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Publications in Math-Net.Ru |
Citations |
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2024 |
| 1. |
I. A. Krasnova, E. R. Zakirov, G. Yu. Sidorov, I. V. Sabinina, “Low-temperature surface treatments of CdHgTe using the PE-ALD method before HfO$_2$ deposition”, Fizika i Tekhnika Poluprovodnikov, 58:3 (2024), 120–125   |
| 2. |
E. R. Zakirov, G. Yu. Sidorov, I. A. Krasnova, V. A. Golyashov, S. A. Ponomarev, O. E. Tereshchenko, I. V. Marchishin, “Passivation of CdHgTe surface using low-temperature plasma-enhanced atomic layer deposition of HfO$_2$”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:16 (2024), 7–10 |
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2023 |
| 3. |
Yu. G. Sidorov, G. Yu. Sidorov, V. S. Varavin, “Water – a source electrically active centres in CdHgTe”, Fizika i Tekhnika Poluprovodnikov, 57:2 (2023), 114–119 |
| 4. |
A. E. Klimov, I. O. Akhundov, V. A. Golyashov, D. V. Gorshkov, D. V. Ishchenko, G. Yu. Sidorov, N. S. Pschin, S. P. Suprun, A. S. Tarasov, E. V. Fedosenko, O. E. Tereshchenko, “Photosensitivity of a metal-insulator-semiconductor field-effect transistor based on PbSnTe:In film with a composition close to the bands inversion”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:3 (2023), 22–25 |
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2022 |
| 5. |
E. R. Zakirov, V. G. Kesler, G. Yu. Sidorov, D. V. Gorshkov, A. P. Kovchavtsev, “Studying C–V characteristics of MIS structures with ALD Al$_2$O$_3$ on $n$- and $p$-CdHgTe stabilized with ultra-thin native oxide”, Fizika i Tekhnika Poluprovodnikov, 56:9 (2022), 915–921 |
| 6. |
A. E. Klimov, V. A. Golyashov, D. V. Gorshkov, E. V. Matyushenko, I. G. Neizvestnyi, G. Yu. Sidorov, N. S. Pschin, S. P. Suprun, O. E. Tereshchenko, “MIS transistor based on PbSnTe : In film with an Al$_2$O$_3$ gate dielectric”, Fizika i Tekhnika Poluprovodnikov, 56:2 (2022), 243–249 |
| 7. |
D. V. Gorshkov, E. R. Zakirov, G. Yu. Sidorov, I. V. Sabinina, D. V. Marin, “Investigation of metal–insulator–semiconductor structure based on CdHgTe and HfO$_2$”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:19 (2022), 16–19 |
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2021 |
| 8. |
G. Yu. Sidorov, Yu. G. Sidorov, V. A. Shvets, V. S. Varavin, “Formation of acceptor centers in CdHgTe as a result of water and heat treatments”, Fizika i Tekhnika Poluprovodnikov, 55:4 (2021), 331–335 ; Semiconductors, 55:5 (2021), 461–465 |
| 9. |
A. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadukh, S. A. Dvoretskii, N. N. Mikhailov, G. Yu. Sidorov, M. V. Yakushev, “Admittance of MIS structures based on $nBn$ systems of epitaxial HgCdTe for detection in the 3–5 $\mu$m spectral range”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:12 (2021), 34–37 ; Tech. Phys. Lett., 47:9 (2021), 629–632 |
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| 10. |
A. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadukh, V. S. Varavin, S. A. Dvoretskii, N. N. Mikhailov, G. Yu. Sidorov, M. V. Yakushev, D. V. Marin, “The effect of As$^+$ ion implantation and annealing on the electrical properties of near-surface layers in graded-gap $n$-Hg$_{0.78}$Cd$_{0.22}$Te films”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:4 (2021), 33–35 ; Tech. Phys. Lett., 47:2 (2021), 189–192 |
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2020 |
| 11. |
A. E. Klimov, A. N. Akimov, I. O. Akhundov, V. A. Golyashov, D. V. Gorshkov, D. V. Ishchenko, E. V. Matyushenko, I. G. Neizvestnyi, G. Yu. Sidorov, S. P. Suprun, A. S. Tarasov, O. E. Tereshchenko, V. S. Epov, “Features of MIS structures based on insulating PbSnTe:In films with the composition in the vicinity of the band inversion related to their ferroelectric properties”, Fizika i Tekhnika Poluprovodnikov, 54:10 (2020), 1122–1128 ; Semiconductors, 54:10 (2020), 1325–1331 |
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| 12. |
D. V. Gorshkov, G. Yu. Sidorov, I. V. Sabinina, Yu. G. Sidorov, D. V. Marin, M. V. Yakushev, “The effect of the growth temperature on the passivating properties of the Al$_{2}$O$_{3}$ films formed by atomic layer deposition on the CdHgTe surface”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:15 (2020), 14–17 ; Tech. Phys. Lett., 46:8 (2020), 741–744 |
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| 13. |
A. P. Kovchavtsev, M. S. Aksenov, A. E. Nastovjak, N. A. Valisheva, D. V. Gorshkov, G. Yu. Sidorov, D. V. Dmitriev, “Study of the density of interface states at the insulator/In$_{0.52}$Al$_{0.48}$As interface”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:10 (2020), 10–13 ; Tech. Phys. Lett., 46:5 (2020), 469–472 |
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2019 |
| 14. |
A. E. Klimov, A. N. Akimov, I. O. Akhundov, V. A. Golyashov, D. V. Gorshkov, D. V. Ishchenko, G. Yu. Sidorov, S. P. Suprun, A. S. Tarasov, V. S. Epov, O. E. Tereshchenko, “Surface ñonductivity dynamics in PbSnTe : In films in the vicinity of a band inversion”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1207–1211 ; Semiconductors, 53:9 (2019), 1182–1186 |
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2016 |
| 15. |
V. S. Varavin, V. V. Vasilyev, A. A. Guzev, S. A. Dvoretskii, A. P. Kovchavtsev, D. V. Marin, I. V. Sabinina, Yu. G. Sidorov, G. Yu. Sidorov, A. V. Tsarenko, M. V. Yakushev, “CdHgTe heterostructures for new-generation IR photodetectors operating at elevated temperatures”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1652–1656 ; Semiconductors, 50:12 (2016), 1626–1629 |
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