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Publications in Math-Net.Ru |
Citations |
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2025 |
| 1. |
A. V. Kruglov, D. A. Serov, A. I. Belov, M. N. Koryazhkina, I. N. Antonov, S. Yu. Zubkov, R. N. Kriukov, D. A. Antonov, D. O. Filatov, V. A. Khabibulova, A. N. Mikhaylov, O. N. Gorshkov, “Influence of oxygen vacancy concentration on the resistive switching parameters of ZrO$_2$(Y)-based memristor structures”, Zhurnal Tekhnicheskoi Fiziki, 95:9 (2025), 1733–1743   |
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2024 |
| 2. |
A. V. Kruglov, D. A. Serov, A. I. Belov, M. N. Koryazhkina, I. N. Antonov, S. Yu. Zubkov, R. N. Kriukov, A. N. Mikhaylov, D. O. Filatov, O. N. Gorshkov, “Memristors for non-volatile resistive memory based on an Al$_2$O$_3$/ZrO$_2$(Y) dielectric bilayer”, Zhurnal Tekhnicheskoi Fiziki, 94:11 (2024), 1833–1842 |
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2022 |
| 3. |
M. N. Koryazhkina, D. O. Filatov, M. E. Shenina, I. N. Antonov, A. V. Kruglov, A. V. Ershov, A. P. Gorshkov, S. A. Denisov, V. Yu. Chalkov, V. G. Shengurov, “Investigation of the effect of optical radiation on resistive switching of MIS-structures based on ZrO$_2$(Y) on Si(001) substrates with Ge nanoislands”, Fizika i Tekhnika Poluprovodnikov, 56:8 (2022), 723–727 |
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2021 |
| 4. |
D. O. Filatov, M. E. Shenina, I. A. Rozhentsov, M. N. Koryazhkina, A. S. Novikov, I. N. Antonov, A. V. Ershov, A. P. Gorshkov, O. N. Gorshkov, “Effect of optical illumination on resistive switching in MOS stacks based on ZrO$_2$(Y) films with Au nanoparticles”, Fizika i Tekhnika Poluprovodnikov, 55:9 (2021), 754–757 ; Semiconductors, 55:9 (2021), 731–734 |
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2019 |
| 5. |
D. O. Filatov, M. N. Koryazhkina, D. A. Antonov, I. N. Antonov, D. A. Liskin, M. A. Ryabova, O. N. Gorshkov, “Atomic-force microscopy of resistive nonstationary signal switching in ZrO$_{2}$(Y) films”, Zhurnal Tekhnicheskoi Fiziki, 89:11 (2019), 1669–1673 ; Tech. Phys., 64:11 (2019), 1579–1583 |
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| 6. |
S. V. Tikhov, O. N. Gorshkov, A. I. Belov, I. N. Antonov, A. I. Morozov, M. N. Koryazhkina, A. N. Mikhaylov, “Mechanisms of current transport and resistive switching in capacitors with yttria-stabilized hafnia layers”, Zhurnal Tekhnicheskoi Fiziki, 89:6 (2019), 927–934 ; Tech. Phys., 64:6 (2019), 873–880 |
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| 7. |
E. V. Okulich, M. N. Koryazhkina, D. S. Korolev, A. I. Belov, M. E. Shenina, A. N. Mikhaylov, D. I. Tetelbaum, I. N. Antonov, Yu. A. Dudin, “The effect of irradiation with Si$^{+}$ ions on the resistive switching of memristive structures based on yttria stabilized zirconia”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:14 (2019), 3–6 ; Tech. Phys. Lett., 45:7 (2019), 690–693 |
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2016 |
| 8. |
M. N. Koryazhkina, S. V. Tikhov, O. N. Gorshkov, A. P. Kasatkin, I. N. Antonov, “Electrical and photoelectric properties of Si-based metal–insulator–semiconductor structures with Au nanoparticles at the insulator–semiconductor interface”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1639–1643 ; Semiconductors, 50:12 (2016), 1614–1618 |
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| 9. |
S. V. Tikhov, O. N. Gorshkov, M. N. Koryazhkina, A. P. Kasatkin, I. N. Antonov, O. V. Vikhrova, A. I. Morozov, “Physical properties of metal–insulator–semiconductor structures based on $n$-GaAs with InAs quantum dots deposited onto the surface of an $n$-GaAs layer”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1615–1619 ; Semiconductors, 50:12 (2016), 1589–1594 |
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| 10. |
S. V. Tikhov, O. N. Gorshkov, M. N. Koryazhkina, I. N. Antonov, A. P. Kasatkin, “Light-induced resistive switching in silicon-based metal–insulator–semiconductor structures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:10 (2016), 78–84 ; Tech. Phys. Lett., 42:5 (2016), 536–538 |
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| 11. |
S. V. Tikhov, O. N. Gorshkov, M. N. Koryazhkina, I. N. Antonov, A. P. Kasatkin, “Specific features of nonequilibrium depletion accompanied by the trapping of minority carriers by surface states in metal–insulator–semiconductor structures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:3 (2016), 52–60 ; Tech. Phys. Lett., 42:2 (2016), 138–142 |
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2014 |
| 12. |
S. V. Tikhov, O. N. Gorshkov, I. N. Antonov, A. P. Kasatkin, M. N. Koryazhkina, “The forming process in resistive-memory elements based on metal–insulator–semiconductor structures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:19 (2014), 18–26 ; Tech. Phys. Lett., 40:10 (2014), 837–840 |
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| 13. |
S. V. Tikhov, O. N. Gorshkov, D. A. Pavlov, I. N. Antonov, A. I. Bobrov, A. P. Kasatkin, M. N. Koryazhkina, M. E. Shenina, “Capacitors with nonlinear characteristics based on stabilized zirconia with built-in gold nanoparticles”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:9 (2014), 9–16 ; Tech. Phys. Lett., 40:5 (2014), 369–371 |
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2013 |
| 14. |
S. V. Tikhov, O. N. Gorshkov, I. N. Antonov, A. P. Kasatkin, M. N. Koryazhkina, “Features of Fermi-level pinning at the interface of Al$_{0.3}$Ga$_{0.7}$As with anodic oxide and stabilized zirconia”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:23 (2013), 72–79 ; Tech. Phys. Lett., 39:12 (2013), 1064–1067 |
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