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Publications in Math-Net.Ru |
Citations |
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2025 |
| 1. |
K. S. Zhidyaev, A. B. Chigineva, N. V. Baidus, I. V. Samartsev, A. V. Kudrin, “Influence of emitter region doping level on the turn-on dynamics of low-voltage GaAs dynistors”, Fizika i Tekhnika Poluprovodnikov, 59:1 (2025), 48–52  |
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2024 |
| 2. |
I. V. Samartsev, N. V. Baidus, S. Yu. Zubkov, D. M. Balyasnikov, K. S. Zhidyaev, A. V. Zdoroveyshchev, A. I. Bobrov, K. V. Sidorenko, A. V. Nezhdanov, D. S. Klement'ev, “Metamorphic InGaAs photodiode with wavelength 1.55 $\mu$m, grown on GaAs substrate”, Fizika i Tekhnika Poluprovodnikov, 58:12 (2024), 709–713  |
| 3. |
K. S. Zhidyaev, A. B. Chigineva, N. V. Baidus, I. V. Samartsev, A. V. Kudrin, “Influence of strip mesastructure topology on a low-voltage GaAs thyristor main parameters”, Fizika i Tekhnika Poluprovodnikov, 58:3 (2024), 156–160 |
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2023 |
| 4. |
I. V. Samartsev, B. N. Zvonkov, N. V. Baidus, A. B. Chigineva, K. S. Zhidyaev, N. V. Dikareva, A. V. Zdoroveyshchev, A. V. Rykov, S. M. Plankina, A. V. Nezhdanov, A. V. Ershov, “MOCVD growth of InGaAs metamorphic heterostructures for photodiodes with low dark current”, Fizika i Tekhnika Poluprovodnikov, 57:6 (2023), 495–500 |
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2022 |
| 5. |
A. B. Chigineva, N. V. Baidus, S. M. Nekorkin, K. S. Zhidyaev, V. E. Kotomina, I. V. Samartsev, “Influence of chemical treatment and surface topology on the blocking voltage of GaAs thyristor mesastructures, grown by MOCVD”, Fizika i Tekhnika Poluprovodnikov, 56:1 (2022), 134–138 |
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2021 |
| 6. |
M. V. Dorokhin, B. N. Zvonkov, P. B. Demina, N. V. Dikareva, A. V. Zdoroveyshchev, A. V. Kudrin, O. V. Vikhrova, I. V. Samartsev, S. M. Nekorkin, “Methods for switching radiation polarization in GaAs laser diodes”, Zhurnal Tekhnicheskoi Fiziki, 91:9 (2021), 1409–1414 ; Tech. Phys., 66:11 (2021), 1194–1199  |
| 7. |
A. V. Rykov, R. N. Kriukov, I. V. Samartsev, P. A. Yunin, V. G. Shengurov, A. V. Zaitsev, N. V. Baidus, “Effect of the algaas seed layer composition on antiphase domains formation in (Al)GaAs structures grown by vapor-phase epitaxy on Ge/Si(100) substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:8 (2021), 37–40 ; Tech. Phys. Lett., 47:5 (2021), 413–416 |
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2019 |
| 8. |
N. V. Dikareva, B. N. Zvonkov, I. V. Samartsev, S. M. Nekorkin, N. V. Baidus, A. A. Dubinov, “GaAs-based laser diode with InGaAs waveguide quantum wells”, Fizika i Tekhnika Poluprovodnikov, 53:12 (2019), 1718–1720 ; Semiconductors, 53:12 (2019), 1709–1711 |
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2018 |
| 9. |
I. V. Samartsev, S. M. Nekorkin, B. N. Zvonkov, V. Ya. Aleshkin, A. A. Dubinov, I. Yu. Pashen'kin, N. V. Dikareva, A. B. Chigineva, “Photodetectors with an InGaP active region and InGaP metamorphic buffer layer grown on GaAs substrates”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1460–1463 ; Semiconductors, 52:12 (2018), 1564–1567 |
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| 10. |
V. Ya. Aleshkin, N. V. Baidus, O. V. Vikhrova, A. A. Dubinov, B. N. Zvonkov, Z. F. Krasil'nik, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Novikov, A. V. Rykov, I. V. Samartsev, D. V. Yurasov, “Stimulated emission at 1.3-$\mu$m wavelength in metamorphic InGaAs/InGaAsP structure with quantum wells grown on Ge/Si (001) substrate”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:16 (2018), 67–74 ; Tech. Phys. Lett., 44:8 (2018), 735–738 |
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2017 |
| 11. |
V. Ya. Aleshkin, N. V. Baidus, A. A. Dubinov, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Novikov, A. V. Rykov, I. V. Samartsev, A. G. Fefelov, D. V. Yurasov, Z. F. Krasil'nik, “Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1530–1533 ; Semiconductors, 51:11 (2017), 1477–1480 |
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2015 |
| 12. |
I. V. Samartsev, V. Ya. Aleshkin, N. V. Dikareva, A. A. Dubinov, B. N. Zvonkov, D. A. Kolpakov, S. M. Nekorkin, “Optimization of InGaP/GaAs/InGaAs heterolasers with tunnel-coupled waveguides”, Fizika i Tekhnika Poluprovodnikov, 49:12 (2015), 1619–1622 ; Semiconductors, 49:12 (2015), 1571–1574 |
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