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Publications in Math-Net.Ru |
Citations |
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2022 |
| 1. |
N. F. Zikrillaev, S. V. Koveshnikov, S. B. Isamov, B. A. Abduraxmanov, G. A. Kushiyev, “Spectral dependende of the photoconductivity of varizon structures of the type Ge$_x$Si$_{1-x}$, obtained by diffusion technology”, Fizika i Tekhnika Poluprovodnikov, 56:5 (2022), 495–497   |
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| 2. |
M. K. Bahadirkhanov, N. F. Zikrillaev, S. B. Isamov, Kh. S. Turekeev, S. A. Valiev, “Effect of the presence of a sufficiently high phosphorus concentration on the concentration distribution of gallium in silicon”, Fizika i Tekhnika Poluprovodnikov, 56:2 (2022), 199–203 |
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2021 |
| 3. |
M. K. Bakhadyrkhanov, S. B. Isamov, “Physical foundations of the formation of the silicon-based heterovarizonic structure”, Zhurnal Tekhnicheskoi Fiziki, 91:11 (2021), 1678–1684 |
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| 4. |
M. K. Bakhadyrkhanov, S. B. Isamov, N. F. Zikrillaev, M. O. Tursunov, “Anomalous photoelectric phenomena in silicon with nanoclusters of manganese atoms”, Fizika i Tekhnika Poluprovodnikov, 55:6 (2021), 489–492 ; Semiconductors, 55:6 (2021), 542–545 |
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2020 |
| 5. |
M. K. Bakhadyrkhanov, S. B. Isamov, Sh. N. Ibodullaev, S. V. Koveshnikov, N. Norkulov, “Electric field-stimulated photoconductivity in silicon with manganese atom nanoclusters in the range of 3–8 $\mu$m”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:23 (2020), 37–40 ; Tech. Phys. Lett., 46:12 (2020), 1192–1195 |
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2019 |
| 6. |
M. K. Bakhadyrkhanov, H. M. Iliev, G. Kh. Mavlonov, K. S. Ayupov, S. B. Isamov, S. A. Tachilin, “Silicon with magnetic nanoclusters of manganese atoms as a new ferromagnetic material”, Zhurnal Tekhnicheskoi Fiziki, 89:3 (2019), 421–425 ; Tech. Phys., 64:3 (2019), 385–388 |
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| 7. |
M. K. Bakhadyrkhanov, S. B. Isamov, Z. T. Kenzhaev, S. V. Koveshnikov, “Studying the effect of doping with nickel on silicon-based solar cells with a deep $p$–$n$-junction”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:19 (2019), 3–6 ; Tech. Phys. Lett., 45:10 (2019), 959–962 |
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2016 |
| 8. |
M. K. Bakhadyrkhanov, S. B. Isamov, “IR photodetectors operating under background illumination”, Zhurnal Tekhnicheskoi Fiziki, 86:3 (2016), 140–142 ; Tech. Phys., 61:3 (2016), 458–460 |
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2015 |
| 9. |
M. K. Bakhadyrkhanov, S. B. Isamov, H. M. Iliev, A. U. Kamalov, “Anomalously long lifetime of holes in silicon with nanoclusters of manganese atoms”, Fizika i Tekhnika Poluprovodnikov, 49:10 (2015), 1376–1378 ; Semiconductors, 49:10 (2015), 1332–1334 |
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