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Publications in Math-Net.Ru |
Citations |
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2025 |
| 1. |
M. A. Lobaev, D. B. Radishev, A. L. Vikharev, A. M. Gorbachev, S. A. Bogdanov, V. A. Isaev, S. A. Kraev, A. I. Okhapkin, E. A. Arkhipova, P. A. Yunin, N. V. Vostokov, E. V. Demidov, M. N. Drozdov, “CVD diamond structures with a $p$–$n$ junction – diodes and transistors”, Zhurnal Tekhnicheskoi Fiziki, 95:3 (2025), 540–548   |
| 2. |
M. A. Lobaev, D. B. Radishev, A. L. Vikharev, A. M. Gorbachev, S. A. Bogdanov, V. A. Isaev, V. A. Kukushkin, S. A. Kraev, A. I. Okhapkin, E. A. Arkhipova, E. V. Demidov, M. N. Drozdov, “Study of photo and electroluminescence of nitrogen-related color centers in a diamond $p$–$i$–$n$ diode”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:10 (2025), 48–51 |
| 3. |
M. A. Lobaev, D. B. Radishev, A. L. Vikharev, A. M. Gorbachev, S. A. Bogdanov, V. A. Isaev, V. A. Kukushkin, S. A. Kraev, A. I. Okhapkin, E. A. Arkhipova, E. V. Demidov, M. N. Drozdov, R. I. Khaibullin, “Electroluminescence of germanium-vacancy color centers in a diamond $p$–$i$–$n$ diode”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:8 (2025), 3–6 |
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2024 |
| 4. |
E. A. Arkhipova, M. N. Drozdov, S. A. Kraev, O. I. Khrykin, A. I. Okhapkin, M. A. Lobaev, A. L. Vikharev, V. A. Isaev, S. A. Bogdanov, “Non-annealed ohmic contacts with reduced resistance to $p$- and $n$-type epitaxial layers of diamond and their thermal stability”, Fizika i Tekhnika Poluprovodnikov, 58:8 (2024), 409–414 |
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2023 |
| 5. |
V. A. Kukushkin, M. A. Lobaev, A. L. Vikharev, A. M. Gorbachev, D. B. Radishev, E. A. Arkhipova, M. N. Drozdov, Yu. V. Kukushkin, V. A. Isaev, S. A. Bogdanov, “Crossover between Mott’s and Arrhenius’ laws in the temperature dependence of resistivity of highly boron-doped delta-layers in artificial diamond”, Fizika i Tekhnika Poluprovodnikov, 57:4 (2023), 259–264 |
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2022 |
| 6. |
Mikhail A. Lobaev, Anatoly L. Vikharev, Aleksey M. Gorbachev, Dmitry B. Radishev, Ekaterina A. Arkhipova, Mikhail N. Drozdov, Vladimir A. Isaev, Sergey A. Bogdanov, Vladimir A. Kukushkin, “Investigation of boron-doped delta layers in CVD diamond grown on single-sector HPHT substrates”, Nanosystems: Physics, Chemistry, Mathematics, 13:5 (2022), 578–584 |
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| 7. |
O. A. Ivanov, A. L. Vikharev, S. A. Bogdanov, N. M. Ovechkin, V. P. Loginov, Yu. A. Yakovlev, A. Ya. Vul', “Investigation of the effect of hydrogen content on the conductivity of nanocrystalline diamond films”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:2 (2022), 37–40 |
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2021 |
| 8. |
A. L. Vikharev, S. A. Bogdanov, N. M. Ovechkin, O. A. Ivanov, D. B. Radishev, A. M. Gorbachev, M. A. Lobaev, A. Ya. Vul', A. T. Dideikin, S. A. Kraev, S. A. Korolev, “Study of undoped nanocrystalline diamond films grown by microwave plasma-assisted chemical vapor deposition”, Fizika i Tekhnika Poluprovodnikov, 55:1 (2021), 49–58 ; Semiconductors, 55:1 (2021), 66–75 |
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2020 |
| 9. |
A. M. Gorbachev, M. A. Lobaev, D. B. Radishev, A. L. Vikharev, S. A. Bogdanov, S. V. Bolshedvorskii, A. I. Zeleneev, V. V. Soshenko, A. V. Akimov, M. N. Drozdov, V. A. Isaev, “Formation of multilayered nanostructures of NV sites in single-crystal CVD diamond”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:13 (2020), 19–23 ; Tech. Phys. Lett., 46:7 (2020), 641–645 |
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| 10. |
M. N. Drozdov, E. A. Arkhipova, Yu. N. Drozdov, S. A. Kraev, V. I. Shashkin, A. E. Parafin, M. A. Lobaev, A. L. Vikharev, A. M. Gorbachev, D. B. Radishev, V. A. Isaev, S. A. Bogdanov, “The use of pulsed laser annealing to form ohmic Mo/Ti contacts to diamond”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:11 (2020), 34–38 ; Tech. Phys. Lett., 46:6 (2020), 551–555 |
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2019 |
| 11. |
M. N. Drozdov, E. V. Demidov, Yu. N. Drozdov, S. A. Kraev, V. I. Shashkin, E. A. Arkhipova, M. A. Lobaev, A. L. Vikharev, A. M. Gorbachev, D. B. Radishev, V. A. Isaev, S. A. Bogdanov, “Formation of low-resistivity Au/Mo/Ti ohmic contacts to $p$-diamond epitaxial layers”, Zhurnal Tekhnicheskoi Fiziki, 89:12 (2019), 1923–1932 ; Tech. Phys., 64:12 (2019), 1827–1836 |
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| 12. |
E. A. Arkhipova, E. V. Demidov, M. N. Drozdov, S. A. Kraev, V. I. Shashkin, M. A. Lobaev, A. L. Vikharev, A. M. Gorbachev, D. B. Radishev, V. A. Isaev, S. A. Bogdanov, “Ohmic contacts to CVD diamond with boron-doped $\delta$ layers”, Fizika i Tekhnika Poluprovodnikov, 53:10 (2019), 1386–1390 ; Semiconductors, 53:10 (2019), 1348–1352 |
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| 13. |
S. A. Bogdanov, A. M. Gorbachev, D. B. Radishev, A. L. Vikharev, M. A. Lobaev, S. A. Gusev, D. A. Tatarskii, S. V. Bolshedvorskii, A. V. Akimov, V. V. Chernov, “Creation of localized NV center ensembles in CVD diamond by electron beam irradiation”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:6 (2019), 36–39 ; Tech. Phys. Lett., 45:3 (2019), 281–284 |
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| 14. |
S. A. Bogdanov, A. M. Gorbachev, D. B. Radishev, A. L. Vikharev, M. A. Lobaev, “Contraction of microwave discharge in the reactor for chemical vapor deposition of diamond”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:3 (2019), 30–33 ; Tech. Phys. Lett., 45:2 (2019), 89–92 |
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2017 |
| 15. |
E. A. Surovegina, E. V. Demidov, M. N. Drozdov, A. V. Murel, O. I. Khrykin, V. I. Shashkin, M. A. Lobaev, A. M. Gorbachev, A. L. Viharev, S. A. Bogdanov, V. A. Isaev, A. B. Muchnikov, V. V. Chernov, D. B. Radishev, J. E. Batler, “Erratum to: “Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron””, Fizika i Tekhnika Poluprovodnikov, 51:8 (2017), 1151 ; Semiconductors, 51:8 (2017), 1106 |
| 16. |
V. A. Kukushkin, D. B. Radishev, M. A. Lobaev, S. A. Bogdanov, A. V. Zdoroveyshchev, I. I. Chunin, “A CVD diamond-based photodetector for the visible and near-IR spectral range”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:24 (2017), 65–71 ; Tech. Phys. Lett., 43:12 (2017), 1121–1123 |
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2016 |
| 17. |
P. A. Yunin, Yu. N. Drozdov, V. V. Chernov, V. A. Isaev, S. A. Bogdanov, A. B. Muchnikov, “Formation of singular (001) terraces on the surface of single-crystal HPHT diamond substrates”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1647–1651 ; Semiconductors, 50:12 (2016), 1622–1625 |
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| 18. |
E. A. Surovegina, E. V. Demidov, M. N. Drozdov, A. V. Murel, O. I. Khrykin, V. I. Shashkin, M. A. Lobaev, A. M. Gorbachev, A. L. Vikharev, S. A. Bogdanov, V. A. Isaev, A. B. Muchnikov, V. V. Chernov, D. B. Radishev, D. E. Batler, “Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1595–1598 ; Semiconductors, 50:12 (2016), 1569–1573 |
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2015 |
| 19. |
O. I. Khrykin, Yu. N. Drozdov, M. N. Drozdov, P. A. Yunin, V. I. Shashkin, S. A. Bogdanov, A. B. Muchnikov, A. L. Vikharev, D. B. Radishev, “Single-crystal GaN/AlN layers on CVD diamond”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:19 (2015), 73–80 ; Tech. Phys. Lett., 41:10 (2015), 954–956 |
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