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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
A. S. Bogolubskii, S. V. Gudina, V. N. Neverov, K. V. Turutkin, S. M. Podgornykh, N. G. Shelushinina, M. V. Yakunin, N. N. Mikhailov, S. A. Dvoretskii, “Quantum oscillations of magnetoresistance in HgCdTe/HgTe/HgCdTe heterostructures with inverted band spectrum”, Fizika Tverdogo Tela, 63:12 (2021), 1983–1993   |
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2020 |
| 2. |
V. N. Neverov, A. S. Bogolubskii, S. V. Gudina, S. M. Podgornykh, K. V. Turutkin, M. R. Popov, N. G. Shelushinina, M. V. Yakunin, N. N. Mikhailov, S. A. Dvoretsky, “Effective mass and $g$-factor of two-dimensional HgTe $\Gamma_8$-band electrons: Shubnikov–de Haas oscillations”, Fizika i Tekhnika Poluprovodnikov, 54:8 (2020), 830 ; Semiconductors, 54:8 (2020), 982–990 |
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2018 |
| 3. |
S. V. Gudina, Yu. G. Arapov, E. V. Ilchenko, V. N. Neverov, A. P. Savelyev, S. M. Podgornykh, N. G. Shelushinina, M. V. Yakunin, I. S. Vasil'evskii, A. N. Vinichenko, “Nonuniversal scaling behavior of conductivity peak widths in the quantum Hall effect in InGaAs/InAlAs structures”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1447–1454 ; Semiconductors, 52:12 (2018), 1551–1558 |
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| 4. |
S. V. Gudina, A. S. Bogolubskii, V. N. Neverov, N. G. Shelushinina, M. V. Yakunin, ““Extremum loop” model for the valence-band spectrum of a HgTe/HgCdTe quantum well with an inverted band structure in the semimetallic phase”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1291–1294 ; Semiconductors, 52:11 (2018), 1403–1406 |
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| 5. |
S. V. Gudina, V. N. Neverov, E. V. Ilchenko, A. S. Bogolubskii, G. I. Kharus, N. G. Shelushinina, S. M. Podgornykh, M. V. Yakunin, N. N. Mikhailov, S. A. Dvoretskii, “Electron effective mass and $g$ factor in wide hgte quantum wells”, Fizika i Tekhnika Poluprovodnikov, 52:1 (2018), 16–22 ; Semiconductors, 52:1 (2018), 12–18 |
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2017 |
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S. V. Gudina, V. N. Neverov, E. V. Ilchenko, A. S. Bogolubskii, G. I. Kharus, N. G. Shelushinina, S. M. Podgornykh, M. V. Yakunin, N. N. Mikhailov, S. A. Dvoretskii, “Electron effective mass and $g$ factor in wide HgTe quantum wells”, Fizika i Tekhnika Poluprovodnikov, 51:12 (2017), 1630 ; Semiconductors, 52:12 (2018), 12–18 |
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| 7. |
Yu. G. Arapov, S. V. Gudina, A. S. Klepikova, V. N. Neverov, G. I. Harus, N. G. Shelushinina, M. V. Yakunin, “The temperature dependence of the conductivity peak values in the single and the double quantum well nanostructures $n$-InGaAs/GaAs after IR-illumination”, Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 281 ; Semiconductors, 51:2 (2017), 272–278 |
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2016 |
| 8. |
S. V. Gudina, Yu. G. Arapov, A. P. Savelyev, V. N. Neverov, S. M. Podgornykh, N. G. Shelushinina, M. V. Yakunin, I. S. Vasil'evskii, A. N. Vinichenko, “Quantum Hall effect and hopping conductivity in $n$-InGaAs/InAlAs nanoheterostructures”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1669–1674 ; Semiconductors, 50:12 (2016), 1641–1646 |
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2015 |
| 9. |
Yu. G. Arapov, S. V. Gudina, V. N. Neverov, S. M. Podgornykh, M. R. Popov, G. I. Kharus, N. G. Shelushinina, M. V. Yakunin, N. N. Mikhailov, S. A. Dvoretskii, “Temperature scaling in the quantum-Hall-effect regime in a HgTe quantum well with an inverted energy spectrum”, Fizika i Tekhnika Poluprovodnikov, 49:12 (2015), 1593–1597 ; Semiconductors, 49:12 (2015), 1545–1549 |
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| 10. |
Yu. G. Arapov, S. V. Gudina, A. S. Klepikova, V. N. Neverov, N. G. Shelushinina, M. V. Yakunin, “Electron-electron interaction and the universality of critical indices for quantum Hall effect plateau-plateau transitions in $n$-InGaAs/GaAs nanostructures with double quantum wells”, Fizika i Tekhnika Poluprovodnikov, 49:2 (2015), 186–191 ; Semiconductors, 49:2 (2015), 181–186 |
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2013 |
| 11. |
Yu. G. Arapov, S. V. Gudina, A. S. Klepikova, V. N. Neverov, S. M. Podgornykh, M. V. Yakunin, B. N. Zvonkov, “Tunneling effects in tilted magnetic fields in $n$-InGaAs/GaAs structures with strongly coupled double quantum wells”, Fizika i Tekhnika Poluprovodnikov, 47:11 (2013), 1457–1461 ; Semiconductors, 47:11 (2013), 1447–1451 |
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