.nsc.ru/institut/nauchnye-podrazdeleniya/laboratoriya-10/rukovoditel

https://www.mathnet.ru/eng/person166341
List of publications on Google Scholar
https://elibrary.ru/author_items.asp?authorid=166341

Publications in Math-Net.Ru Citations
2025
1. V. P. Popov, V. A. Antonov, V. E. Zhilitskii, A. A. Lomov, A. V. Myakonkikh, K. V. Rudenko, “Thermally stable ferroelectric HfO$_2$ : Al$_2$O$_3$ (10:1) in silicon-on-insulator and silicon-on-sapphire heterostructures after rapid thermal annealing treatments and oxidation-induced silicon thinning”, Pis'ma v Zh. Èksper. Teoret. Fiz., 121:12 (2025),  945–951  mathnet; JETP Letters, 121:12 (2025), 902–908
2022
2. I. E. Tyschenko, E. V. Spesivtsev, A. A. Shklyaev, V. P. Popov, “Structural changes in nanometer-thick silicon-on-insulator films during high-temperature annealing”, Fizika i Tekhnika Poluprovodnikov, 56:3 (2022),  320–327  mathnet  elib
3. I. E. Tyschenko, R. A. Khmelnitskii, V. V. Saraikin, V. A. Volodin, V. P. Popov, “Germanium diffusion from buried SiO$_2$ layer and SiGe phase formation”, Fizika i Tekhnika Poluprovodnikov, 56:2 (2022),  192–198  mathnet  elib
2021
4. I. E. Tyschenko, M. Voelskow, Si. Zh, V. P. Popov, “Diffusion of In atoms in SiO$_{2}$ films implanted with As$^{+}$ ions”, Fizika i Tekhnika Poluprovodnikov, 55:3 (2021),  217–223  mathnet  elib; Semiconductors, 55:3 (2021), 289–295
2019
5. I. E. Tyschenko, V. A. Volodin, V. P. Popov, “Raman scattering in InSb spherical nanocrystals ion-synthesized in silicon-oxide films”, Fizika i Tekhnika Poluprovodnikov, 53:4 (2019),  502–507  mathnet  elib; Semiconductors, 53:4 (2019), 493–498 10
6. I. E. Tyschenko, E. D. Zhanaev, V. P. Popov, “Bonding energy of silicon and sapphire wafers at elevated temperatures of joining”, Fizika i Tekhnika Poluprovodnikov, 53:1 (2019),  65–69  mathnet  elib; Semiconductors, 53:1 (2019), 60–64 3
2018
7. K. V. Feklistov, A. G. Cherkov, V. P. Popov, L. I. Fedina, “Redistribution of erbium and oxygen recoil atoms and the structure of silicon thin surface layers formed by high-dose argon implantation through Er and SiO$_{2}$ surface films”, Fizika i Tekhnika Poluprovodnikov, 52:13 (2018),  1589–1596  mathnet  elib; Semiconductors, 52:13 (2018), 1696–1703
8. V. P. Popov, V. A. Antonov, V. I. Vdovin, “Positive charge in SOS heterostructures with interlayer silicon oxide”, Fizika i Tekhnika Poluprovodnikov, 52:10 (2018),  1220–1227  mathnet  elib; Semiconductors, 52:10 (2018), 1341–1348 10
2016
9. V. P. Popov, M. A. Ilnitskii, E. D. Zhanaev, A. V. Myakon'kikh, K. V. Rudenko, A. V. Glukhov, “Biosensor properties of SOI nanowire transistors with a PEALD Al$_{2}$O$_{3}$ dielectric protective layer”, Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  643–649  mathnet  elib; Semiconductors, 50:5 (2016), 632–638 16
2015
10. O. Naumova, E. G. Zaytseva, B. I. Fomin, M. A. Ilnitskii, V. P. Popov, “Density dependence of electron mobility in the accumulation mode for fully depleted SOI films”, Fizika i Tekhnika Poluprovodnikov, 49:10 (2015),  1360–1366  mathnet  elib; Semiconductors, 49:10 (2015), 1316–1322 9
11. K. V. Feklistov, D. S. Abramkin, V. I. Obodnikov, V. P. Popov, “Doping silicon with erbium by recoil implantation”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:16 (2015),  52–60  mathnet  elib; Tech. Phys. Lett., 41:8 (2015), 788–792 6
2014
12. V. P. Popov, M. A. Ilnitskii, O. Naumova, A. N. Nazarov, “Quantum corrections to threshold voltages for fully depleted SOI transistors with two independent gates”, Fizika i Tekhnika Poluprovodnikov, 48:10 (2014),  1348–1353  mathnet  elib; Semiconductors, 48:10 (2014), 1312–1317 6
13. I. E. Tyschenko, V. A. Volodin, V. V. Kozlovsky, V. P. Popov, “Effect of hydrostatic pressure during the annealing of silicon-on-insulator films implanted with a high hydrogen-ion dose”, Fizika i Tekhnika Poluprovodnikov, 48:10 (2014),  1339–1343  mathnet  elib; Semiconductors, 48:10 (2014), 1303–1307 1
14. I. E. Tyschenko, M. Voelskow, A. G. Cherkov, V. P. Popov, “Ion-beam synthesis of InSb nanocrystals in the buried SiO$_2$ layer of a silicon-on-insulator structure”, Fizika i Tekhnika Poluprovodnikov, 48:9 (2014),  1228–1233  mathnet  elib; Semiconductors, 48:9 (2014), 1196–1201 12
2013
15. I. E. Tyschenko, V. A. Volodin, M. Voelskow, A. G. Cherkov, V. P. Popov, “Crystallization induced by thermal annealing with millisecond pulses in silicon-on-insulator films implanted with high doses of hydrogen ions”, Fizika i Tekhnika Poluprovodnikov, 47:5 (2013),  591–597  mathnet  elib; Semiconductors, 47:5 (2013), 606–611 1
1992
16. G. A. Kachurin, I. E. Tyschenko, A. E. Plotnikov, V. P. Popov, “Growth of monocrystalline $\alpha\text{-Si}_{3}\text{N}_{4}$ in buried layers produced by low-intensity implantation of N$^{+}$ ions into heated silicon”, Fizika i Tekhnika Poluprovodnikov, 26:8 (1992),  1390–1393  mathnet
17. N. Kh. Talipov, V. P. Popov, V. G. Remesnik, Z. A. Nal'kina, “Effect of annealing under anode oxide on the variation of surface composition and conversion of conduction type for $p$-Cd$_{x}$Hg$_{1-x}$Te ($x\simeq0.2$) single crystals”, Fizika i Tekhnika Poluprovodnikov, 26:2 (1992),  310–317  mathnet
1986
18. R. Grettsshel', A. V. Dvurechenskii, V. P. Popov, “Crystalline-amorphous phase transition in heavily doped silicon”, Fizika Tverdogo Tela, 28:10 (1986),  3134–3136  mathnet
2012
19. A. L. Aseev, A. V. Dvurechenskii, I. G. Neizvestnyi, G. A. Kachurin, V. P. Popov, A. A. Gippius, V. N. Mordkovich, “Леонид Степанович Смирнов к 80-летию со дня рождения (1932–2011)”, Fizika i Tekhnika Poluprovodnikov, 46:6 (2012),  861–863  mathnet  elib

Organisations