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Publications in Math-Net.Ru |
Citations |
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2025 |
| 1. |
A. V. Aladov, A. L. Zakhgeim, A. E. Ivanov, A. A. Onushchenko, A. E. Chernyakov, M. Z. Shvarts, “Фотолюминесценция квантовых точек PbS в матрице неорганического стекла при возбуждении светодиодами: спектры и квантовый выход”, Optics and Spectroscopy, 133:10 (2025), 1068–1070  |
| 2. |
E. I. Shabunina, N. M. Shmidt, A. E. Chernyakov, N. A. Talnishnikh, A. L. Zakhgeim, A. E. Ivanov, L. A. Aleksanyan, A. Ya. Polyakov, “Reduction of external quantum efficiency of ultraviolet LEDs caused by overdoping of barriers with silicon”, Fizika i Tekhnika Poluprovodnikov, 59:7 (2025), 397–401 |
| 3. |
S. G. Terekhin, О. L. Vlasova, A. E. Chernyakov, Ya. A. Zabrodskaya, A. V. Aladov, “Оценка изменения функционального состояния человека с помощью методики критической частоты слияния мельканий: особенности светового воздействия и видов нагрузки”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:18 (2025), 13–15 |
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2024 |
| 4. |
A. L. Zakhgeim, A. E. Ivanov, A. E. Chernyakov, L. A. Aleksanyan, A. Ya. Polyakov, “Near-field radiation and the effect of non-uniformity of current density distribution in AlInGaN micro-leds”, Optics and Spectroscopy, 132:12 (2024), 1236–1239  |
| 5. |
S. G. Terekhin, L. T. Naurzbaeva, A. E. Chernyakov, A. V. Aladov, “The study of the impact of test-based and game-based intellectual workloads on human functional state”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:23 (2024), 62–64 |
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2023 |
| 6. |
A. L. Zakhgeim, A. A. Klimov, T. S. Lukhmyrina, B. A. Matveev, A. E. Chernyakov, “Thermal resistance of LEDs based on a narrow-gap InAsSb solid solution”, Optics and Spectroscopy, 131:11 (2023), 1502–1504 |
| 7. |
A. L. Zakhgeim, S. A. Karandashov, A. A. Klimov, R. È. Kunkov, T. S. Lukhmyrina, B. A. Matveev, M. A. Remennyi, A. A. Usikova, A. E. Chernyakov, “On heating mechanisms in LEDs based on $p$-InAsSbP/$n$-InAs(Sb)”, Fizika i Tekhnika Poluprovodnikov, 57:1 (2023), 42–52 |
| 8. |
S. A. Kukushkin, L. K. Markov, A. V. Osipov, G. V. Svyatets, A. E. Chernyakov, S. I. Pavlov, “Thermal conductivity of hybrid SiC/Si substrates for the growth of LED heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:14 (2023), 19–21 |
| 9. |
A. L. Zakhgeim, A. E. Ivanov, A. E. Chernyakov, “The electro-thermo-optical characteristics and limiting energy capabilities of high-power deep ultraviolet light emitting diodes $\lambda\approx$ 270 nm)”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:9 (2023), 17–20 |
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2022 |
| 10. |
A. L. Zakhgeim, A. V. Aladov, A. E. Ivanov, N. A. Talnishnikh, A. E. Chernyakov, “The limiting energy capabilities of high-power AlInGaN LEDs”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:13 (2022), 33–36 |
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2021 |
| 11. |
A. L. Zakhgeim, A. E. Ivanov, A. E. Chernyakov, “Features of operation of high-power AlInGaN LEDs at high pulse currents”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:16 (2021), 32–35 ; Tech. Phys. Lett., 47:11 (2021), 834–837 |
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2020 |
| 12. |
N. M. Shmidt, E. I. Shabunina, A. E. Chernyakov, A. E. Ivanov, N. А. Talnishnikh, A. L. Zakhgeim, “Temperature-dependent decrease in efficiency in power blue InGaN/GaN LEDs”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:24 (2020), 45–48 ; Tech. Phys. Lett., 46:12 (2020), 1253–1256 |
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2018 |
| 13. |
V. V. Emtsev, E. V. Gushchina, V. N. Petrov, N. A. Talnishnikh, A. E. Chernyakov, E. I. Shabunina, N. M. Shmidt, A. S. Usikov, A. P. Kartashova, A. A. Zybin, V. V. Kozlovsky, M. F. Kudoyarov, A. V. Sakharov, G. A. Oganesyan, D. S. Poloskin, V. V. Lundin, “Diversity of properties of device structures based on group-III nitrides, related to modification of the fractal-percolation system”, Fizika i Tekhnika Poluprovodnikov, 52:7 (2018), 804–811 ; Semiconductors, 52:7 (2018), 942–949 |
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2017 |
| 14. |
A. L. Zakhgeim, N. D. Il'inskaya, S. A. Karandashov, A. A. Lavrov, B. A. Matveev, M. A. Remennyi, N. M. Stus, A. A. Usikova, A. E. Chernyakov, “Spatial redistribution of radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures”, Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 269–275 ; Semiconductors, 51:2 (2017), 260–266 |
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2016 |
| 15. |
V. N. Petrov, V. G. Sidorov, N. A. Talnishnikh, A. E. Chernyakov, E. I. Shabunina, N. M. Shmidt, A. S. Usikov, H. Helava, Yu. N. Makarov, “On the fractal nature of light-emitting structures based on III–N nanomaterials and related phenomena”, Fizika i Tekhnika Poluprovodnikov, 50:9 (2016), 1195–1201 ; Semiconductors, 50:9 (2016), 1173–1179 |
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| 16. |
V. V. Emtsev, E. E. Zavarin, M. A. Kozlovskii, M. F. Kudoyarov, V. V. Lundin, G. A. Oganesyan, V. N. Petrov, D. S. Poloskin, A. V. Sakharov, S. I. Troshkov, N. M. Shmidt, V. N. V’yuginov, A. A. Zybin, Ya. M. Parnes, S. I. Vidyakin, A. G. Gudkov, A. E. Chernyakov, V. V. Kozlovsky, “Specific features of proton interaction with transistor structures having a 2D AlGaN/GaN channel”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:21 (2016), 39–46 ; Tech. Phys. Lett., 42:11 (2016), 1079–1082 |
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| 17. |
V. V. Emtsev, E. E. Zavarin, G. A. Oganesyan, V. N. Petrov, A. V. Sakharov, N. M. Shmidt, V. N. V’yuginov, A. A. Zybin, Ya. M. Parnes, S. I. Vidyakin, A. G. Gudkov, A. E. Chernyakov, “The relationship between the reliability of transistors with 2D AlGaN/GaN channel and organization type of nanomaterial”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:13 (2016), 80–86 ; Tech. Phys. Lett., 42:7 (2016), 701–703 |
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2014 |
| 18. |
D. A. Zakgeim, G. V. Itkinson, M. V. Kukushkin, L. K. Markov, O. V. Osipov, A. S. Pavluchenko, I. P. Smirnova, A. E. Chernyakov, D. A. Bauman, “High-power AlGaInN LED chips with two-level metallization”, Fizika i Tekhnika Poluprovodnikov, 48:9 (2014), 1287–1293 ; Semiconductors, 48:9 (2014), 1254–1259 |
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| 19. |
N. M. Shmidt, A. S. Usikov, E. I. Shabunina, A. E. Chernyakov, A. V. Sakharov, S. Yu. Kurin, A. A. Antipov, I. S. Barash, A. D. Roenkov, Yu. N. Makarov, H. Helava, “Study of the degradation of the external quantum efficiency of UV LEDs based on AlGaN/GaN heterostructures grown by chloride-hydride vapor-phase epitaxy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:13 (2014), 73–80 ; Tech. Phys. Lett., 40:7 (2014), 574–577 |
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2013 |
| 20. |
L. K. Markov, I. P. Smirnova, A. S. Pavluchenko, M. V. Kukushkin, E. D. Vasil'eva, A. E. Chernyakov, A. S. Usikov, “Comparison of the properties of AlGaInN light-emitting diode chips of vertical and flip-chip design using silicon as the a submount”, Fizika i Tekhnika Poluprovodnikov, 47:3 (2013), 386–391 ; Semiconductors, 47:3 (2013), 409–414 |
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2012 |
| 21. |
N. D. Il'inskaya, A. L. Zakhgeim, S. A. Karandashov, B. A. Matveev, V. I. Ratushnyi, M. A. Remennyi, A. Yu. Rybalchenko, N. M. Stus, A. E. Chernyakov, “Front surface illuminated InAsSb photodiodes (long-wavelength cutoff $\lambda_{0.1}$ = 4.5 $\mu$m) operating at temperatures of 25–80$^\circ$C”, Fizika i Tekhnika Poluprovodnikov, 46:5 (2012), 708–713 ; Semiconductors, 46:5 (2012), 690–695 |
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| 22. |
A. L. Zakhgeim, M. E. Levinshteĭn, V. P. Petrov, A. E. Chernyakov, E. I. Shabunina, N. M. Shmidt, “Low-frequency noise in as-fabricated and degraded blue InGaAs/GaN LEDs”, Fizika i Tekhnika Poluprovodnikov, 46:2 (2012), 219–223 ; Semiconductors, 46:2 (2012), 208–212 |
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